GenX3™, XPT™ Series, Single IGBTs

Results:
97
Manufacturer
Series
Current - Collector (Ic) (Max)
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Power - Max
Test Condition
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
Input Type
IGBT Type
Grade
Qualification
Results remaining97
Applied Filters:
GenX3™, XPT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageIGBT TypeVoltage - Collector Emitter Breakdown (Max)GradeSeriesCurrent - Collector (Ic) (Max)Current - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcPower - MaxSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
IXYH30N120C3D1
IGBT 1200V 66A 416W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247 (IXTH)
-
1200 V
-
GenX3™, XPT™
66 A
133 A
3.3V @ 15V, 30A
416 W
2.6mJ (on), 1.1mJ (off)
Standard
69 nC
19ns/130ns
600V, 30A, 10Ohm, 15V
195 ns
-
IXYH60N90C3
IGBT 900V 140A 750W C3 TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
TO-247 (IXTH)
-
900 V
-
GenX3™, XPT™
140 A
310 A
2.7V @ 15V, 60A
750 W
2.7mJ (on), 1.55mJ (off)
Standard
107 nC
30ns/87ns
450V, 60A, 3Ohm, 15V
-
-
IXYH100N65C3
IGBT 650V 200A 830W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
TO-247 (IXTH)
PT
650 V
-
GenX3™, XPT™
200 A
420 A
2.3V @ 15V, 70A
830 W
2.15mJ (on), 840µJ (off)
Standard
164 nC
28ns/106ns
400V, 50A, 3Ohm, 15V
-
-
IXYH30N120C3
IGBT 1200V 75A 500W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
TO-247 (IXYH)
-
1200 V
-
GenX3™, XPT™
75 A
145 A
3.3V @ 15V, 30A
500 W
2.6mJ (on), 1.1mJ (off)
Standard
69 nC
19ns/130ns
600V, 30A, 10Ohm, 15V
-
-
IXGT72N60A3
IGBT 600V 75A 540W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
600 V
-
GenX3™, XPT™
75 A
400 A
1.35V @ 15V, 60A
540 W
1.38mJ (on), 3.5mJ (off)
Standard
230 nC
31ns/320ns
480V, 50A, 3Ohm, 15V
-
-
IXXH150N60C3
IGBT 600V TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-2
TO-247AD
PT
600 V
-
GenX3™, XPT™
300 A
150 A
2.5V @ 15V, 150A
1360 W
3.4mJ (on), 1.8mJ (off)
Standard
200 nC
34ns/120ns
400V, 75A, 2Ohm, 15V
-
-
IXXH75N60C3D1
IGBT 600V 150A 750W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-2
TO-247AD
PT
600 V
-
GenX3™, XPT™
150 A
300 A
2.3V @ 15V, 60A
750 W
1.6mJ (on), 800µJ (off)
Standard
107 nC
35ns/90ns
400V, 60A, 5Ohm, 15V
25 ns
-
IXYX100N120C3
IGBT 1200V 188A 1150W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3 Variant
PLUS247™-3
-
1200 V
-
GenX3™, XPT™
188 A
490 A
3.5V @ 15V, 100A
1150 W
6.5mJ (on), 2.9mJ (off)
Standard
270 nC
32ns/123ns
600V, 100A, 1Ohm, 15V
-
-
IXYJ20N120C3D1
IGBT 1200V 21A 105W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
ISO247
-
1200 V
-
GenX3™, XPT™
21 A
84 A
3.4V @ 15V, 20A
105 W
1.3mJ (on), 500µJ (off)
Standard
53 nC
20ns/90ns
600V, 20A, 10Ohm, 15V
195 ns
-
IXXR100N60B3H1
IGBT 600V 145A 400W ISOPLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3
ISOPLUS247™
PT
600 V
-
GenX3™, XPT™
145 A
440 A
1.8V @ 15V, 70A
400 W
1.9mJ (on), 2mJ (off)
Standard
143 nC
30ns/120ns
360V, 70A, 2Ohm, 15V
140 ns
-
IXXX100N60C3H1
IGBT 600V 170A 695W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-247-3 Variant
PLUS247™-3
PT
600 V
-
GenX3™, XPT™
170 A
340 A
2.2V @ 15V, 70A
695 W
2mJ (on), 950µJ (off)
Standard
150 nC
30ns/90ns
360V, 70A, 2Ohm, 15V
140 ns
-
IXXK200N60B3
IGBT 600V 380A 1630W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-264-3, TO-264AA
TO-264 (IXXK)
PT
600 V
-
GenX3™, XPT™
380 A
900 A
1.7V @ 15V, 100A
1630 W
2.85mJ (on), 2.9mJ (off)
Standard
315 nC
48ns/160ns
360V, 100A, 1Ohm, 15V
-
-
IXXK200N60C3
IGBT 600V 340A 1630W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-264-3, TO-264AA
TO-264 (IXXK)
PT
600 V
-
GenX3™, XPT™
340 A
900 A
2.1V @ 15V, 100A
1630 W
3mJ (on), 1.7mJ (off)
Standard
315 nC
47ns/125ns
360V, 100A, 1Ohm, 15V
-
-
IXYK100N120C3
IGBT 1200V 188A 1150W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-264-3, TO-264AA
TO-264 (IXYK)
-
1200 V
-
GenX3™, XPT™
188 A
490 A
3.5V @ 15V, 100A
1150 W
6.5mJ (on), 2.9mJ (off)
Standard
270 nC
32ns/123ns
600V, 100A, 1Ohm, 15V
-
-
MMIX1X100N60B3H1
IGBT 600V 145A 400W SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
24-PowerSMD, 21 Leads
24-SMPD
-
600 V
-
GenX3™, XPT™
145 A
440 A
1.8V @ 15V, 70A
400 W
1.9mJ (on), 2mJ (off)
Standard
143 nC
30ns/120ns
360V, 70A, 2Ohm, 15V
140 ns
-
IXXX100N60B3H1
IGBT 600V 200A 695W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3 Variant
PLUS247™-3
PT
600 V
-
GenX3™, XPT™
200 A
440 A
1.8V @ 15V, 70A
695 W
1.9mJ (on), 2mJ (off)
Standard
143 nC
30ns/120ns
360V, 70A, 2Ohm, 15V
140 ns
-
IXYX100N65B3D1
IGBT 650V 188A 1150W PLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3 Variant
PLUS247™-3
PT
650 V
-
GenX3™, XPT™
225 A
460 A
1.85V @ 15V, 70A
830 W
1.27mJ (on), 1.37mJ (off)
Standard
168 nC
29ns/150ns
400V, 50A, 3Ohm, 15V
156 ns
-
IXXX300N60C3
IGBT 600V 510A 2300W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3 Variant
PLUS247™-3
PT
600 V
-
GenX3™, XPT™
510 A
1075 A
2V @ 15V, 100A
2300 W
3.35mJ (on), 1.9mJ (off)
Standard
438 nC
50ns/160ns
400V, 100A, 1Ohm, 15V
-
-
IXXK300N60C3
IGBT 600V 510A 2300W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-264-3, TO-264AA
TO-264 (IXXK)
PT
600 V
-
GenX3™, XPT™
510 A
1075 A
2V @ 15V, 100A
2300 W
3.35mJ (on), 1.9mJ (off)
Standard
438 nC
50ns/160ns
400V, 100A, 1Ohm, 15V
-
-
MMIX1X200N60B3
IGBT 600V 223A 625W SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
24-PowerSMD, 21 Leads
24-SMPD
PT
600 V
-
GenX3™, XPT™
223 A
1000 A
1.7V @ 15V, 100A
625 W
2.85mJ (on), 2.9mJ (off)
Standard
315 nC
48ns/160ns
360V, 100A, 1Ohm, 15V
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.