UnitedSiC introduces the UF4C/SC Generation 4 series, featuring SiC FETs with a range of RDS(on) options from 23 mΩ to 70 mΩ, all rated at 1200 V. These devices leverage a unique cascode configuration, delivering impressive figures of merit (FoM) such as RDS(on) x area of 1.35 mΩ cm2, RDS(on) x Eoss of 0.78 Ω µJ, RDS(on) x Coss(tr) of 4.5 Ω pF, and RDS(on) x QG of 0.9 Ω nC.
The UF4C/SC series serves as the optimal power solution for a wide array of applications including on-board EV chargers, industrial battery chargers, power suppliers, solar inverters, welding machines, UPS systems, and induction heating. This versatility stems from the devices' ability to efficiently handle mainstream 800 V bus architectures.
One of the standout features of these SiC FETs is their flexibility in design and cost-effectiveness. With multiple RDS(on) and package options available, designers can tailor their solutions to specific application requirements while optimizing cost. Additionally, these FETs can be safely driven with standard gate drive voltages of 0 V to 12 V or 15 V, ensuring compatibility with existing systems.
Furthermore, the UF4C/SC Generation 4 FETs maintain a good threshold noise margin with a true 5 V threshold voltage, ensuring reliable operation in various conditions. They are also compatible with typical drive voltages used for Si IGBTs, Si MOSFETs, and SiC MOSFETs, simplifying integration into existing designs. Additionally, these devices feature built-in ESD gate protection clamps, enhancing reliability and robustness in harsh environments.
In conclusion, UnitedSiC’s UF4C/SC Generation 4 SiC FETs offer unmatched performance, versatility, and cost-effectiveness for a wide range of power applications. With their innovative design, multiple options, and robust features, they empower designers to create efficient and reliable power solutions tailored to their specific needs.
1200 V VDS rating
Low RDS(on) from 23 mΩ to 70 mΩ
Safely driven with standard 0 V to 12 V or 15 V gate drive voltage
ESD protected, HBM class 2
Excellent threshold noise margin maintained with true 5 V threshold voltage
Operates with all Si IGBT, Si FET, and SiC FET drive voltages
Excellent reverse recovery
Excellent body diode performance (VF <2 V)
Low gate charge
Low intrinsic capacitance
TO-247-3L and TO-247-4L industry-standard packages
Excellent performance FoM
RDS(on) x area
RDS(on) x Eoss
RDS(on) x Coss(tr)
RDS(on) x QG
On-board charging
Industrial battery chargers
PFC in solar
Industrial power supplies
Welding machines
UPS
Induction heating
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