U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageFET TypeOperating TemperatureDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM3J168F,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
SOT-23-3
P-Channel
150°C
60 V
-
MOSFET (Metal Oxide)
-
400mA (Ta)
1.9Ohm @ 100mA, 4.5V
2V @ 1mA
U-MOSVI
4V, 10V
3 nC @ 10 V
+20V, -16V
82 pF @ 10 V
1.2W (Ta)
-
SSM3J334R,LF
1+
$0.0634
5+
$0.0599
10+
$0.0563
Quantity
3,150 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
P-Channel
150°C (TJ)
30 V
-
MOSFET (Metal Oxide)
-
4A (Ta)
71mOhm @ 3A, 10V
2V @ 100µA
U-MOSVI
4V, 10V
5.9 nC @ 10 V
±20V
280 pF @ 15 V
1W (Ta)
-
SSM3J356R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
P-Channel
150°C (TJ)
60 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
300mOhm @ 1A, 10V
2V @ 1mA
U-MOSVI
4V, 10V
8.3 nC @ 10 V
+10V, -20V
330 pF @ 10 V
1W (Ta)
-
SSM6J505NU,LF
1+
$0.3042
5+
$0.2873
10+
$0.2704
Quantity
51,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
6-UDFNB (2x2)
P-Channel
150°C (TJ)
12 V
-
MOSFET (Metal Oxide)
-
12A (Ta)
12mOhm @ 4A, 4.5V
1V @ 1mA
U-MOSVI
1.2V, 4.5V
37.6 nC @ 4.5 V
±6V
2700 pF @ 10 V
1.25W (Ta)
-
SSM3J351R,LXHF
AECQ MOSFET PCH -60V -3.5A SOT23
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
33,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
P-Channel
150°C
60 V
Automotive
MOSFET (Metal Oxide)
-
3.5A (Ta)
134mOhm @ 1A, 10V
2V @ 1mA
U-MOSVI
4V, 10V
15.1 nC @ 10 V
+10V, -20V
660 pF @ 10 V
1W (Ta)
AEC-Q101
SSM3J46CTB(TPL3)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, No Lead
CST3B
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
2A (Ta)
103mOhm @ 1.5A, 4.5V
1V @ 1mA
U-MOSVI
1.5V, 4.5V
4.7 nC @ 4.5 V
±8V
290 pF @ 10 V
-
-
SSM3J56MFV,L3F
1+
$0.0887
5+
$0.0838
10+
$0.0789
Quantity
8,009 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-723
VESM
P-Channel
150°C (TJ)
20 V
-
MOSFET (Metal Oxide)
-
800mA (Ta)
390mOhm @ 800mA, 4.5V
-
U-MOSVI
1.2V, 4.5V
-
±8V
100 pF @ 10 V
150mW (Ta)
-
SSM3J372R,LF
1+
$0.1344
5+
$0.1269
10+
$0.1194
Quantity
289,552 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
SOT-23F
P-Channel
150°C
30 V
-
MOSFET (Metal Oxide)
-
6A (Ta)
42mOhm @ 5A, 10V
1.2V @ 1mA
U-MOSVI
1.8V, 10V
8.2 nC @ 4.5 V
+12V, -6V
560 pF @ 15 V
1W (Ta)
-
SSM3J140TU,LXHF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, Flat Leads
UFM
P-Channel
150°C
20 V
Automotive
MOSFET (Metal Oxide)
-
4.4A (Ta)
25.8mOhm @ 4A, 4.5V
1V @ 1mA
U-MOSVI
1.5V, 4.5V
24.8 nC @ 4.5 V
+6V, -8V
1800 pF @ 10 V
500mW (Ta)
AEC-Q101
TJ15S06M3L,LXHQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
P-Channel
175°C
60 V
-
MOSFET (Metal Oxide)
-
15A (Ta)
50mOhm @ 7.5A, 10V
3V @ 1mA
U-MOSVI
6V, 10V
36 nC @ 10 V
+10V, -20V
1770 pF @ 10 V
41W (Tc)
-
TJ30S06M3L,LXHQ
1+
$1.0648
5+
$1.0056
10+
$0.9465
Quantity
10,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
P-Channel
175°C
60 V
-
MOSFET (Metal Oxide)
-
30A (Ta)
21.8mOhm @ 15A, 10V
3V @ 1mA
U-MOSVI
6V, 10V
80 nC @ 10 V
+10V, -20V
3950 pF @ 10 V
68W (Tc)
-
XPH4R714MC,L1XHQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
8-SOP Advance (5x5)
P-Channel
175°C
40 V
-
MOSFET (Metal Oxide)
-
60A (Ta)
4.7mOhm @ 30A, 10V
2.1V @ 1mA
U-MOSVI
4.5V, 10V
160 nC @ 10 V
+10V, -20V
5640 pF @ 10 V
960mW (Ta), 132W (Tc)
-
TJ90S04M3L,LXHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
P-Channel
175°C
40 V
-
MOSFET (Metal Oxide)
-
90A (Ta)
4.3mOhm @ 45A, 10V
2V @ 1mA
U-MOSVI
4.5V, 10V
172 nC @ 10 V
+10V, -20V
7700 pF @ 10 V
180W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.