IFN201 Series, JFETs

Results:
4
Manufacturer
Series
Voltage - Cutoff (VGS off) @ Id
Resistance - RDS(On)
Operating Temperature
FET Type
Input Capacitance (Ciss) (Max) @ Vds
Current Drain (Id) - Max
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
Mounting Type
Supplier Device Package
Drain to Source Voltage (Vdss)
Qualification
Package / Case
Power - Max
Voltage - Breakdown (V(BR)GSS)
Results remaining4
Applied Filters:
IFN201
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)Voltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsPower - MaxGradeVoltage - Breakdown (V(BR)GSS)Current Drain (Id) - MaxCurrent - Drain (Idss) @ Vds (Vgs=0)QualificationSeriesPackage / CaseResistance - RDS(On)
IFN201AST3TR
JFET N-Channel -40V Low Ciss
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-3
N-Channel
40 V
800 mV @ 10 nA
-
350 mW
-
-
-
-
-
IFN201
SOT-23-3
1.2 kOhms
IFN201ST3
JFET N-Channel -40V Low Ciss
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-3
N-Channel
40 V
1.1 V @ 10 nA
-
350 mW
-
-
-
-
-
IFN201
SOT-23-3
850 Ohms
IFN201AST3
JFET N-Channel -40V Low Ciss
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-3
N-Channel
40 V
800 mV @ 10 nA
-
350 mW
-
-
-
-
-
IFN201
SOT-23-3
1.2 kOhms
IFN201ST3TR
JFET N-Channel -40V Low Ciss
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-3
N-Channel
40 V
1.1 V @ 10 nA
-
350 mW
-
-
-
-
-
IFN201
SOT-23-3
850 Ohms

About  JFETs

Junction gate field-effect transistors (JFETs) are semiconductor devices widely utilized as electronically-controlled switches, amplifiers, or voltage-controlled resistors. These devices operate based on the principle of controlling current flow through a semiconducting channel between the source and drain terminals by varying the voltage applied to the gate terminal. When a potential difference of the appropriate polarity is applied between the gate and source terminals, it alters the resistance to current flow in the channel. This adjustment in resistance leads to a decrease in the amount of current flowing between the source and drain terminals. One notable characteristic of JFETs is that they do not require a biasing current for operation. Instead, they rely on the flow of charges through the semiconducting channel between the source and drain terminals to control the current flow. This allows for simplified circuit designs and eliminates the need for additional biasing components. JFETs find applications in various electronic circuits where precise control over current flow, amplification, or voltage-controlled resistance is required. Their unique characteristics and simplicity make them suitable for a wide range of applications in fields such as telecommunications, audio amplification, and instrumentation.