BIMOSFET™ Series, IGBT Arrays

Results:
2
Manufacturer
Series
Current - Collector (Ic) (Max)
Input Capacitance (Cies) @ Vce
Vce(on) (Max) @ Vge, Ic
Current - Collector Cutoff (Max)
Operating Temperature
NTC Thermistor
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Supplier Device Package
Input
Package / Case
Power - Max
IGBT Type
Results remaining2
Applied Filters:
BIMOSFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureSeriesIGBT TypeConfigurationVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)Power - MaxVce(on) (Max) @ Vge, IcCurrent - Collector Cutoff (Max)Input Capacitance (Cies) @ VceInputNTC ThermistorPackage / CaseSupplier Device Package
MMIX4B22N300
IGBT TRANS 3000V 38A
1+
$101.4085
5+
$95.7746
10+
$90.1408
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
-
Full Bridge
3000 V
38 A
150 W
2.7V @ 15V, 22A
35 µA
2.2 nF @ 25 V
Standard
No
24-SMD Module, 9 Leads
24-SMPD
MMIX4B20N300
IGBT F BRIDGE 3000V 34A 24SMPD
1+
$304.2254
5+
$287.3239
10+
$270.4225
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
BIMOSFET™
-
Full Bridge
3000 V
34 A
150 W
3.2V @ 15V, 20A
-
-
Standard
No
24-SMD Module, 9 Leads
24-SMPD

About  IGBT Arrays

Insulated-Gate Bipolar Transistors (IGBTs) are advanced power semiconductor devices that offer high efficiency and fast switching capabilities. These three-terminal devices are primarily used as electronic switches in a wide range of applications. One of the key advantages of IGBTs is their ability to handle high power levels, making them ideal for use in switching power supplies and high-power applications such as variable-frequency drives (VFDs), electric cars, trains, lamp ballasts, air-conditioners, and industrial control systems. Their ability to handle large currents and voltages enables efficient power conversion and control in these demanding applications. IGBTs are also commonly used in switching amplifiers, which are essential components in sound systems and industrial control systems. The fast switching speed of IGBTs allows for precise control over the amplification process, resulting in high-quality audio output and efficient power utilization. In certain applications, IGBT arrays are employed, which consist of multiple IGBT devices packaged together in either full-bridge or half-bridge configurations. This configuration offers enhanced power handling capabilities and allows for more complex circuit designs. The "insulated-gate" in the name refers to the presence of an insulating layer between the gate electrode and the semiconductor material. This insulation helps to minimize leakage currents and improve the overall performance of the device. Additionally, IGBTs combine the positive attributes of both bipolar junction transistors (BJTs) and metal-oxide-semiconductor field-effect transistors (MOSFETs), offering the best features of both technologies. In summary, Insulated-Gate Bipolar Transistors (IGBTs) are high-efficiency and fast-switching power semiconductor devices. They find extensive use in various applications, including switching power supplies, VFDs, electric vehicles, industrial control systems, and sound systems. IGBT arrays provide enhanced power handling capabilities, while the insulated-gate design ensures optimal performance and efficiency.