ROHM's RGWxx65C series stands out by incorporating SiC Schottky barrier diodes (SBD) as the freewheeling diode for the IGBT's feedback block. This innovative design minimizes recovery energy and diode switching loss, leading to a substantial reduction in IGBT turn-on loss compared to traditional silicon fast recovery diodes (FRDs). The synergistic effect of these features results in a remarkable 67% lower loss than conventional IGBTs, making it an ideal choice for automotive electrical control units and industrial equipment where efficiency is paramount.
Moreover, in the context of vehicle chargers, the RGWxx65C series outperforms super junction MOSFETs (SJ MOSFETs) by 24% in terms of lower loss. This superior performance not only enhances cost-effectiveness but also contributes to reduced power consumption in various industrial and automotive applications. By leveraging the advanced technology of SiC SBDs, ROHM has successfully optimized the efficiency and performance of power electronics, setting a new benchmark in the industry for enhanced energy savings and reliability.
Tell us what you're after