U-MOSIV Series, Single FETs, MOSFETs

Results:
35
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Vgs(th) (Max) @ Id
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Drain to Source Voltage (Vdss)
Vgs (Max)
Operating Temperature
FET Type
Mounting Type
Technology
FET Feature
Grade
Qualification
Results remaining35
Applied Filters:
U-MOSIV
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SSM3K337R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
SOT-23-3 Flat Leads
-
SOT-23F
MOSFET (Metal Oxide)
-
2A (Ta)
U-MOSIV
38 V
4V, 10V
150mOhm @ 2A, 10V
1.7V @ 1mA
3 nC @ 10 V
±20V
120 pF @ 10 V
1W (Ta)
-
TPCA8026(TE12L,Q,M
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-PowerVDFN
-
8-SOP Advance (5x5)
MOSFET (Metal Oxide)
-
45A (Ta)
U-MOSIV
30 V
4.5V, 10V
2.2mOhm @ 23A, 10V
2.5V @ 1mA
113 nC @ 10 V
±20V
4200 pF @ 10 V
1.6W (Ta), 45W (Tc)
-
TK8S06K3L(T6L1,NQ)
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
12,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK+
MOSFET (Metal Oxide)
-
8A (Ta)
U-MOSIV
60 V
6V, 10V
54mOhm @ 4A, 10V
3V @ 1mA
10 nC @ 10 V
±20V
400 pF @ 10 V
25W (Tc)
-
SSM3H137TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
3-SMD, Flat Leads
-
UFM
MOSFET (Metal Oxide)
-
2A (Ta)
U-MOSIV
34 V
4V, 10V
240mOhm @ 1A, 10V
1.7V @ 1mA
3 nC @ 10 V
±20V
119 pF @ 10 V
800mW (Ta)
-
TK35S04K3L(T6L1,NQ
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK+
MOSFET (Metal Oxide)
-
35A (Ta)
U-MOSIV
40 V
6V, 10V
10.3mOhm @ 17.5A, 10V
3V @ 1mA
28 nC @ 10 V
±20V
1370 pF @ 10 V
58W (Tc)
-
SSM3K347R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C
SOT-23-3 Flat Leads
-
SOT-23F
MOSFET (Metal Oxide)
-
2A (Ta)
U-MOSIV
38 V
4V, 10V
340mOhm @ 1A, 10V
2.4V @ 1mA
2.5 nC @ 10 V
±20V
86 pF @ 10 V
2W (Ta)
-
SSM3K315T(TE85L,F)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-236-3, SC-59, SOT-23-3
-
TSM
MOSFET (Metal Oxide)
-
6A (Ta)
U-MOSIV
30 V
4.5V, 10V
27.6mOhm @ 4A, 10V
2.5V @ 1mA
10.1 nC @ 10 V
±20V
450 pF @ 15 V
700mW (Ta)
-
TPCC8008(TE12L,QM)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-VDFN Exposed Pad
-
8-TSON Advance (3.3x3.3)
MOSFET (Metal Oxide)
-
25A (Ta)
U-MOSIV
30 V
4.5V, 10V
6.8mOhm @ 12.5A, 10V
2.5V @ 1A
30 nC @ 10 V
±25V
1600 pF @ 10 V
700mW (Ta), 30W (Tc)
-
TPCP8004(TE85L,F)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-SMD, Flat Lead
-
PS-8 (2.9x2.4)
MOSFET (Metal Oxide)
-
8.3A (Ta)
U-MOSIV
30 V
4.5V, 10V
8.5mOhm @ 4.2A, 10V
2.5V @ 1mA
26 nC @ 10 V
±20V
1270 pF @ 10 V
840mW (Ta)
-
SSM3J120TU,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
3-SMD, Flat Leads
-
UFM
MOSFET (Metal Oxide)
-
4A (Ta)
U-MOSIV
20 V
1.5V, 4V
38mOhm @ 3A, 4V
1V @ 1mA
22.3 nC @ 4 V
±8V
1484 pF @ 10 V
500mW (Ta)
-
TPC6107(TE85L,F,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
SOT-23-6 Thin, TSOT-23-6
-
VS-6 (2.9x2.8)
MOSFET (Metal Oxide)
-
4.5A (Ta)
U-MOSIV
20 V
2V, 4.5V
55mOhm @ 2.2A, 4.5V
1.2V @ 200µA
9.8 nC @ 5 V
±12V
680 pF @ 10 V
700mW (Ta)
-
TPC8042(TE12L,Q,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
8-SOIC (0.173", 4.40mm Width)
-
8-SOP (5.5x6.0)
MOSFET (Metal Oxide)
-
18A (Ta)
U-MOSIV
30 V
4.5V, 10V
3.4mOhm @ 9A, 10V
2.5V @ 1mA
56 nC @ 10 V
±20V
2900 pF @ 10 V
1W (Ta)
-
TPC8115(TE12L,Q,M)
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
150°C (TJ)
8-SOIC (0.173", 4.40mm Width)
-
8-SOP (5.5x6.0)
MOSFET (Metal Oxide)
-
10A (Ta)
U-MOSIV
20 V
1.8V, 4.5V
10mOhm @ 5A, 4.5V
1.2V @ 200µA
115 nC @ 5 V
±8V
9130 pF @ 10 V
1W (Ta)
-
SSM3K318R,LF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
SOT-23-3 Flat Leads
-
SOT-23F
MOSFET (Metal Oxide)
-
2.5A (Ta)
U-MOSIV
60 V
4.5V, 10V
107mOhm @ 2A, 10V
2.8V @ 1mA
7 nC @ 10 V
±20V
235 pF @ 30 V
1W (Ta)
-
TK60S06K3L(T6L1,NQ
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
175°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
-
DPAK+
MOSFET (Metal Oxide)
-
60A (Ta)
U-MOSIV
60 V
6V, 10V
8mOhm @ 30A, 10V
3V @ 1mA
60 nC @ 10 V
±20V
2900 pF @ 10 V
88W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.