PIP Series, Mixed Technology

Mixed technology TVS refers to a specific category of TVS devices that employ a combination of different protection technologies. In mixed technology TVS devices, multiple protection mechanisms are integrated to provide enhanced performance and reliability. Typically, mixed technology TVS devices utilize a combination of MOV (Metal Oxide Varistor) and GDT (Gas Discharge Tube) technologies. The Metal Oxide Varistor is known for its ability to rapidly divert excess voltage away from the protected circuit, limiting the voltage surge to a safe level. On the other hand, the Gas Discharge Tube aids in achieving self-resetting and clamping behavior of the TVS device. This means that after the transient event has passed, the TVS device quickly returns to its normal operating state. By incorporating both MOV and GDT technologies, mixed technology TVS devices offer a balanced solution for circuit protection. They provide low leakage currents, ensuring efficient operation under normal conditions. Additionally, their self-resetting and clamping characteristics enable them to respond rapidly to transient voltage events, effectively safeguarding the circuit. Mixed technology TVS devices are widely used in various industries where reliable over-voltage protection is crucial. They find applications in telecommunications, automotive, industrial equipment, and consumer electronics. By effectively mitigating the impact of transient voltage events, these devices help protect sensitive electronic components and improve the overall reliability and longevity of electronic systems. In summary, mixed technology TVS devices combine different protection technologies, such as MOV and GDT, to provide robust protection against transient voltage events. They offer low leakage currents, self-resetting behavior, and rapid response to voltage surges or spikes. Incorporating mixed technology TVS devices into electronic designs ensures reliable operation and safeguards circuits and connected devices from potential damage caused by transient voltage disturbances.