Trenchstop™ 5 Series, Single IGBTs

Results:
61
Manufacturer
Series
Switching Energy
Td (on/off) @ 25°C
Test Condition
Vce(on) (Max) @ Vge, Ic
Reverse Recovery Time (trr)
Current - Collector (Ic) (Max)
Power - Max
Gate Charge
Current - Collector Pulsed (Icm)
Supplier Device Package
Package / Case
IGBT Type
Operating Temperature
Grade
Mounting Type
Qualification
Input Type
Voltage - Collector Emitter Breakdown (Max)
Results remaining61
Applied Filters:
Trenchstop™ 5
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageGradeCurrent - Collector (Ic) (Max)Voltage - Collector Emitter Breakdown (Max)SeriesIGBT TypeCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
IKW50N65SS5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3
-
80 A
650 V
Trenchstop™ 5
Trench Field Stop
200 A
1.7V @ 15V, 50A
274 W
320µJ (on), 550µJ (off)
Standard
110 nC
20ns/140ns
400V, 50A, 9Ohm, 15V
-
-
IKW75N65SS5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3
-
80 A
650 V
Trenchstop™ 5
Trench Field Stop
300 A
1.7V @ 15V, 75A
395 W
450µJ (on), 750µJ (off)
Standard
164 nC
22ns/145ns
400V, 75A, 5.6Ohm, 15V
-
-
IKFW50N65EH5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-HSIP247-3-2
-
59 A
650 V
Trenchstop™ 5
Trench Field Stop
160 A
2.1V @ 15V, 40A
124 W
1.2mJ (on), 400µJ (off)
Standard
95 nC
20ns/138ns
400V, 40A, 15.1Ohm, 15V
52 ns
-
AIGB15N65H5ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
Automotive
30 A
650 V
Trenchstop™ 5
NPT
45 A
2.1V @ 15V, 15A
105 W
0.16mJ (on), 0.04mJ (off)
Standard
40 nC
24ns/22ns
400V, 7.5A, 39Ohm, 15V
-
AEC-Q101
IHFW40N65R5SXKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-HSIP247-3-2
-
61 A
650 V
Trenchstop™ 5
Trench Field Stop
120 A
2V @ 15V, 40A
108 W
1.52mJ (on), 700µJ (off)
Standard
142 nC
44ns/363ns
400V, 40A, 23.1Ohm, 15V
103 ns
-
IKFW50N65ES5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-HSIP247-3-2
-
74 A
650 V
Trenchstop™ 5
Trench Field Stop
160 A
1.7V @ 15V, 40A
127 W
860µJ (on), 400µJ (off)
Standard
95 nC
19ns/130ns
400V, 40A, 10Ohm, 15V
69 ns
-
IKFW60N65ES5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-HSIP247-3-2
-
77 A
650 V
Trenchstop™ 5
Trench Field Stop
200 A
1.7V @ 15V, 50A
138 W
1.23mJ (on), 550µJ (off)
Standard
120 nC
20ns/127ns
400V, 50A, 8.2Ohm, 15V
77 ns
-
IKWH30N65WR6XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3-32
-
67 A
650 V
Trenchstop™ 5
Trench Field Stop
90 A
1.75V @ 15V, 30A
136 W
-
Standard
97 nC
-
-
-
-
IKW40N65RH5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3
-
74 A
650 V
Trenchstop™ 5
Trench Field Stop
160 A
2.1V @ 15V, 40A
250 W
160µJ (on), 120µJ (off)
Standard
95 nC
18ns/165ns
400V, 20A, 15Ohm, 15V
-
-
IKZA50N65RH5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-4
PG-TO247-4-3
-
80 A
650 V
Trenchstop™ 5
Trench Field Stop
200 A
2.1V @ 15V, 50A
305 W
200µJ (on), 180µJ (off)
Standard
120 nC
21ns/180ns
400V, 25A, 12Ohm, 15V
-
-
AIKW50N65RF5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3
Automotive
80 A
650 V
Trenchstop™ 5
Trench Field Stop
150 A
2.1V @ 15V, 50A
250 W
310µJ (on), 120µJ (off)
Standard
109 nC
20ns/156ns
400V, 25A, 12Ohm, 15V
-
AEC-Q101
IKFW40N65ES5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-HSIP247-3-2
-
60 A
650 V
Trenchstop™ 5
Trench Field Stop
120 A
1.7V @ 15V, 30A
106 W
560µJ (on), 320µJ (off)
Standard
70 nC
17ns/124ns
400V, 30A, 13Ohm, 15V
75 ns
-
IKWH20N65WR6XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3-32
-
55 A
650 V
Trenchstop™ 5
Trench Field Stop
60 A
1.7V @ 15V, 20A
136 W
-
Standard
97 nC
-
-
-
-
IGB15N65S5ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-
35 A
650 V
Trenchstop™ 5
Trench Field Stop
60 A
1.7V @ 15V, 15A
105 W
250µJ (on), 140µJ (off)
Standard
38 nC
12ns/117ns
400V, 15A, 25Ohm, 15V
-
-
IGB20N65S5ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3-2
-
40 A
650 V
Trenchstop™ 5
Trench Field Stop
80 A
1.7V @ 15V, 20A
125 W
360µJ (on), 150µJ (off)
Standard
48 nC
13ns/115ns
400V, 20A, 20Ohm, 15V
-
-
IKW75N65EL5XKSA1
IGBT 650V 75A FAST DIODE TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3
-
80 A
650 V
Trenchstop™ 5
-
300 A
1.35V @ 15V, 75A
536 W
1.61mJ (on), 3.2mJ (off)
Standard
436 nC
40ns/275ns
400V, 75A, 4Ohm, 15V
114 ns
-
AIKW50N65DF5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-40°C ~ 175°C (TJ)
TO-247-3
PG-TO247-3-41
Automotive
-
650 V
Trenchstop™ 5
Trench
150 A
2.1V @ 15V, 50A
270 W
490µJ (on), 140µJ (off)
Standard
1018 nC
21ns/156ns
400V, 25A, 12Ohm, 15V
-
AEC-Q101
IKB40N65EH5ATMA1
40A 650V TRENCHSTOP5 FAST H5 IGB
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-
74 A
650 V
Trenchstop™ 5
Trench Field Stop
160 A
2.1V @ 15V, 40A
250 W
1.1mJ (on), 400µJ (off)
Standard
95 nC
20ns/157ns
400V, 40A, 15Ohm, 15V
78 ns
-
IKB40N65ES5ATMA1
40A 650V TRENCHSTOP5 MEDIUM SPEE
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-
79 A
650 V
Trenchstop™ 5
Trench Field Stop
160 A
1.74V @ 15V, 40A
230 W
860µJ (on), 400µJ (off)
Standard
95 nC
19ns/130ns
400V, 40A, 10Ohm, 15V
73 ns
-
IKB40N65EF5ATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-40°C ~ 175°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PG-TO263-3
-
74 A
650 V
Trenchstop™ 5
Trench Field Stop
160 A
2.1V @ 15V, 40A
250 W
420µJ (on), 100µJ (off)
Standard
95 nC
22ns/160ns
400V, 40A, 15Ohm, 15V
83 ns
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.