GenX3™, XPT™ Series, Single IGBTs

Results:
97
Manufacturer
Series
Current - Collector (Ic) (Max)
Switching Energy
Td (on/off) @ 25°C
Vce(on) (Max) @ Vge, Ic
Current - Collector Pulsed (Icm)
Gate Charge
Power - Max
Test Condition
Reverse Recovery Time (trr)
Supplier Device Package
Package / Case
Voltage - Collector Emitter Breakdown (Max)
Operating Temperature
Mounting Type
Input Type
IGBT Type
Grade
Qualification
Results remaining97
Applied Filters:
GenX3™, XPT™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseIGBT TypeCurrent - Collector (Ic) (Max)Power - MaxOperating TemperatureGradeVoltage - Collector Emitter Breakdown (Max)Reverse Recovery Time (trr)Supplier Device PackageSeriesCurrent - Collector Pulsed (Icm)Vce(on) (Max) @ Vge, IcSwitching EnergyInput TypeGate ChargeTd (on/off) @ 25°CTest ConditionQualification
IXYA15N65C3D1
DISC IGBT XPT-GENX3 TO-263D2
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
38 A
200 W
-55°C ~ 175°C (TJ)
-
650 V
20 ns
TO-263AA
GenX3™, XPT™
80 A
2.5V @ 15V, 15A
270µJ (on), 230µJ (off)
Standard
19 nC
15ns/68ns
400V, 15A, 20Ohm, 15V
-
IXYP15N65C3D1
IGBT 650V 38A 200W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
38 A
200 W
-55°C ~ 175°C (TJ)
-
650 V
110 ns
TO-220-3
GenX3™, XPT™
80 A
2.5V @ 15V, 15A
270µJ (on), 230µJ (off)
Standard
19 nC
15ns/68ns
400V, 15A, 20Ohm, 15V
-
IXYA20N65C3-TRL
IXYA20N65C3 TRL
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
50 A
230 W
-55°C ~ 175°C (TJ)
-
650 V
34 ns
TO-263AA
GenX3™, XPT™
105 A
2.5V @ 15V, 20A
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
-
IXYP20N65C3D1M
IGBT 650V 18A 50W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
18 A
50 W
-55°C ~ 175°C (TJ)
-
650 V
30 ns
TO-220-3
GenX3™, XPT™
105 A
2.5V @ 15V, 20A
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
-
IXYP10N65C3D1
IGBT 650V 30A 160W TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
30 A
160 W
-55°C ~ 175°C (TJ)
-
650 V
170 ns
TO-220
GenX3™, XPT™
54 A
2.5V @ 15V, 10A
240µJ (on), 110µJ (off)
Standard
18 nC
20ns/77ns
400V, 10A, 50Ohm, 15V
-
IXYP8N90C3
IGBT 900V 20A 125W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
20 A
125 W
-
-
900 V
-
TO-220-3
GenX3™, XPT™
48 A
2.5V @ 15V, 8A
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
-
IXYP15N65C3D1M
IGBT 650V 16A 48W TO-220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
16 A
48 W
-55°C ~ 175°C (TJ)
-
650 V
30 ns
TO-220-3
GenX3™, XPT™
80 A
2.5V @ 15V, 15A
270µJ (on), 230µJ (off)
Standard
19 nC
15ns/68ns
400V, 15A, 20Ohm, 15V
-
IXYH20N65C3
IGBT 650V 50A 230W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
50 A
230 W
-55°C ~ 175°C (TJ)
-
650 V
-
TO-247 (IXTH)
GenX3™, XPT™
105 A
2.5V @ 15V, 20A
430µJ (on), 350µJ (off)
Standard
30 nC
19ns/80ns
400V, 20A, 20Ohm, 15V
-
IXYH30N65C3
IGBT 650V 60A 270W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
60 A
270 W
-55°C ~ 175°C (TJ)
-
650 V
-
TO-247 (IXTH)
GenX3™, XPT™
118 A
2.7V @ 15V, 30A
1mJ (on), 270µJ (off)
Standard
44 nC
21ns/75ns
400V, 30A, 10Ohm, 15V
-
IXYP8N90C3D1
IGBT 900V 20A 125W TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
-
20 A
125 W
-
-
900 V
114 ns
TO-220-3
GenX3™, XPT™
48 A
2.5V @ 15V, 8A
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
-
IXYA8N90C3D1
IGBT 900V 20A 125W C3 TO-263AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
20 A
125 W
-55°C ~ 175°C (TJ)
-
900 V
114 ns
TO-263AA
GenX3™, XPT™
48 A
2.5V @ 15V, 8A
460µJ (on), 180µJ (off)
Standard
13.3 nC
16ns/40ns
450V, 8A, 30Ohm, 15V
-
IXYP30N65C3
DISC IGBT XPT-GENX3 TO-220AB/FP
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
PT
60 A
270 W
-55°C ~ 175°C (TJ)
-
650 V
42 ns
TO-220
GenX3™, XPT™
118 A
2.7V @ 15V, 30A
1mJ (on), 270µJ (off)
Standard
44 nC
21ns/75ns
400V, 30A, 10Ohm, 15V
-
IXYA50N65C3-TRL
IXYA50N65C3 TRL
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
132 A
600 W
-55°C ~ 175°C (TJ)
-
650 V
36 ns
TO-263AA
GenX3™, XPT™
250 A
2.1V @ 15V, 36A
800µJ (on), 470µJ (off)
Standard
86 nC
20ns/90ns
400V, 36A, 5Ohm, 15V
-
IXYH40N90C3
IGBT 900V 105A 600W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
105 A
600 W
-55°C ~ 175°C (TJ)
-
900 V
-
TO-247 (IXTH)
GenX3™, XPT™
200 A
2.5V @ 15V, 40A
1.9mJ (on), 1mJ (off)
Standard
74 nC
27ns/78ns
450V, 40A, 5Ohm, 15V
-
IXYH50N65C3
IGBT 650V 130A 600W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
PT
130 A
600 W
-55°C ~ 175°C (TJ)
-
650 V
-
TO-247 (IXTH)
GenX3™, XPT™
250 A
2.1V @ 15V, 36A
1.3mJ (on), 370µJ (off)
Standard
80 nC
22ns/80ns
400V, 36A, 5Ohm, 15V
-
IXYA50N65C3
IGBT 650V 130A 600W TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
PT
130 A
600 W
-55°C ~ 175°C (TJ)
-
650 V
-
TO-263AA
GenX3™, XPT™
250 A
2.1V @ 15V, 36A
1.3mJ (on), 370µJ (off)
Standard
80 nC
22ns/80ns
400V, 36A, 5Ohm, 15V
-
IXYH50N120C3
IGBT 1200V 100A 750W TO247AD
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
100 A
750 W
-55°C ~ 175°C (TJ)
-
1200 V
-
TO-247 (IXYH)
GenX3™, XPT™
240 A
3.5V @ 15V, 50A
3mJ (on), 1mJ (off)
Standard
142 nC
28ns/133ns
600V, 50A, 5Ohm, 15V
-
IXYH80N90C3
IGBT 900V 165A 830W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
165 A
830 W
-55°C ~ 175°C (TJ)
-
900 V
-
TO-247 (IXTH)
GenX3™, XPT™
360 A
2.7V @ 15V, 80A
4.3mJ (on), 1.9mJ (off)
Standard
145 nC
34ns/90ns
450V, 80A, 2Ohm, 15V
-
IXYH40N120C3D1
IGBT 1200V 64A 480W TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
-
64 A
480 W
-55°C ~ 150°C (TJ)
-
1200 V
195 ns
TO-247 (IXTH)
GenX3™, XPT™
105 A
4V @ 15V, 40A
3.9mJ (on), 660µJ (off)
Standard
85 nC
24ns/125ns
600V, 40A, 10Ohm, 15V
-
MMIX1Y100N120C3H1
IGBT 1200V 92A 400W SMPD
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
24-PowerSMD, 21 Leads
-
92 A
400 W
-55°C ~ 175°C (TJ)
-
1200 V
420 ns
24-SMPD
GenX3™, XPT™
440 A
3.5V @ 15V, 100A
6.5mJ (on), 2.9mJ (off)
Standard
270 nC
48ns/123ns
600V, 100A, 1Ohm, 15V
-

About  Single IGBTs

Single Insulated-Gate Bipolar Transistors (IGBTs) are sophisticated semiconductor devices composed of multiple layers and equipped with three terminals. These devices are specifically designed to handle high currents and offer rapid switching capabilities. They are highly valued in a wide range of applications. The performance and characteristics of single IGBTs are defined by several key parameters. These parameters include the device type, collector-emitter breakdown voltage, collector current rating, pulsed collector current rating, VCE(ON), switching energy, and gate charge. The device type refers to the specific model or variant of the IGBT. Different models may possess distinct features and characteristics tailored to meet the requirements of different applications. The collector-emitter breakdown voltage represents the maximum voltage that the device can withstand across its collector and emitter terminals without experiencing a breakdown or failure. The collector current rating indicates the maximum continuous current that the IGBT can handle while maintaining proper functionality. The pulsed collector current rating specifies the maximum current that the IGBT can endure for short durations, typically in pulsed or transient conditions. VCE(ON) signifies the voltage drop across the collector-emitter junction when the IGBT is fully turned on and conducting current. This parameter is crucial for power loss calculations and efficiency analysis. Switching energy refers to the amount of energy dissipated during the switching process of the IGBT. Minimizing switching energy is vital for reducing power losses and enhancing overall efficiency. Lastly, gate charge denotes the amount of charge required to turn the IGBT on or off. Gate charge influences the switching speed and control characteristics of the device. By considering these parameters, engineers and designers can carefully select the most suitable single IGBT that aligns with the specific requirements of their application, ensuring optimal performance and reliability.