LS5912C Series, JFETs

Results:
4
Manufacturer
Series
Supplier Device Package
Package / Case
Mounting Type
Operating Temperature
Input Capacitance (Ciss) (Max) @ Vds
FET Type
Voltage - Cutoff (VGS off) @ Id
Current Drain (Id) - Max
Current - Drain (Idss) @ Vds (Vgs=0)
Grade
Resistance - RDS(On)
Drain to Source Voltage (Vdss)
Qualification
Power - Max
Voltage - Breakdown (V(BR)GSS)
Results remaining4
Applied Filters:
LS5912C
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackagePower - MaxSeriesFET TypeVoltage - Breakdown (V(BR)GSS)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsGradeDrain to Source Voltage (Vdss)Current Drain (Id) - MaxResistance - RDS(On)Qualification
LS5912C SOT-23 6L ROHS
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
SOT-23-6
SOT-23-6
500 mW
LS5912C
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
-
-
-
-
-
LS5912C TO-71 6L ROHS
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-71-6 Metal Can
TO-71
500 mW
LS5912C
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
-
-
-
-
-
LS5912C TO-78 6L ROHS
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-78-6 Metal Can
TO-78-6
500 mW
LS5912C
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
-
-
-
-
-
LS5912C SOIC 8L
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-SOIC (0.154", 3.90mm Width)
8-SOIC
500 mW
LS5912C
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
-
-
-
-
-

About  JFETs

Junction gate field-effect transistors (JFETs) are semiconductor devices widely utilized as electronically-controlled switches, amplifiers, or voltage-controlled resistors. These devices operate based on the principle of controlling current flow through a semiconducting channel between the source and drain terminals by varying the voltage applied to the gate terminal. When a potential difference of the appropriate polarity is applied between the gate and source terminals, it alters the resistance to current flow in the channel. This adjustment in resistance leads to a decrease in the amount of current flowing between the source and drain terminals. One notable characteristic of JFETs is that they do not require a biasing current for operation. Instead, they rely on the flow of charges through the semiconducting channel between the source and drain terminals to control the current flow. This allows for simplified circuit designs and eliminates the need for additional biasing components. JFETs find applications in various electronic circuits where precise control over current flow, amplification, or voltage-controlled resistance is required. Their unique characteristics and simplicity make them suitable for a wide range of applications in fields such as telecommunications, audio amplification, and instrumentation.