Single FETs, MOSFETs

Results:
45,196
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining45,196
Select
ImageProduct DetailPriceAvailabilityECAD ModelSeriesMounting TypeOperating TemperatureFET TypeDrain to Source Voltage (Vdss)Package / CaseSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGrade
NVS4001NT1G
MOSFET N-CH 30V 270MA SC70-3
1+
$0.0887
5+
$0.0838
10+
$0.0789
Quantity
352,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
SC-70, SOT-323
SC-70-3 (SOT323)
MOSFET (Metal Oxide)
-
270mA (Ta)
1.5Ohm @ 10mA, 4V
1.5V @ 100µA
2.5V, 4V
1.3 nC @ 5 V
±20V
33 pF @ 5 V
330mW (Ta)
AEC-Q101
Automotive
CSD19538Q3A
MOSFET N-CH 100V 15A 8VSON
1+
$0.1394
5+
$0.1317
10+
$0.1239
Quantity
351,149 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
NexFET™
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
8-PowerVDFN
8-VSONP (3x3.3)
MOSFET (Metal Oxide)
-
15A (Ta)
59mOhm @ 5A, 10V
3.8V @ 250µA
6V, 10V
4.3 nC @ 10 V
±20V
454 pF @ 50 V
2.8W (Ta), 23W (Tc)
-
-
BSP295L6327
SMALL-SIGNAL N-CHANNEL MOSFET
1+
$0.5070
5+
$0.4789
10+
$0.4507
Quantity
349,491 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
TO-261-4, TO-261AA
PG-SOT223-4-21
MOSFET (Metal Oxide)
-
1.8A (Ta)
300mOhm @ 1.8A, 10V
1.8V @ 400µA
4.5V, 10V
17 nC @ 10 V
±20V
368 pF @ 25 V
1.8W (Ta)
DMN3067LW-7
MOSFET N-CH 30V 2.6A SOT-323
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
346,107 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
SC-70, SOT-323
SOT-323
MOSFET (Metal Oxide)
-
2.6A (Ta)
67mOhm @ 2.5A, 4.5V
1.5V @ 250µA
2.5V, 4.5V
4.6 nC @ 4.5 V
±12V
447 pF @ 10 V
500mW (Ta)
-
-
ZXMP10A17E6QTA
MOSFET P-CH 100V 1.3A SOT26
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
345,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
100 V
SOT-23-6
SOT-26
MOSFET (Metal Oxide)
-
1.3A (Ta)
350mOhm @ 1.4A, 10V
4V @ 250µA
6V, 10V
10.7 nC @ 10 V
±20V
424 pF @ 50 V
1.1W (Ta)
-
-
DMN32D2LFB4-7
MOSFET N-CH 30V 300MA 3DFN
1+
$0.0456
5+
$0.0431
10+
$0.0406
Quantity
343,726 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
30 V
3-XFDFN
X2-DFN1006-3
MOSFET (Metal Oxide)
-
300mA (Ta)
1.2Ohm @ 100mA, 4V
1.2V @ 250µA
1.8V, 4V
-
±10V
39 pF @ 3 V
350mW (Ta)
-
-
2N7002ET1G
MOSFET N-CH 60V 260MA SOT23-3
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
342,535 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MOSFET (Metal Oxide)
-
260mA (Ta)
2.5Ohm @ 240mA, 10V
2.5V @ 250µA
4.5V, 10V
0.81 nC @ 5 V
±20V
26.7 pF @ 25 V
300mW (Tj)
-
-
DMN26D0UT-7
MOSFET N-CH 20V 230MA SOT523
1+
$0.0279
5+
$0.0263
10+
$0.0248
Quantity
341,969 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
SOT-523
SOT-523
MOSFET (Metal Oxide)
-
230mA (Ta)
3Ohm @ 100mA, 4.5V
1V @ 250µA
1.2V, 4.5V
-
±10V
14.1 pF @ 15 V
300mW (Ta)
-
-
DMG2302U-7
MOSFET N-CH 20V 4.2A SOT23-3
1+
$0.0373
5+
$0.0352
10+
$0.0331
Quantity
341,674 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET (Metal Oxide)
-
4.2A (Ta)
90mOhm @ 3.6A, 4.5V
1V @ 50µA
2.5V, 4.5V
7 nC @ 4.5 V
±8V
594.3 pF @ 10 V
800mW (Ta)
-
-
AO3403
MOSFET P-CH 30V 2.6A SOT23-3L
1+
$0.0456
5+
$0.0431
10+
$0.0406
Quantity
337,741 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
30 V
3-SMD, SOT-23-3 Variant
SOT-23-3
MOSFET (Metal Oxide)
-
2.6A (Ta)
115mOhm @ 2.6A, 10V
1.4V @ 250µA
2.5V, 10V
7.2 nC @ 10 V
±12V
315 pF @ 15 V
1.4W (Ta)
-
-
DMG2305UX-7
MOSFET P-CH 20V 4.2A SOT23
1+
$0.0330
5+
$0.0311
10+
$0.0293
Quantity
336,403 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
20 V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET (Metal Oxide)
-
4.2A (Ta)
52mOhm @ 4.2A, 4.5V
900mV @ 250µA
1.8V, 4.5V
10.2 nC @ 4.5 V
±8V
808 pF @ 15 V
1.4W (Ta)
-
-
DMN62D1LFD-13
MOSFET N-CH 60V 400MA 3DFN
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
336,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
3-UDFN
X1-DFN1212-3
MOSFET (Metal Oxide)
-
400mA (Ta)
2Ohm @ 100mA, 4V
1V @ 250µA
1.8V, 4V
0.55 nC @ 4.5 V
±20V
36 pF @ 25 V
500mW (Ta)
-
-
NVMFS5C442NAFT1G
MOSFET N-CH 40V 29A/140A 5DFN
1+
$4.0563
5+
$3.8310
10+
$3.6056
Quantity
331,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
40 V
8-PowerTDFN, 5 Leads
5-DFN (5x6) (8-SOFL)
MOSFET (Metal Oxide)
-
29A (Ta), 140A (Tc)
2.3mOhm @ 50A, 10V
4V @ 250µA
10V
32 nC @ 10 V
±20V
2100 pF @ 25 V
3.7W (Ta), 83W (Tc)
AEC-Q101
Automotive
FDMC86102L
MOSFET N-CH 100V 7A/18A 8MLP
1+
$0.8620
5+
$0.8141
10+
$0.7662
Quantity
330,001 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
PowerTrench®
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
100 V
8-PowerWDFN
8-MLP (3.3x3.3)
MOSFET (Metal Oxide)
-
7A (Ta), 18A (Tc)
23mOhm @ 7A, 10V
3V @ 250µA
4.5V, 10V
22 nC @ 10 V
±20V
1330 pF @ 50 V
2.3W (Ta), 41W (Tc)
-
-
2N7002K
MOSFET N-CH 60V 320MA SOT23
1+
$0.0380
5+
$0.0359
10+
$0.0338
Quantity
326,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
SOT-23-3 (TO-236)
MOSFET (Metal Oxide)
-
320mA (Ta)
1.6Ohm @ 500mA, 10V
2.3V @ 250µA
4.5V, 10V
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
300mW (Ta)
-
-
2N7002AQ-7
MOSFET N-CH 60V 180MA SOT23
1+
$0.0393
5+
$0.0371
10+
$0.0349
Quantity
324,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
SOT-23-3
MOSFET (Metal Oxide)
-
180mA (Ta)
5Ohm @ 115mA, 10V
2V @ 250µA
5V
-
±20V
23 pF @ 25 V
370mW (Ta)
AEC-Q101
Automotive
RU1C001UNTCL
MOSFET N-CH 20V 100MA UMT3F
1+
$0.0177
5+
$0.0168
10+
$0.0158
Quantity
323,151 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
150°C (TJ)
N-Channel
20 V
SC-85
UMT3F
MOSFET (Metal Oxide)
-
100mA (Ta)
3.5Ohm @ 100mA, 4.5V
1V @ 100µA
1.2V, 4.5V
-
±12V
7.1 pF @ 10 V
150mW (Ta)
-
-
NVC3S5A51PLZT1G
MOSFET P-CH 60V 1.8A 3CPH
1+
$5.5775
5+
$5.2676
10+
$4.9577
Quantity
321,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 175°C (TJ)
P-Channel
60 V
TO-236-3, SC-59, SOT-23-3
3-CPH
MOSFET (Metal Oxide)
-
1.8A (Ta)
250mOhm @ 1A, 10V
2.6V @ 1mA
4V, 10V
6 nC @ 10 V
±20V
262 pF @ 20 V
1.2W (Ta)
AEC-Q101
Automotive
DMN26D0UFB4-7B
1+
$0.0887
5+
$0.0838
10+
$0.0789
Quantity
320,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
-
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
20 V
3-XFDFN
X2-DFN1006-3
MOSFET (Metal Oxide)
-
240mA (Ta)
3Ohm @ 100mA, 4.5V
900mV @ 250µA
1.5V, 4.5V
-
±10V
14.1 pF @ 15 V
350mW (Ta)
-
-
BSS138NH6327XTSA2
MOSFET N-CH 60V 230MA SOT23-3
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
318,059 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
SIPMOS®
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
60 V
TO-236-3, SC-59, SOT-23-3
PG-SOT23
MOSFET (Metal Oxide)
-
230mA (Ta)
3.5Ohm @ 230mA, 10V
1.4V @ 26µA
4.5V, 10V
1.4 nC @ 10 V
±20V
41 pF @ 25 V
360mW (Ta)
-
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.