LS5911 Series, JFETs

Results:
5
Manufacturer
Series
Supplier Device Package
Package / Case
Voltage - Cutoff (VGS off) @ Id
Current Drain (Id) - Max
Mounting Type
Drain to Source Voltage (Vdss)
Operating Temperature
Input Capacitance (Ciss) (Max) @ Vds
FET Type
Current - Drain (Idss) @ Vds (Vgs=0)
Grade
Resistance - RDS(On)
Qualification
Power - Max
Voltage - Breakdown (V(BR)GSS)
Results remaining5
Applied Filters:
LS5911
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePower - MaxSeriesFET TypeVoltage - Breakdown (V(BR)GSS)Current - Drain (Idss) @ Vds (Vgs=0)Voltage - Cutoff (VGS off) @ IdInput Capacitance (Ciss) (Max) @ VdsPackage / CaseSupplier Device PackageGradeDrain to Source Voltage (Vdss)Current Drain (Id) - MaxResistance - RDS(On)Qualification
LS5911 TO-71 6L ROHS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
500 mW
LS5911
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
TO-71-6 Metal Can
TO-71
-
-
-
-
-
LS5911 SOIC 8L-B
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
500 mW
LS5911
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
-
-
-
-
LS5911 SOT-23 6L ROHS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
500 mW
LS5911
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 mA
5pF @ 10V
SOT-23-6
SOT-23-6
-
25 V
50 mA
-
-
LS5911 TO-78 6L ROHS
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
500 mW
LS5911
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
TO-78-6 Metal Can
TO-78-6
-
-
-
-
-
LS5911 SOIC 8L-A
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
500 mW
LS5911
2 N-Channel (Dual)
25 V
7 mA @ 10 V
1 V @ 1 nA
5pF @ 10V
8-SOIC (0.154", 3.90mm Width)
8-SOIC
-
-
-
-
-

About  JFETs

Junction gate field-effect transistors (JFETs) are semiconductor devices widely utilized as electronically-controlled switches, amplifiers, or voltage-controlled resistors. These devices operate based on the principle of controlling current flow through a semiconducting channel between the source and drain terminals by varying the voltage applied to the gate terminal. When a potential difference of the appropriate polarity is applied between the gate and source terminals, it alters the resistance to current flow in the channel. This adjustment in resistance leads to a decrease in the amount of current flowing between the source and drain terminals. One notable characteristic of JFETs is that they do not require a biasing current for operation. Instead, they rely on the flow of charges through the semiconducting channel between the source and drain terminals to control the current flow. This allows for simplified circuit designs and eliminates the need for additional biasing components. JFETs find applications in various electronic circuits where precise control over current flow, amplification, or voltage-controlled resistance is required. Their unique characteristics and simplicity make them suitable for a wide range of applications in fields such as telecommunications, audio amplification, and instrumentation.