U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureDrain to Source Voltage (Vdss)Supplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM3J353F,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-236-3, SC-59, SOT-23-3
P-Channel
150°C
30 V
S-Mini
-
MOSFET (Metal Oxide)
-
2A (Ta)
2.2V @ 250µA
U-MOSVI
4V, 10V
150mOhm @ 2A, 10V
3.4 nC @ 4.5 V
+20V, -25V
159 pF @ 15 V
600mW (Ta)
-
SSM3J328R,LF
1+
$0.0406
5+
$0.0383
10+
$0.0361
Quantity
36,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C (TJ)
20 V
SOT-23F
-
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
1W (Ta)
-
SSM3J351R,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C
60 V
SOT-23F
-
MOSFET (Metal Oxide)
-
3.5A (Ta)
2V @ 1mA
U-MOSVI
4V, 10V
134mOhm @ 1A, 10V
15.1 nC @ 10 V
+10V, -20V
660 pF @ 10 V
2W (Ta)
-
SSM3J332R,LF
1+
$0.0279
5+
$0.0263
10+
$0.0248
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C (TJ)
30 V
SOT-23F
-
MOSFET (Metal Oxide)
-
6A (Ta)
1.2V @ 1mA
U-MOSVI
1.8V, 10V
42mOhm @ 5A, 10V
8.2 nC @ 4.5 V
±12V
560 pF @ 15 V
1W (Ta)
-
SSM3J133TU,LF
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
2,158 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, Flat Leads
P-Channel
150°C (TJ)
20 V
UFM
-
MOSFET (Metal Oxide)
-
5.5A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
500mW (Ta)
-
SSM6J501NU,LF
1+
$0.1141
5+
$0.1077
10+
$0.1014
Quantity
300,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
P-Channel
150°C (TJ)
20 V
6-UDFNB (2x2)
-
MOSFET (Metal Oxide)
-
10A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
15.3mOhm @ 4A, 4.5V
29.9 nC @ 4.5 V
±8V
2600 pF @ 10 V
1W (Ta)
-
SSM3J130TU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, Flat Leads
P-Channel
150°C (TJ)
20 V
UFM
-
MOSFET (Metal Oxide)
-
4.4A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
25.8mOhm @ 4A, 4.5V
24.8 nC @ 4.5 V
±8V
1800 pF @ 10 V
500mW (Ta)
-
SSM6J507NU,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
6-WDFN Exposed Pad
P-Channel
150°C (TJ)
30 V
6-UDFNB (2x2)
-
MOSFET (Metal Oxide)
-
10A (Ta)
2.2V @ 250µA
U-MOSVI
4V, 10V
20mOhm @ 4A, 10V
20.4 nC @ 4.5 V
+20V, -25V
1150 pF @ 15 V
1.25W (Ta)
-
TJ15S06M3L(T6L1,NQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C (TJ)
60 V
DPAK+
-
MOSFET (Metal Oxide)
-
15A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
50mOhm @ 7.5A, 10V
36 nC @ 10 V
+10V, -20V
1770 pF @ 10 V
41W (Tc)
-
TJ40S04M3L(T6L1,NQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C (TJ)
40 V
DPAK+
-
MOSFET (Metal Oxide)
-
40A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
9.1mOhm @ 20A, 10V
83 nC @ 10 V
+10V, -20V
4140 pF @ 10 V
68W (Tc)
-
TJ20S04M3L(T6L1,NQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C (TJ)
40 V
DPAK+
-
MOSFET (Metal Oxide)
-
20A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
22.2mOhm @ 10A, 10V
37 nC @ 10 V
+10V, -20V
1850 pF @ 10 V
41W (Tc)
-
TJ15P04M3,RQ(S
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
150°C (TJ)
40 V
DPAK
-
MOSFET (Metal Oxide)
-
15A (Ta)
2V @ 100µA
U-MOSVI
4.5V, 10V
36mOhm @ 7.5A, 10V
26 nC @ 10 V
±20V
1100 pF @ 10 V
29W (Tc)
-
TJ60S06M3L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C
60 V
DPAK+
-
MOSFET (Metal Oxide)
-
60A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
11.2mOhm @ 30A, 10V
156 nC @ 10 V
+10V, -20V
7760 pF @ 10 V
100W (Tc)
-
SSM6J214FE(TE85L,F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-563, SOT-666
P-Channel
150°C
30 V
ES6
-
MOSFET (Metal Oxide)
-
3.6A (Ta)
1.2V @ 1mA
U-MOSVI
1.8V, 10V
50mOhm @ 3A, 10V
7.9 nC @ 4.5 V
±12V
560 pF @ 15 V
500mW (Ta)
-
XPH3R114MC,L1XHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
P-Channel
175°C
40 V
8-SOP Advance (5x5)
-
MOSFET (Metal Oxide)
-
100A (Ta)
2.1V @ 1mA
U-MOSVI
4.5V, 10V
3.1mOhm @ 50A, 10V
230 nC @ 10 V
+10V, -20V
9500 pF @ 10 V
960mW (Ta), 170W (Tc)
-
SSM3J143TU,LXHF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
3-SMD, Flat Leads
P-Channel
150°C
20 V
UFM
Automotive
MOSFET (Metal Oxide)
-
5.5A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
500mW (Ta)
AEC-Q101
SSM6J215FE(TE85L,F
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-563, SOT-666
P-Channel
150°C (TJ)
20 V
ES6
-
MOSFET (Metal Oxide)
-
3.4A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
59mOhm @ 3A, 4.5V
10.4 nC @ 4.5 V
±8V
630 pF @ 10 V
500mW (Ta)
-
TJ60S04M3L,LXHQ
1+
$30.4225
5+
$28.7324
10+
$27.0423
Quantity
188 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C
40 V
DPAK+
-
MOSFET (Metal Oxide)
-
60A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
6.3mOhm @ 30A, 10V
125 nC @ 10 V
+10V, -20V
6510 pF @ 10 V
90W (Tc)
-
TJ20S04M3L,LXHQ
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
P-Channel
175°C
40 V
DPAK+
-
MOSFET (Metal Oxide)
-
20A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
22.2mOhm @ 10A, 10V
37 nC @ 10 V
+10V, -20V
1850 pF @ 10 V
41W (Tc)
-
SSM3J378R,LXHF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
SOT-23-3 Flat Leads
P-Channel
150°C
20 V
SOT-23F
Automotive
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
1W (Ta)
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.