ISOPLUS™ Series, IGBT Arrays

Results:
2
Manufacturer
Series
Operating Temperature
NTC Thermistor
Configuration
Current - Collector (Ic) (Max)
Input Capacitance (Cies) @ Vce
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Input
Vce(on) (Max) @ Vge, Ic
Package / Case
Power - Max
Current - Collector Cutoff (Max)
IGBT Type
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ISOPLUS™
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSeriesIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)InputNTC ThermistorPackage / CaseSupplier Device PackageInput Capacitance (Cies) @ Vce
IXA40RG1200DHG-TRR
IGBT H BRIDGE 1200V 63A SMPD
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
ISOPLUS™
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
150 µA
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
-
IXA40RG1200DHG-TUB
IGBT H BRIDGE 1200V 63A SMPD
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
ISOPLUS™
PT
Half Bridge
1200 V
63 A
230 W
2.15V @ 15V, 35A
150 µA
Standard
No
9-SMD Module
ISOPLUS-SMPD™.B
-

About  IGBT Arrays

Insulated-Gate Bipolar Transistors (IGBTs) are advanced power semiconductor devices that offer high efficiency and fast switching capabilities. These three-terminal devices are primarily used as electronic switches in a wide range of applications. One of the key advantages of IGBTs is their ability to handle high power levels, making them ideal for use in switching power supplies and high-power applications such as variable-frequency drives (VFDs), electric cars, trains, lamp ballasts, air-conditioners, and industrial control systems. Their ability to handle large currents and voltages enables efficient power conversion and control in these demanding applications. IGBTs are also commonly used in switching amplifiers, which are essential components in sound systems and industrial control systems. The fast switching speed of IGBTs allows for precise control over the amplification process, resulting in high-quality audio output and efficient power utilization. In certain applications, IGBT arrays are employed, which consist of multiple IGBT devices packaged together in either full-bridge or half-bridge configurations. This configuration offers enhanced power handling capabilities and allows for more complex circuit designs. The "insulated-gate" in the name refers to the presence of an insulating layer between the gate electrode and the semiconductor material. This insulation helps to minimize leakage currents and improve the overall performance of the device. Additionally, IGBTs combine the positive attributes of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), offering the best features of both technologies. In summary, Insulated-Gate Bipolar Transistors (IGBTs) are high-efficiency and fast-switching power semiconductor devices. They find extensive use in various applications, including switching power supplies, VFDs, electric vehicles, industrial control systems, and sound systems. IGBT arrays provide enhanced power handling capabilities, while the insulated-gate design ensures optimal performance and efficiency.