EasyPACK™3 Series, IGBT Modules

Results:
2
Manufacturer
Series
Current - Collector (Ic) (Max)
Input Capacitance (Cies) @ Vce
Vce(on) (Max) @ Vge, Ic
Operating Temperature
NTC Thermistor
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Input
Package / Case
Power - Max
Current - Collector Cutoff (Max)
IGBT Type
Results remaining2
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EasyPACK™3
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseOperating TemperatureVoltage - Collector Emitter Breakdown (Max)IGBT TypeCurrent - Collector (Ic) (Max)Vce(on) (Max) @ Vge, IcPower - MaxConfigurationCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorSupplier Device PackageSeries
F4150R17N3P4B58BPSA1
LOW POWER ECONO AG-ECONO3B-411
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-40°C ~ 150°C (TJ)
1700 V
Trench Field Stop
150 A
2.2V @ 15V, 150A
20 mW
Full Bridge Inverter
1 mA
12.3 nF @ 25 V
Three Phase Bridge Rectifier
Yes
AG-ECONO3B
EasyPACK™3
F4200R17N3E4B58BPSA1
LOW POWER ECONO AG-ECONO3B-411
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Chassis Mount
Module
-40°C ~ 150°C (TJ)
1700 V
Trench Field Stop
200 A
2.3V @ 15V, 200A
20 mW
Full Bridge Inverter
1 mA
16 nF @ 25 V
Three Phase Bridge Rectifier
Yes
AG-ECONO3B
EasyPACK™3

About  IGBT Modules

Insulated-Gate Bipolar Transistors (IGBTs) are advanced power semiconductor devices that are widely utilized as electronic switches. These three-terminal devices offer a combination of high efficiency and fast switching capabilities, making them highly versatile in various applications. IGBTs can be configured as modules in different arrangements to suit specific circuit requirements. These configurations include asymmetrical bridges, boost and buck choppers, brake choppers, full-bridge setups, three-level inverters, and three-phase inverters. This flexibility allows for the efficient control and conversion of power in diverse systems. Some IGBT modules are equipped with built-in NTC thermistors, which are used for temperature monitoring. This feature helps ensure safe operation by allowing real-time monitoring of the device's temperature and preventing overheating. IGBT modules are differentiated based on several key parameters. These parameters include maximum power handling capacity, collector current rating, collector-emitter breakdown voltage, and the specific configuration of the module. By selecting the appropriate IGBT module based on these specifications, designers can optimize the performance and reliability of their circuits. In summary, Insulated-Gate Bipolar Transistors (IGBTs) are three-terminal power semiconductor devices that combine high efficiency and fast switching characteristics. They can be configured as modules in various setups to accommodate different circuit requirements. The availability of built-in temperature monitoring features and the differentiation of modules based on key parameters make IGBTs a versatile choice for applications that demand efficient and precise power control.