U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeOperating TemperatureTechnologyFET FeatureVgs(th) (Max) @ IdSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
TJ200F04M3L,LXHQ
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Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-
175°C
MOSFET (Metal Oxide)
-
3V @ 1mA
U-MOSVI
200A (Ta)
6V, 10V
1.8mOhm @ 100A, 10V
460 nC @ 10 V
+10V, -20V
1280 pF @ 10 V
375W (Tc)
TO-220SM(W)
-
TJ10S04M3L,LXHQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-
175°C
MOSFET (Metal Oxide)
-
3V @ 1mA
U-MOSVI
10A (Ta)
6V, 10V
44mOhm @ 5A, 10V
19 nC @ 10 V
+10V, -20V
930 pF @ 10 V
27W (Tc)
DPAK+
-
TPC8134,LQ(S
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
4,270 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-SOIC (0.154", 3.90mm Width)
40 V
-
150°C (TJ)
MOSFET (Metal Oxide)
-
2V @ 100µA
U-MOSVI
5A (Ta)
4.5V, 10V
52mOhm @ 2.5A, 10V
20 nC @ 10 V
+20V, -25V
890 pF @ 10 V
1W (Ta)
8-SOP
-
TPC8129,LQ(S
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-SOIC (0.154", 3.90mm Width)
30 V
-
150°C (TJ)
MOSFET (Metal Oxide)
-
2V @ 200µA
U-MOSVI
9A (Ta)
4.5V, 10V
22mOhm @ 4.5A, 10V
39 nC @ 10 V
+20V, -25V
1650 pF @ 10 V
1W (Ta)
8-SOP
-
TPCC8105,L1Q
PB-F POWER MOSFET TRANSISTOR TSO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-VDFN Exposed Pad
30 V
-
150°C
MOSFET (Metal Oxide)
-
2V @ 500µA
U-MOSVI
23A (Ta)
4.5V, 10V
7.8mOhm @ 11.5A, 10V
76 nC @ 10 V
+20V, -25V
3240 pF @ 10 V
700mW (Ta), 30W (Tc)
8-TSON Advance (3.3x3.3)
-
TJ8S06M3L(T6L1,NQ)
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
60 V
-
175°C (TJ)
MOSFET (Metal Oxide)
-
3V @ 1mA
U-MOSVI
8A (Ta)
6V, 10V
104mOhm @ 4A, 10V
19 nC @ 10 V
+10V, -20V
890 pF @ 10 V
27W (Tc)
DPAK+
-
SSM3J66MFV,L3XHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-723
20 V
-
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
800mA (Ta)
1.2V, 4.5V
390mOhm @ 800mA, 4.5V
1.6 nC @ 4.5 V
+6V, -8V
100 pF @ 10 V
150mW (Ta)
VESM
-
TJ30S06M3L(T6L1,NQ
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
60 V
-
175°C (TJ)
MOSFET (Metal Oxide)
-
3V @ 1mA
U-MOSVI
30A (Ta)
6V, 10V
21.8mOhm @ 15A, 10V
80 nC @ 10 V
+10V, -20V
3950 pF @ 10 V
68W (Tc)
DPAK+
-
SSM3J327R,LF
1+
$0.3803
5+
$0.3592
10+
$0.3380
Quantity
63,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
20 V
-
150°C (TJ)
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
3.9A (Ta)
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.6 nC @ 4.5 V
±8V
290 pF @ 10 V
1W (Ta)
SOT-23F
-
SSM3J56ACT,L3F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SC-101, SOT-883
20 V
-
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
1.4A (Ta)
1.2V, 4.5V
390mOhm @ 800mA, 4.5V
1.6 nC @ 4.5 V
±8V
100 pF @ 10 V
500mW (Ta)
CST3
-
SSM3J325F,LF
1+
$0.1901
5+
$0.1796
10+
$0.1690
Quantity
57,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
-
150°C (TJ)
MOSFET (Metal Oxide)
-
-
U-MOSVI
2A (Ta)
1.5V, 4.5V
150mOhm @ 1A, 4.5V
4.6 nC @ 4.5 V
±8V
270 pF @ 10 V
600mW (Ta)
S-Mini
-
SSM3J375F,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-236-3, SC-59, SOT-23-3
20 V
-
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
2A (Ta)
1.5V, 4.5V
150mOhm @ 1A, 4.5V
4.6 nC @ 4.5 V
+6V, -8V
270 pF @ 10 V
600mW (Ta)
S-Mini
-
SSM3J377R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
20 V
-
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
3.9A (Ta)
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.6 nC @ 4.5 V
+6V, -8V
290 pF @ 10 V
1W (Ta)
SOT-23F
-
SSM3K345R,LF
MOSFET N-CHANNEL 20V 4A SOT23F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
SOT-23-3 Flat Leads
20 V
-
150°C (TJ)
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
4A (Ta)
1.5V, 4.5V
33mOhm @ 4A, 4.5V
3.6 nC @ 4.5 V
±8V
410 pF @ 10 V
1W (Ta)
SOT-23F
-
SSM3J377R,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
20 V
Automotive
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
3.9A (Ta)
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.6 nC @ 4.5 V
+6V, -8V
290 pF @ 10 V
1W (Ta)
SOT-23F
AEC-Q101
SSM3J378R,LF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
20 V
-
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
6A (Ta)
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
1W (Ta)
SOT-23F
-
SSM3J340R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
30 V
-
150°C
MOSFET (Metal Oxide)
-
2.2V @ 250µA
U-MOSVI
4A (Ta)
4V, 10V
45mOhm @ 4A, 10V
6.2 nC @ 4.5 V
+20V, -25V
492 pF @ 10 V
1W (Ta)
SOT-23F
-
SSM3J374R,LF
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
30 V
-
150°C
MOSFET (Metal Oxide)
-
2V @ 100µA
U-MOSVI
4A (Ta)
4V, 10V
71mOhm @ 3A, 10V
5.9 nC @ 10 V
+10V, -20V
280 pF @ 15 V
1W (Ta)
SOT-23F
-
SSM3J331R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
20 V
-
150°C (TJ)
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
4A (Ta)
1.5V, 4.5V
55mOhm @ 3A, 4.5V
10.4 nC @ 4.5 V
±8V
630 pF @ 10 V
1W (Ta)
SOT-23F
-
SSM3J371R,LF
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
20 V
-
150°C
MOSFET (Metal Oxide)
-
1V @ 1mA
U-MOSVI
4A (Ta)
1.5V, 4.5V
55mOhm @ 3A, 4.5V
10.4 nC @ 4.5 V
+6V, -8V
630 pF @ 10 V
1W (Ta)
SOT-23F
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.