U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperatureDrain to Source Voltage (Vdss)Package / CaseSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGrade
SSM3J356R,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
60 V
SOT-23-3 Flat Leads
SOT-23F
MOSFET (Metal Oxide)
-
2A (Ta)
2V @ 1mA
U-MOSVI
4V, 10V
300mOhm @ 1A, 10V
8.3 nC @ 10 V
+10V, -20V
330 pF @ 10 V
1W (Ta)
AEC-Q101
Automotive
SSM3J132TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C
12 V
3-SMD, Flat Leads
UFM
MOSFET (Metal Oxide)
-
5.4A (Ta)
1V @ 1mA
U-MOSVI
1.2V, 4.5V
17mOhm @ 5A, 4.5V
33 nC @ 4.5 V
±6V
2700 pF @ 10 V
500mW (Ta)
-
-
TJ8S06M3L,LXHQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C
60 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
8A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
104mOhm @ 4A, 10V
19 nC @ 10 V
+10V, -20V
890 pF @ 10 V
27W (Tc)
-
-
TPC8132,LQ(S
1+
$0.4310
5+
$0.4070
10+
$0.3831
Quantity
2,080 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
40 V
8-SOIC (0.154", 3.90mm Width)
8-SOP
MOSFET (Metal Oxide)
-
7A (Ta)
2V @ 200µA
U-MOSVI
4.5V, 10V
25mOhm @ 3.5A, 10V
34 nC @ 10 V
+20V, -25V
1580 pF @ 10 V
1W (Ta)
-
-
TPC8125,LQ(S
1+
$1.1408
5+
$1.0775
10+
$1.0141
Quantity
928 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
30 V
8-SOIC (0.154", 3.90mm Width)
8-SOP
MOSFET (Metal Oxide)
-
10A (Ta)
2V @ 500µA
U-MOSVI
4.5V, 10V
13mOhm @ 5A, 10V
64 nC @ 10 V
+20V, -25V
2580 pF @ 10 V
1W (Ta)
-
-
TJ40S04M3L,LXHQ
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
8,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
40A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
9.1mOhm @ 20A, 10V
83 nC @ 10 V
+10V, -20V
4140 pF @ 10 V
68W (Tc)
-
-
TPN4R712MD,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
8-PowerVDFN
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
-
36A (Tc)
1.2V @ 1mA
U-MOSVI
2.5V, 4.5V
4.7mOhm @ 18A, 4.5V
65 nC @ 5 V
±12V
4300 pF @ 10 V
42W (Tc)
-
-
TJ90S04M3L,LQ
PB-F POWER MOSFET TRANSISTOR DPA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
90A (Ta)
2V @ 1mA
U-MOSVI
4.5V, 10V
4.3mOhm @ 45A, 10V
172 nC @ 10 V
+10V, -20V
7700 pF @ 10 V
180W (Tc)
-
-
TJ60S06M3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C (TJ)
60 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
60A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
11.2mOhm @ 30A, 10V
156 nC @ 10 V
+10V, -20V
7760 pF @ 10 V
100W (Tc)
-
-
TJ10S04M3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C (TJ)
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
10A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
44mOhm @ 5A, 10V
19 nC @ 10 V
+10V, -20V
930 pF @ 10 V
27W (Tc)
-
-
TJ80S04M3L,LXHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
80A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
5.2mOhm @ 40A, 10V
158 nC @ 10 V
+10V, -20V
7770 pF @ 10 V
100W (Tc)
-
-
TJ80S04M3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C (TJ)
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
80A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
5.2mOhm @ 40A, 10V
158 nC @ 10 V
+10V, -20V
7770 pF @ 10 V
100W (Tc)
-
-
TPC8133,LQ(S
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
40 V
8-SOIC (0.154", 3.90mm Width)
8-SOP
MOSFET (Metal Oxide)
-
9A (Ta)
2V @ 500µA
U-MOSVI
4.5V, 10V
15mOhm @ 4.5A, 10V
64 nC @ 10 V
+20V, -25V
2900 pF @ 10 V
1W (Ta)
-
-
TJ60S04M3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C (TJ)
40 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
60A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
6.3mOhm @ 30A, 10V
125 nC @ 10 V
+10V, -20V
6510 pF @ 10 V
90W (Tc)
-
-
TJ50S06M3L,LXHQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C
60 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
50A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
13.8mOhm @ 25A, 10V
124 nC @ 10 V
+10V, -20V
6290 pF @ 10 V
90W (Tc)
-
-
TPH1R712MD,L1Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
8-PowerVDFN
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
60A (Tc)
1.2V @ 1mA
U-MOSVI
2.5V, 4.5V
1.7mOhm @ 30A, 4.5V
182 nC @ 5 V
±12V
10900 pF @ 10 V
78W (Tc)
-
-
TJ50S06M3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
175°C (TJ)
60 V
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK+
MOSFET (Metal Oxide)
-
50A (Ta)
3V @ 1mA
U-MOSVI
6V, 10V
13.8mOhm @ 25A, 10V
124 nC @ 10 V
+10V, -20V
6290 pF @ 10 V
90W (Tc)
-
-
SSM6J212FE,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
SOT-563, SOT-666
ES6
MOSFET (Metal Oxide)
-
4A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
40.7mOhm @ 3A, 4.5V
14.1 nC @ 4.5 V
±8V
970 pF @ 10 V
500mW (Ta)
-
-
SSM6J213FE(TE85L,F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
SOT-563, SOT-666
ES6
MOSFET (Metal Oxide)
-
2.6A (Ta)
1V @ 1mA
U-MOSVI
1.5V, 4.5V
103mOhm @ 1.5A, 4.5V
4.7 nC @ 4.5 V
±8V
290 pF @ 10 V
500mW (Ta)
-
-
SSM6J771G,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
20 V
6-UFBGA, WLCSP
-
MOSFET (Metal Oxide)
-
5A (Ta)
1.2V @ 1mA
U-MOSVI
2.5V, 8.5V
31mOhm @ 3A, 8.5V
9.8 nC @ 4.5 V
±12V
870 pF @ 10 V
1.2W (Ta)
-
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.