GenX3™, XPT™ Series, Single IGBTs

Results:
97
Manufacturer
Series
Current - Collector (Ic) (Max)
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Power - Max
Test Condition
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
Input Type
IGBT Type
Grade
Qualification
Results remaining97
Applied Filters:
GenX3™, XPT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageIGBT TypeCurrent - Collector (Ic) (Max)Operating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)Power - MaxSeriesCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionReverse Recovery Time (trr)Qualification
IXYP10N65C3
IGBT 650V 30A 160W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
PT
30 A
-55°C ~ 175°C (TJ)
-
650 V
160 W
GenX3™, XPT™
54 A
2.5V @ 15V, 10A
240µJ (on), 110µJ (off)
Standard
18 nC
20ns/77ns
400V, 10A, 50Ohm, 15V
-
-
IXXK300N60B3
IGBT 600V 550A 2300W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
TO-264 (IXXK)
PT
550 A
-55°C ~ 175°C (TJ)
-
600 V
2300 W
GenX3™, XPT™
1140 A
1.6V @ 15V, 100A
3.45mJ (on), 2.86mJ (off)
Standard
460 nC
50ns/190ns
400V, 100A, 1Ohm, 15V
-
-
IXYH82N120C3
IGBT 1200V 200A 1250W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXYH)
-
200 A
-55°C ~ 175°C (TJ)
-
1200 V
1250 W
GenX3™, XPT™
380 A
3.2V @ 15V, 82A
4.95mJ (on), 2.78mJ (off)
Standard
215 nC
29ns/192ns
600V, 80A, 2Ohm, 15V
-
-
IXYK140N90C3
IGBT 900V 310A 1630W TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-264-3, TO-264AA
TO-264 (IXYK)
-
310 A
-55°C ~ 175°C (TJ)
-
900 V
1630 W
GenX3™, XPT™
840 A
2.7V @ 15V, 140A
4.3mJ (on), 4mJ (off)
Standard
330 nC
40ns/145ns
450V, 100A, 1Ohm, 15V
-
-
IXXH30N60B3
IGBT 600V TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247AD (IXXH)
PT
60 A
-55°C ~ 175°C (TJ)
-
600 V
270 W
GenX3™, XPT™
115 A
1.85V @ 15V, 24A
550µJ (on), 500µJ (off)
Standard
39 nC
23ns/97ns
400V, 24A, 10Ohm, 15V
-
-
IXYH40N65C3D1
IGBT 650V 80A 300W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXTH)
PT
80 A
-55°C ~ 175°C (TJ)
-
650 V
300 W
GenX3™, XPT™
180 A
2.35V @ 15V, 40A
830µJ (on), 360µJ (off)
Standard
66 nC
23ns/110ns
400V, 30A, 10Ohm, 15V
120 ns
-
IXYH24N90C3
IGBT 900V 46A 240W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXTH)
-
46 A
-55°C ~ 175°C (TJ)
-
900 V
240 W
GenX3™, XPT™
110 A
2.7V @ 15V, 24A
1.35mJ (on), 400µJ (off)
Standard
40 nC
20ns/73ns
450V, 24A, 10Ohm, 15V
-
-
IXYQ30N65B3D1
DISC IGBT XPT-GENX3 TO-3P (3)
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-3P-3, SC-65-3
TO-3P
PT
70 A
-55°C ~ 175°C (TJ)
-
650 V
270 W
GenX3™, XPT™
160 A
2.1V @ 15V, 30A
830µJ (on), 640µJ (off)
Standard
45 nC
17ns/87ns
400V, 30A, 10Ohm, 15V
38 ns
-
IXYH30N65C3H1
IGBT 650V 60A 270W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXTH)
PT
60 A
-55°C ~ 175°C (TJ)
-
650 V
270 W
GenX3™, XPT™
118 A
2.7V @ 15V, 30A
1mJ (on), 270µJ (off)
Standard
44 nC
21ns/75ns
400V, 30A, 10Ohm, 15V
120 ns
-
IXYQ40N65B3D1
DISC IGBT XPT-GENX3 TO-3P (3)
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-3P-3, SC-65-3
TO-3P
PT
86 A
-55°C ~ 175°C (TJ)
-
650 V
300 W
GenX3™, XPT™
195 A
2V @ 15V, 40A
800µJ (on), 700µJ (off)
Standard
68 nC
20ns/140ns
400V, 30A, 10Ohm, 15V
37 ns
-
IXXH50N60C3
IGBT 600V 100A 600W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247AD (IXXH)
PT
100 A
-55°C ~ 175°C (TJ)
-
600 V
600 W
GenX3™, XPT™
200 A
2.3V @ 15V, 36A
720µJ (on), 330µJ (off)
Standard
64 nC
24ns/62ns
360V, 36A, 5Ohm, 15V
-
-
IXYH75N65C3
IGBT 650V 170A 750W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXTH)
PT
170 A
-55°C ~ 175°C (TJ)
-
650 V
750 W
GenX3™, XPT™
360 A
2.3V @ 15V, 60A
2.8mJ (on), 1mJ (off)
Standard
123 nC
27ns/93ns
400V, 60A, 3Ohm, 15V
-
-
IXYH40N65C3H1
IGBT 650V 80A 300W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXYH)
PT
80 A
-
-
650 V
300 W
GenX3™, XPT™
180 A
2.2V @ 15V, 40A
860µJ (on), 400µJ (off)
Standard
70 nC
26ns/106ns
400V, 30A, 10Ohm, 15V
120 ns
-
IXXH50N60B3
IGBT 600V 120A 600W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247AD (IXXH)
PT
120 A
-
-
600 V
600 W
GenX3™, XPT™
200 A
1.8V @ 15V, 36A
670µJ (on), 740µJ (off)
Standard
70 nC
27ns/100ns
360V, 36A, 5Ohm, 15V
-
-
IXXH75N60C3
IGBT 600V 150A 750W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247AD (IXXH)
PT
150 A
-
-
600 V
750 W
GenX3™, XPT™
300 A
2.3V @ 15V, 60A
1.6mJ (on), 800µJ (off)
Standard
107 nC
35ns/90ns
400V, 60A, 5Ohm, 15V
-
-
IXYH40N120B3
IGBT 1200V 96A 577W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXTH)
-
96 A
-55°C ~ 175°C (TJ)
-
1200 V
577 W
GenX3™, XPT™
200 A
2.9V @ 15V, 40A
2.7mJ (on), 1.6mJ (off)
Standard
87 nC
22ns/177ns
600V, 40A, 10Ohm, 15V
-
-
IXYR50N120C3D1
IGBT 1200V 56A 290W ISOPLUS247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
ISOPLUS247™
-
56 A
-55°C ~ 150°C (TJ)
-
1200 V
290 W
GenX3™, XPT™
210 A
4V @ 15V, 50A
3mJ (on), 1mJ (off)
Standard
142 nC
28ns/133ns
600V, 50A, 5Ohm, 15V
195 ns
-
IXYP20N65C3D1
IGBT 650V 18A 50W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
PT
50 A
-55°C ~ 175°C (TJ)
-
650 V
200 W
GenX3™, XPT™
105 A
2.5V @ 15V, 20A
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
135 ns
-
IXYT30N65C3H1HV
IGBT 650V 60A 270W TO268HV
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
PT
60 A
-55°C ~ 175°C (TJ)
-
650 V
270 W
GenX3™, XPT™
118 A
2.7V @ 15V, 30A
1mJ (on), 270µJ (off)
Standard
44 nC
21ns/75ns
400V, 30A, 10Ohm, 15V
120 ns
-
IXYT80N90C3
IGBT 900V 165A 830W TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
-
165 A
-55°C ~ 175°C (TJ)
-
900 V
830 W
GenX3™, XPT™
360 A
2.7V @ 15V, 80A
4.3mJ (on), 1.9mJ (off)
Standard
145 nC
34ns/90ns
450V, 80A, 2Ohm, 15V
-
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.