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Manufacturer:
Toshiba Semiconductor and StorageDescription:
TRANS NPN/PNP 50V 0.15A ES6
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Technical Documents
| TYPE | DESCRIPTION |
|---|---|
| Manufacturer | Toshiba Semiconductor and Storage |
| Package / Case | SOT-563, SOT-666 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN, PNP |
| Operating Temperature | 150°C (TJ) |
| Power - Max | 100mW |
| Current - Collector (Ic) (Max) | 150mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 2mA, 6V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | ES6 |
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HN1B04FE-GR,LF - From Manufacturer: Toshiba Electronic Devices and Storage Corporation, it is an TRANS NPN/PNP 50V 0.15A ES6, part of Discrete Semiconductor Products, Transistors, Bipolar (BJT), Bipolar Transistor Arrays. HN1B04FE-GR,LF stock status: In stock; order now! Ships immediately.
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