U-MOSVI Series, Single FETs, MOSFETs

Results:
113
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Operating Temperature
FET Type
Grade
Mounting Type
Qualification
FET Feature
Technology
Results remaining113
Applied Filters:
U-MOSVI
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyFET FeatureRds On (Max) @ Id, VgsSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
TPCA8109(TE12L1,V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
9mOhm @ 12A, 10V
U-MOSVI
24A (Ta)
4.5V, 10V
2V @ 500µA
56 nC @ 10 V
+20V, -25V
2400 pF @ 10 V
1.6W (Ta), 30W (Tc)
-
TPCC8104,L1Q(CM
1+
$0.2434
5+
$0.2299
10+
$0.2163
Quantity
50,969 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C
30 V
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
-
8.8mOhm @ 10A, 10V
U-MOSVI
20A (Ta)
4.5V, 10V
2V @ 500µA
58 nC @ 10 V
+20V, -25V
2260 pF @ 10 V
700mW (Ta), 27W (Tc)
-
TPCC8105,L1Q(CM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-VDFN Exposed Pad
150°C
30 V
-
8-TSON Advance (3.3x3.3)
MOSFET (Metal Oxide)
-
7.8mOhm @ 11.5A, 10V
U-MOSVI
23A (Ta)
4.5V, 10V
2V @ 500µA
76 nC @ 10 V
+20V, -25V
3240 pF @ 10 V
700mW (Ta), 30W (Tc)
-
TPCC8136.LQ
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C
20 V
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
-
16mOhm @ 9.4A, 4.5V
U-MOSVI
9.4A (Ta)
1.8V, 4.5V
1.2V @ 1mA
36 nC @ 5 V
±12V
2350 pF @ 10 V
700mW (Ta), 18W (Tc)
-
TPC6110(TE85L,F,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-6 Thin, TSOT-23-6
150°C (TJ)
30 V
-
VS-6 (2.9x2.8)
MOSFET (Metal Oxide)
-
56mOhm @ 2.2A, 10V
U-MOSVI
4.5A (Ta)
-
2V @ 100µA
14 nC @ 10 V
-
510 pF @ 10 V
700mW (Ta)
-
TPC6113(TE85L,F,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-6 Thin, TSOT-23-6
150°C (TJ)
20 V
-
VS-6 (2.9x2.8)
MOSFET (Metal Oxide)
-
55mOhm @ 2.5A, 4.5V
U-MOSVI
5A (Ta)
2.5V, 4.5V
1.2V @ 200µA
10 nC @ 5 V
±12V
690 pF @ 10 V
700mW (Ta)
-
TPC8126,LQ(CM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-SOIC (0.173", 4.40mm Width)
150°C (TJ)
30 V
-
8-SOP (5.5x6.0)
MOSFET (Metal Oxide)
-
10mOhm @ 5.5A, 10V
U-MOSVI
11A (Ta)
4.5V, 10V
2V @ 500µA
56 nC @ 10 V
+20V, -25V
2400 pF @ 10 V
1W (Ta)
-
TPCA8128,LQ(CM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C (TJ)
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
4.8mOhm @ 17A, 10V
U-MOSVI
34A (Ta)
4.5V, 10V
2V @ 500µA
115 nC @ 10 V
+20V, -25V
4800 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TPCA8120,LQ(CM
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C (TJ)
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
3mOhm @ 22.5A, 10V
U-MOSVI
45A (Ta)
4.5V, 10V
2V @ 1mA
190 nC @ 10 V
+20V, -25V
7420 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TPCC8104,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C
30 V
-
8-TSON Advance (3.1x3.1)
MOSFET (Metal Oxide)
-
8.8mOhm @ 10A, 10V
U-MOSVI
20A (Ta)
4.5V, 10V
2V @ 500µA
58 nC @ 10 V
+20V, -25V
2260 pF @ 10 V
700mW (Ta), 27W (Tc)
-
TPCA8128,L1Q
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
8-PowerVDFN
150°C
30 V
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
4.8mOhm @ 17A, 10V
U-MOSVI
34A (Ta)
4.5V, 10V
2V @ 500µA
115 nC @ 10 V
+20V, -25V
4800 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
SSM3J374R,LXHF
SMOS P-CH VDSS:-30V VGSS:-20/+10
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
150°C
30 V
Automotive
SOT-23F
MOSFET (Metal Oxide)
-
71mOhm @ 3A, 10V
U-MOSVI
4A (Ta)
4V, 10V
2V @ 100µA
5.9 nC @ 10 V
+10V, -20V
280 pF @ 15 V
1W (Ta)
AEC-Q101
SSM3J371R,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
150°C
20 V
Automotive
SOT-23F
MOSFET (Metal Oxide)
-
55mOhm @ 3A, 4.5V
U-MOSVI
4A (Ta)
1.5V, 4.5V
1V @ 1mA
10.4 nC @ 4.5 V
+6V, -8V
630 pF @ 10 V
1W (Ta)
AEC-Q101
SSM3J372R,LXHF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
SOT-23-3 Flat Leads
150°C
30 V
Automotive
SOT-23F
MOSFET (Metal Oxide)
-
42mOhm @ 5A, 10V
U-MOSVI
6A (Ta)
1.8V, 10V
1.2V @ 1mA
8.2 nC @ 4.5 V
+6V, -12V
560 pF @ 15 V
1W (Ta)
AEC-Q101
SSM6J424TU,LF
1+
$0.4590
5+
$0.4335
10+
$0.4080
Quantity
232 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-SMD, Flat Leads
150°C
20 V
-
UF6
MOSFET (Metal Oxide)
-
22.5mOhm @ 6A, 4.5V
U-MOSVI
6A (Ta)
1.5V, 4.5V
1V @ 1mA
23.1 nC @ 4.5 V
+6V, -8V
1650 pF @ 10 V
1W (Ta)
-
SSM6J502NU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-WDFN Exposed Pad
150°C (TJ)
20 V
-
6-UDFNB (2x2)
MOSFET (Metal Oxide)
-
23.1mOhm @ 4A, 4.5V
U-MOSVI
6A (Ta)
1.5V, 4.5V
1V @ 1mA
24.8 nC @ 4.5 V
±8V
1800 pF @ 10 V
1W (Ta)
-
SSM3J352F,LF
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-236-3, SC-59, SOT-23-3
150°C
20 V
-
S-Mini
MOSFET (Metal Oxide)
-
110mOhm @ 2A, 10V
U-MOSVI
2A (Ta)
1.8V, 10V
1.2V @ 1mA
5.1 nC @ 4.5 V
±12V
210 pF @ 10 V
1.2W (Ta)
-
SSM6J801R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
6-SMD, Flat Leads
150°C (TJ)
20 V
-
6-TSOP-F
MOSFET (Metal Oxide)
-
32.5mOhm @ 3A, 4.5V
U-MOSVI
6A (Ta)
1.5V, 4.5V
1V @ 1mA
12.8 nC @ 4.5 V
+6V, -8V
840 pF @ 10 V
1.5W (Ta)
-
SSM3J135TU,LF
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
3-SMD, Flat Leads
150°C
20 V
-
UFM
MOSFET (Metal Oxide)
-
103mOhm @ 1A, 4.5V
U-MOSVI
3A (Ta)
1.5V, 4.5V
1V @ 1mA
4.6 nC @ 4.5 V
±8V
270 pF @ 10 V
500mW (Ta)
-
TJ9A10M3,S4Q
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
P-Channel
TO-220-3 Full Pack
150°C
100 V
-
TO-220SIS
MOSFET (Metal Oxide)
-
170mOhm @ 4.5A, 10V
U-MOSVI
9A (Ta)
10V
4V @ 1mA
47 nC @ 10 V
±20V
2900 pF @ 10 V
19W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.