Sanken's innovative Schottky diodes, specifically the SPET-21015 and SPET-21515 models, incorporate trench structures that revolutionize high-speed switching applications. These trench structures play a crucial role in optimizing key diode characteristics, namely forward voltage drop (VF) and reverse leakage current (IR).
The trench structures in Sanken's Schottky diodes enable significant enhancements in both VF and IR characteristics. By reducing VF, these diodes minimize energy losses during switching operations, thereby boosting overall power supply efficiency. Moreover, the improved IR characteristics ensure minimal leakage currents, enhancing the reliability and performance of the diodes in high-speed applications.
The advantages offered by Sanken's Schottky diodes with trench structures extend beyond basic performance improvements. These diodes are tailored to meet the demands of modern high-frequency systems, where efficient power management is paramount. The enhanced VF and IR characteristics make these diodes ideal components for DC/DC converters and adapters, where rapid and precise switching operations are essential.
In conclusion, Sanken's Schottky diodes with trench structures represent a significant leap forward in high-speed switching technology. By leveraging these innovative diodes, engineers and designers can achieve superior power supply efficiency, reliable performance, and seamless integration in high-frequency systems.
Improve power supply efficiency
Enable high-frequency systems
Bare lead frame: Pb-free (RoHS compliant)
Flammability: Equivalent to UL94V-0
Applications
High-speed switching applications
Adapters
DC/DC converters
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