U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TJ20A10M3(STA4,Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
P-Channel
TO-220-3 Full Pack
150°C
-
TO-220SIS
MOSFET (Metal Oxide)
-
20A (Ta)
4V @ 1mA
U-MOSVI
100 V
10V
90mOhm @ 10A, 10V
120 nC @ 10 V
±20V
5500 pF @ 10 V
35W (Tc)
-
SSM3J144TU,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Leads
150°C
Automotive
UFM
MOSFET (Metal Oxide)
-
3.2A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.7 nC @ 4.5 V
+6V, -8V
290 pF @ 10 V
500mW (Ta)
AEC-Q101
SSM6J216FE,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-563, SOT-666
150°C
-
ES6
MOSFET (Metal Oxide)
-
4.8A (Ta)
1V @ 1mA
U-MOSVI
12 V
1.5V, 4.5V
32mOhm @ 3.5A, 4.5V
12.7 nC @ 4.5 V
±8V
1040 pF @ 12 V
700mW (Ta)
-
XPN9R614MC,L1XHQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
175°C
Automotive
8-TSON Advance-WF (3.1x3.1)
MOSFET (Metal Oxide)
-
40A (Ta)
2.1V @ 500µA
U-MOSVI
40 V
4.5V, 10V
9.6mOhm @ 20A, 10V
64 nC @ 10 V
+10V, -20V
3000 pF @ 10 V
840mW (Ta), 100W (Tc)
AEC-Q101
TPCP8107,LF
1+
$1.4937
5+
$1.4107
10+
$1.3277
Quantity
20 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-SMD, Flat Lead
175°C
-
PS-8
MOSFET (Metal Oxide)
-
8A (Ta)
3V @ 1mA
U-MOSVI
40 V
6V, 10V
18mOhm @ 4A, 10V
44.6 nC @ 10 V
+10V, -20V
2160 pF @ 10 V
1W (Ta)
-
SSM6J412TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-SMD, Flat Leads
150°C
-
UF6
MOSFET (Metal Oxide)
-
4A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
42.7mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
±8V
840 pF @ 10 V
1W (Ta)
-
SSM6J422TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-SMD, Flat Leads
150°C
-
UF6
MOSFET (Metal Oxide)
-
4A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
42.7mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
1W (Ta)
-
SSM3J145TU,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Leads
150°C
Automotive
UFM
MOSFET (Metal Oxide)
-
3A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
103mOhm @ 1A, 4.5V
4.6 nC @ 4.5 V
+6V, -8V
270 pF @ 10 V
500mW (Ta)
AEC-Q101
SSM3J145TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Lead
150°C
-
UFM
MOSFET (Metal Oxide)
-
3A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
103mOhm @ 1A, 4.5V
4.6 nC @ 4.5 V
+6V, -8V
270 pF @ 10 V
500mW (Ta)
-
SSM3J66MFV,L3F
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-723
150°C
-
VESM
MOSFET (Metal Oxide)
-
800mA (Ta)
1V @ 1mA
U-MOSVI
20 V
1.2V, 4.5V
390mOhm @ 800mA, 4.5V
1.6 nC @ 4.5 V
+6V, -8V
100 pF @ 10 V
150mW (Ta)
-
SSM3J143TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Lead
150°C
-
UFM
MOSFET (Metal Oxide)
-
5.5A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
29.8mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
500mW (Ta)
-
SSM3J140TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Leads
150°C
-
UFM
MOSFET (Metal Oxide)
-
4.4A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
25.8mOhm @ 4A, 4.5V
24.8 nC @ 4.5 V
+6V, -8V
1800 pF @ 10 V
500mW (Ta)
-
SSM6J414TU,LF
1+
$0.1268
5+
$0.1197
10+
$0.1127
Quantity
1,375 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-SMD, Flat Leads
150°C (TJ)
-
UF6
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
22.5mOhm @ 6A, 4.5V
23.1 nC @ 4.5 V
±8V
1650 pF @ 10 V
1W (Ta)
-
SSM3K131TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
3-SMD, Flat Leads
150°C
-
UFM
MOSFET (Metal Oxide)
-
6A (Ta)
2.5V @ 1mA
U-MOSVI
30 V
4.5V, 10V
27.6mOhm @ 4A, 10V
10.1 nC @ 10 V
±20V
450 pF @ 15 V
500mW (Ta)
-
SSM3J144TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Lead
150°C
-
UFM
MOSFET (Metal Oxide)
-
3.2A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.7 nC @ 4.5 V
+6V, -8V
290 pF @ 10 V
500mW (Ta)
-
SSM6J422TU,LXHF
SMOS P-CH VDSS=-20V, VGSS=+6/-8V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-SMD, Flat Leads
150°C
Automotive
UF6
MOSFET (Metal Oxide)
-
4A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
42.7mOhm @ 3A, 4.5V
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
1W (Ta)
AEC-Q101
SSM3J134TU,LF
1+
$0.2028
5+
$0.1915
10+
$0.1803
Quantity
6,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Leads
150°C
-
UFM
MOSFET (Metal Oxide)
-
3.2A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
93mOhm @ 1.5A, 4.5V
4.7 nC @ 4.5 V
±8V
290 pF @ 10 V
500mW (Ta)
-
SSM6J503NU,LF
1+
$0.1394
5+
$0.1317
10+
$0.1239
Quantity
24,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-WDFN Exposed Pad
150°C (TJ)
-
6-UDFNB (2x2)
MOSFET (Metal Oxide)
-
6A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
32.4mOhm @ 3A, 4.5V
12.8 nC @ 10 V
±8V
840 pF @ 10 V
1W (Ta)
-
SSM3J168F,LXHF
SMOS LOW RON VDS:-60V VGSS:+10/-
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-236-3, SC-59, SOT-23-3
150°C
Automotive
S-Mini
MOSFET (Metal Oxide)
-
400mA (Ta)
2V @ 1mA
U-MOSVI
60 V
4V, 10V
1.55Ohm @ 200mA, 10V
3 nC @ 10 V
+10V, -20V
82 pF @ 10 V
600mW (Ta)
AEC-Q101
SSM3J375F,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-236-3, SC-59, SOT-23-3
150°C
Automotive
S-Mini
MOSFET (Metal Oxide)
-
2A (Ta)
1V @ 1mA
U-MOSVI
20 V
1.5V, 4.5V
150mOhm @ 1A, 4.5V
4.6 nC @ 4.5 V
+6V, -8V
270 pF @ 10 V
600mW (Ta)
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.