Toshiba Electronic Devices and Storage Corporation

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HN1A01FE-GR,LF

Manufacturer:

Toshiba Semiconductor and Storage

Description:

TRANS 2PNP 50V 0.15A ES6

Origin Data #:

9722431-HN1A01FE-GR,LF

Customer:

RoHS Status:

RoHS Compliant

ECAD Model:

PCB Symbol, Footprint & 3D Model


Certifications

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ERAIESDAS 9120BISO 9001ISO 13485ISO 14001ISO 22301ISO 28000ISO 37301

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Attributes

Technical Documents

TYPEDESCRIPTION
ManufacturerToshiba Semiconductor and Storage
Package / CaseSOT-563, SOT-666
Mounting TypeSurface Mount
Transistor Type2 PNP (Dual)
Operating Temperature150°C (TJ)
Power - Max100mW
Current - Collector (Ic) (Max)150mA
Voltage - Collector Emitter Breakdown (Max)50V
Vce Saturation (Max) @ Ib, Ic300mV @ 10mA, 100mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 2mA, 6V
Frequency - Transition80MHz
Supplier Device PackageES6

Datasheet

HN1A01FE-GR,LF Datasheet (PDF)

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HN1A01FE-GR,LF - From Manufacturer: Toshiba Electronic Devices and Storage Corporation, it is an TRANS 2PNP 50V 0.15A ES6, part of Discrete Semiconductor Products, Transistors, Bipolar (BJT), Bipolar Transistor Arrays. . HN1A01FE-GR,LF stock status: In stock; order now! Ships immediately.

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Toshiba Electronic Devices and Storage Corporation
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Quantity
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QTYUNIT PRICEEXT PRICE
1+$0.2535$0.2535
5+$0.2394$1.1970
10+$0.2254$2.2540
20+$0.2113$4.2260
30+$0.1972$5.9160
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