Single FETs, MOSFETs

Results:
45,196
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Vgs (Max)
Drain to Source Voltage (Vdss)
Operating Temperature
Qualification
Power - Max
FET Feature
Technology
Configuration
Mounting Type
Voltage - Collector Emitter Breakdown (Max)
Vce Saturation (Max) @ Ib, Ic
Voltage - Cutoff (VGS off) @ Id
Frequency - Transition
Current - Collector (Ic) (Max)
Grade
Current - Drain (Idss) @ Vds (Vgs=0)
FET Type
Current Rating (Amps)
Current - Collector Cutoff (Max)
DC Current Gain (hFE) (Min) @ Ic, Vce
Voltage - Rated
Transistor Type
Current - Test
Gain
Power - Output
Input Type
Number of Outputs
Voltage - Test
Frequency
Voltage - Breakdown (V(BR)GSS)
Cable Opening
Voltage Rating
Shell Size, MIL
Resistance - RDS(On)
Gate Type
Material Flammability Rating
Current - Output (Max)
Voltage - Supply
Channel Type
High Side Voltage - Max (Bootstrap)
Voltage - DC Reverse (Vr) (Max)
Current - Average Rectified (Io)
Operating Temperature - Junction
Logic Voltage - VIL, VIH
Driven Configuration
Capacitance @ Vr, F
Color
Shielding
Voltage - Load
Orientation
Current - Peak Output (Source, Sink)
Current - Reverse Leakage @ Vr
Shell Material
Rise / Fall Time (Typ)
Reverse Recovery Time (trr)
Ingress Protection
Output Type
Current Drain (Id) - Max
Output Configuration
Shell Finish
Shell Size - Insert
Voltage - Output
Connector Type
Features
Noise Figure
Voltage - Supply (Vcc/Vdd)
Voltage - Input
Primary Material
Contact Finish - Mating
Speed
Number of Positions
Applications
Ratio - Input
Switch Type
Number of Drivers
Termination
Fastening Type
Rds On (Typ)
Mounting Feature
Fault Protection
Voltage - Forward (Vf) (Max) @ If
Interface
Results remaining45,196
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSeriesTechnologyFET FeatureVgs(th) (Max) @ IdDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
CSD13381F4
MOSFET N-CH 12V 2.1A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
850,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
3-XFDFN
-
NexFET™
MOSFET (Metal Oxide)
-
1.1V @ 250µA
12 V
2.1A (Ta)
1.8V, 4.5V
180mOhm @ 500mA, 4.5V
1.4 nC @ 4.5 V
8V
200 pF @ 6 V
500mW (Ta)
3-PICOSTAR
-
FDN338P
SMALL SIGNAL FIELD-EFFECT TRANSI
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
845,095 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
MOSFET (Metal Oxide)
-
1.5V @ 250µA
20 V
1.6A (Ta)
2.5V, 4.5V
115mOhm @ 1.6A, 4.5V
6.2 nC @ 4.5 V
±8V
451 pF @ 10 V
500mW (Ta)
SOT-23-3
AO3401A
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
828,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
3-SMD, SOT-23-3 Variant
-
-
MOSFET (Metal Oxide)
-
1.3V @ 250µA
30 V
4A (Ta)
2.5V, 10V
44mOhm @ 4.3A, 10V
12.2 nC @ 4.5 V
±12V
1200 pF @ 15 V
1.4W (Ta)
SOT-23-3
-
NVMFS5832NLT3G
MOSFET N-CH 40V 21A 5DFN
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
820,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
8-PowerTDFN, 5 Leads
Automotive
-
MOSFET (Metal Oxide)
-
2.4V @ 250µA
40 V
21A (Ta)
4.5V, 10V
4.2mOhm @ 20A, 10V
51 nC @ 10 V
±20V
2700 pF @ 25 V
3.7W (Ta), 127W (Tc)
5-DFN (5x6) (8-SOFL)
AEC-Q101
FDP085N10A
MOSFET N-CH 100V 96A TO220-3
1+
$2.1549
5+
$2.0352
10+
$1.9155
Quantity
800,001 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
PowerTrench®
MOSFET (Metal Oxide)
-
4V @ 250µA
100 V
96A (Tc)
10V
8.5mOhm @ 96A, 10V
40 nC @ 10 V
±20V
2695 pF @ 50 V
188W (Tc)
TO-220-3
-
SI2305CDS-T1-GE3
MOSFET P-CH 8V 5.8A SOT23-3
1+
$0.1648
5+
$0.1556
10+
$0.1465
Quantity
718,090 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
TrenchFET®
MOSFET (Metal Oxide)
-
1V @ 250µA
8 V
5.8A (Tc)
1.8V, 4.5V
35mOhm @ 4.4A, 4.5V
30 nC @ 8 V
±8V
960 pF @ 4 V
960mW (Ta), 1.7W (Tc)
SOT-23-3 (TO-236)
-
2N7002KT1G
MOSFET N-CH 60V 320MA SOT23-3
1+
$0.0228
5+
$0.0215
10+
$0.0203
Quantity
710,990 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
2.3V @ 250µA
60 V
320mA (Ta)
4.5V, 10V
1.6Ohm @ 500mA, 10V
0.7 nC @ 4.5 V
±20V
24.5 pF @ 20 V
300mW (Ta)
SOT-23-3 (TO-236)
-
IRLML2402TRPBF
MOSFET N-CH 20V 1.2A SOT23
1+
$0.0659
5+
$0.0623
10+
$0.0586
Quantity
691,859 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
HEXFET®
MOSFET (Metal Oxide)
-
700mV @ 250µA (Min)
20 V
1.2A (Ta)
2.7V, 4.5V
250mOhm @ 930mA, 4.5V
3.9 nC @ 4.5 V
±12V
110 pF @ 15 V
540mW (Ta)
Micro3™/SOT-23
-
SI3401A-TP
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
660,209 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
1.3V @ 250µA
30 V
4.2A (Tj)
2.5V, 10V
60mOhm @ 4.2A, 10V
-
±12V
1050 pF @ 15 V
400mW
SOT-23
-
CSD23280F3
MOSFET P-CH 12V 1.8A 3PICOSTAR
1+
$0.0507
5+
$0.0479
10+
$0.0451
Quantity
636,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
3-XFDFN
-
FemtoFET™
MOSFET (Metal Oxide)
-
950mV @ 250µA
12 V
1.8A (Ta)
1.5V, 4.5V
116mOhm @ 400mA, 4.5V
1.23 nC @ 4.5 V
-6V
234 pF @ 6 V
500mW (Ta)
3-PICOSTAR
-
BSS138W-7-F
MOSFET N-CH 50V 200MA SOT323
1+
$0.0254
5+
$0.0239
10+
$0.0225
Quantity
629,426 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
SC-70, SOT-323
-
-
MOSFET (Metal Oxide)
-
1.5V @ 250µA
50 V
200mA (Ta)
10V
3.5Ohm @ 220mA, 10V
-
±20V
50 pF @ 10 V
200mW (Ta)
SOT-323
-
IRLML2246TRPBF
MOSFET P-CH 20V 2.6A SOT23
1+
$0.0761
5+
$0.0718
10+
$0.0676
Quantity
623,339 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
HEXFET®
MOSFET (Metal Oxide)
-
1.1V @ 10µA
20 V
2.6A (Ta)
2.5V, 4.5V
135mOhm @ 2.6A, 4.5V
2.9 nC @ 4.5 V
±12V
220 pF @ 16 V
1.3W (Ta)
Micro3™/SOT-23
-
SI2306-TP
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
615,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
3.16A (Ta)
10V
65mOhm @ 2.5A, 4.5V
4.5 nC @ 5 V
±20V
305 pF @ 15 V
750mW
SOT-23
-
IRFR1205TRPBF
MOSFET N-CH 55V 44A DPAK
1+
$0.5577
5+
$0.5268
10+
$0.4958
Quantity
603,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
HEXFET®
MOSFET (Metal Oxide)
-
4V @ 250µA
55 V
44A (Tc)
10V
27mOhm @ 26A, 10V
65 nC @ 10 V
±20V
1300 pF @ 25 V
107W (Tc)
TO-252AA (DPAK)
-
IRFR1205TRPBF
IRFR1205 - 12V-300V N-CHANNEL PO
1+
$0.5577
5+
$0.5268
10+
$0.4958
Quantity
603,700 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
MOSFET (Metal Oxide)
-
4V @ 250µA
55 V
44A (Tc)
10V
27mOhm @ 26A, 10V
65 nC @ 10 V
±20V
1300 pF @ 25 V
107W (Tc)
D-Pak
DMG1013UW-7
MOSFET P-CH 20V 820MA SOT323
1+
$0.0426
5+
$0.0402
10+
$0.0379
Quantity
602,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
SC-70, SOT-323
-
-
MOSFET (Metal Oxide)
-
1V @ 250µA
20 V
820mA (Ta)
1.8V, 4.5V
750mOhm @ 430mA, 4.5V
0.622 nC @ 4.5 V
±6V
59.76 pF @ 16 V
310mW (Ta)
SOT-323
-
2N7002
SOT-23 N 60V 0.34A Transistors
1+
$0.0203
5+
$0.0192
10+
$0.0180
Quantity
600,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
60 V
115mA (Ta)
5V, 10V
7.5Ohm @ 500mA, 10V
-
±20V
50 pF @ 25 V
200mW (Ta)
SOT-23-3
-
2N7002E-T1-GE3
MOSFET N-CH 60V 240MA TO236
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
597,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-236-3, SC-59, SOT-23-3
-
-
MOSFET (Metal Oxide)
-
2.5V @ 250µA
60 V
240mA (Ta)
10V
3Ohm @ 250mA, 10V
0.6 nC @ 4.5 V
±20V
21 pF @ 5 V
350mW (Ta)
TO-236
-
TP0610K-T1-GE3
MOSFET P-CH 60V 185MA SOT23-3
1+
$0.0368
5+
$0.0347
10+
$0.0327
Quantity
555,555 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
60 V
185mA (Ta)
4.5V, 10V
6Ohm @ 500mA, 10V
1.7 nC @ 15 V
±20V
23 pF @ 25 V
350mW (Ta)
SOT-23-3 (TO-236)
-
SI2307BDS-T1-E3
MOSFET P-CH 30V 2.5A SOT23-3
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
543,899 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
P-Channel
TO-236-3, SC-59, SOT-23-3
-
TrenchFET®
MOSFET (Metal Oxide)
-
3V @ 250µA
30 V
2.5A (Ta)
4.5V, 10V
78mOhm @ 3.2A, 10V
15 nC @ 10 V
±20V
380 pF @ 15 V
750mW (Ta)
SOT-23-3 (TO-236)
-

Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.