GenX3™, XPT™ Series, Single IGBTs

Results:
97
Manufacturer
Series
Current - Collector (Ic) (Max)
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Power - Max
Test Condition
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
Input Type
IGBT Type
Grade
Qualification
Results remaining97
Applied Filters:
GenX3™, XPT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseIGBT TypeOperating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)Supplier Device PackageSeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
IXYN120N65C3D1
IGBT MOD DISC XPT-GENX3 SOT227UI
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
SOT-227-4, miniBLOC
PT
-55°C ~ 175°C (TJ)
-
650 V
SOT-227B
GenX3™, XPT™
190 A
620 A
2.8V @ 15V, 100A
830 W
1.25mJ (on), 500µJ (off)
Standard
265 nC
28ns/127ns
400V, 50A, 2Ohm, 15V
29 ns
-
IXYN120N65B3D1
IGBT MODULE DISC IGBT SOT-227UI
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Quantity
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PCB Symbol, Footprint & 3D Model
Chassis Mount
SOT-227-4, miniBLOC
PT
-55°C ~ 175°C (TJ)
-
650 V
SOT-227B
GenX3™, XPT™
250 A
770 A
1.9V @ 15V, 100A
830 W
1.34mJ (on), 1.5mJ (off)
Standard
250 nC
30ns/168ns
400V, 50A, 2Ohm, 15V
28 ns
-
IXYH40N65C3
IGBT 650V 80A 300W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
TO-247 (IXTH)
GenX3™, XPT™
80 A
180 A
2.2V @ 15V, 40A
300 W
860µJ (on), 400µJ (off)
Standard
70 nC
26ns/106ns
400V, 30A, 10Ohm, 15V
-
-
IXYH75N65C3H1
IGBT 650V 170A 750W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
TO-247 (IXTH)
GenX3™, XPT™
170 A
360 A
2.3V @ 15V, 60A
750 W
2.8mJ (on), 1mJ (off)
Standard
123 nC
27ns/93ns
400V, 60A, 3Ohm, 15V
150 ns
-
IXYR100N120C3
IGBT 1200V 104A 484W ISOPLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
-55°C ~ 175°C (TJ)
-
1200 V
ISOPLUS247™
GenX3™, XPT™
104 A
480 A
3.5V @ 15V, 100A
484 W
6.5mJ (on), 2.9mJ (off)
Standard
270 nC
32ns/123ns
600V, 100A, 1Ohm, 15V
-
-
MMIX1X200N60B3H1
IGBT 600V 175A 520W SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
24-PowerSMD, 21 Leads
-
-55°C ~ 150°C (TJ)
-
600 V
24-SMPD
GenX3™, XPT™
175 A
1000 A
1.7V @ 15V, 100A
520 W
2.85mJ (on), 2.9mJ (off)
Standard
315 nC
48ns/160ns
360V, 100A, 1Ohm, 15V
100 ns
-
IXYH24N90C3D1
IGBT 900V 44A 200W C3 TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
-55°C ~ 150°C (TJ)
-
900 V
TO-247 (IXTH)
GenX3™, XPT™
44 A
105 A
2.7V @ 15V, 24A
200 W
1.35mJ (on), 400µJ (off)
Standard
40 nC
20ns/73ns
450V, 24A, 10Ohm, 15V
340 ns
-
IXYX100N120B3
IGBT 1200V 188A 1150W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3 Variant
PT
-55°C ~ 175°C (TJ)
-
1200 V
PLUS247™-3
GenX3™, XPT™
225 A
530 A
2.6V @ 15V, 100A
1150 W
7.7mJ (on), 7.1mJ (off)
Standard
250 nC
30ns/153ns
600V, 100A, 1Ohm, 15V
-
-
IXYH20N120C3D1
IGBT 1200V 36A 230W TO-247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
-55°C ~ 150°C (TJ)
-
1200 V
TO-247 (IXTH)
GenX3™, XPT™
36 A
88 A
3.4V @ 15V, 20A
230 W
1.3mJ (on), 500µJ (off)
Standard
53 nC
20ns/90ns
600V, 20A, 10Ohm, 15V
195 ns
-
IXXK100N60C3H1
IGBT 600V 170A 695W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
PT
-55°C ~ 150°C (TJ)
-
600 V
TO-264 (IXXK)
GenX3™, XPT™
170 A
340 A
2.2V @ 15V, 70A
695 W
2mJ (on), 950µJ (off)
Standard
150 nC
30ns/90ns
360V, 70A, 2Ohm, 15V
140 ns
-
IXXK100N60B3H1
IGBT 600V 200A 695W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
PT
-55°C ~ 150°C (TJ)
-
600 V
TO-264 (IXXK)
GenX3™, XPT™
200 A
440 A
1.8V @ 15V, 70A
695 W
1.9mJ (on), 2mJ (off)
Standard
143 nC
30ns/120ns
360V, 70A, 2Ohm, 15V
140 ns
-
IXYX120N120C3
IGBT 1200V 240A 1500W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3 Variant
-
-55°C ~ 175°C (TJ)
-
1200 V
PLUS247™-3
GenX3™, XPT™
240 A
700 A
3.2V @ 15V, 120A
1500 W
6.75mJ (on), 5.1mJ (off)
Standard
412 nC
35ns/176ns
600V, 100A, 1Ohm, 15V
-
-
IXYH40N90C3D1
IGBT 900V 90A 500W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
-55°C ~ 150°C (TJ)
-
900 V
TO-247 (IXTH)
GenX3™, XPT™
90 A
180 A
2.5V @ 15V, 40A
500 W
1.9mJ (on), 1mJ (off)
Standard
74 nC
27ns/78ns
450V, 40A, 5Ohm, 15V
100 ns
-
IXYY8N90C3
IGBT 900V 20A 125W C3 TO-252
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
-
-55°C ~ 175°C (TJ)
-
900 V
TO-252AA
GenX3™, XPT™
20 A
48 A
2.5V @ 15V, 8A
125 W
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
-
-
IXYH50N65C3H1
IGBT 650V 130A 600W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
650 V
TO-247 (IXTH)
GenX3™, XPT™
130 A
250 A
2.1V @ 15V, 36A
600 W
1.3mJ (on), 370µJ (off)
Standard
80 nC
22ns/80ns
400V, 36A, 5Ohm, 15V
120 ns
-
IXXH100N60C3
IGBT 600V 190A 830W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
-55°C ~ 175°C (TJ)
-
600 V
TO-247AD (IXXH)
GenX3™, XPT™
190 A
380 A
2.2V @ 15V, 70A
830 W
2mJ (on), 950µJ (off)
Standard
150 nC
30ns/90ns
360V, 70A, 2Ohm, 15V
-
-
IXYP30N65B3D1
IGBT 650V 30A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
-
-
-
TO-220AB
GenX3™, XPT™
-
-
-
-
-
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-
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About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.