TrenchT2™ Series, Single FETs, MOSFETs

Results:
72
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining72
Applied Filters:
TrenchT2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeDrain to Source Voltage (Vdss)Operating TemperatureGradePackage / CaseTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Supplier Device PackageQualification
IXTK600N04T2
MOSFET N-CH 40V 600A TO264
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
TO-264-3, TO-264AA
MOSFET (Metal Oxide)
-
600A (Tc)
3.5V @ 250µA
TrenchT2™
10V
1.5mOhm @ 100A, 10V
590 nC @ 10 V
±20V
40000 pF @ 25 V
1250W (Tc)
TO-264 (IXTK)
-
IXTA300N04T2
MOSFET N-CH 40V 300A TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
300A (Tc)
4V @ 250µA
TrenchT2™
10V
2.5mOhm @ 500mA, 10V
145 nC @ 10 V
±20V
10700 pF @ 25 V
480W (Tc)
TO-263AA
-
IXTA300N04T2-7
MOSFET N-CH 40V 300A TO263-7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
TO-263-7, D²Pak (6 Leads + Tab)
MOSFET (Metal Oxide)
-
300A (Tc)
4V @ 250µA
TrenchT2™
10V
2.5mOhm @ 50A, 10V
145 nC @ 10 V
±20V
10700 pF @ 25 V
480W (Tc)
TO-263-7 (IXTA)
-
IXTA260N055T2-7
MOSFET N-CH 55V 260A TO263-7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
55 V
-55°C ~ 175°C (TJ)
-
TO-263-7, D²Pak (6 Leads + Tab)
MOSFET (Metal Oxide)
-
260A (Tc)
4V @ 250µA
TrenchT2™
10V
3.3mOhm @ 50A, 10V
140 nC @ 10 V
±20V
10800 pF @ 25 V
480W (Tc)
TO-263-7 (IXTA)
-
IXTA140N12T2
MOSFET N-CH 120V 140A TO263
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
120 V
-55°C ~ 175°C (TJ)
-
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
MOSFET (Metal Oxide)
-
140A (Tc)
4.5V @ 250µA
TrenchT2™
10V
10mOhm @ 70A, 10V
174 nC @ 10 V
±20V
9700 pF @ 25 V
577W (Tc)
TO-263AA
-
IXTA220N04T2-7
MOSFET N-CH 40V 220A TO263-7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
TO-263-7, D²Pak (6 Leads + Tab)
MOSFET (Metal Oxide)
-
220A (Tc)
4V @ 250µA
TrenchT2™
10V
3.5mOhm @ 50A, 10V
112 nC @ 10 V
±20V
6820 pF @ 25 V
360W (Tc)
TO-263-7 (IXTA)
-
IXTA230N075T2-7
MOSFET N-CH 75V 230A TO263-7
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
75 V
-55°C ~ 175°C (TJ)
-
TO-263-7, D²Pak (6 Leads + Tab)
MOSFET (Metal Oxide)
-
230A (Tc)
4V @ 250µA
TrenchT2™
10V
4.2mOhm @ 50A, 10V
178 nC @ 10 V
±20V
10500 pF @ 25 V
480W (Tc)
TO-263-7 (IXTA)
-
IXTH300N04T2
MOSFET N-CH 40V 300A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
TO-247-3
MOSFET (Metal Oxide)
-
300A (Tc)
4V @ 250µA
TrenchT2™
10V
2.5mOhm @ 50A, 10V
145 nC @ 10 V
±20V
10700 pF @ 25 V
480W (Tc)
TO-247 (IXTH)
-
IXTH360N055T2
MOSFET N-CH 55V 360A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
55 V
-55°C ~ 175°C (TJ)
-
TO-247-3
MOSFET (Metal Oxide)
-
360A (Tc)
4V @ 250µA
TrenchT2™
10V
2.4mOhm @ 100A, 10V
330 nC @ 10 V
±20V
20000 pF @ 25 V
935W (Tc)
TO-247 (IXTH)
-
IXTH440N055T2
MOSFET N-CH 55V 440A TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
55 V
-55°C ~ 175°C (TJ)
-
TO-247-3
MOSFET (Metal Oxide)
-
440A (Tc)
4V @ 250µA
TrenchT2™
10V
1.8mOhm @ 100A, 10V
405 nC @ 10 V
±20V
25000 pF @ 25 V
1000W (Tc)
TO-247 (IXTH)
-
IXTT440N055T2
MOSFET N-CH 55V 440A TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
55 V
-55°C ~ 175°C (TJ)
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
-
440A (Tc)
4V @ 250µA
TrenchT2™
10V
1.8mOhm @ 100A, 10V
405 nC @ 10 V
±20V
25000 pF @ 25 V
1000W (Tc)
TO-268AA
-
IXTT500N04T2
MOSFET N-CH 40V 500A TO268
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
40 V
-55°C ~ 175°C (TJ)
-
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
MOSFET (Metal Oxide)
-
500A (Tc)
3.5V @ 250µA
TrenchT2™
10V
1.6mOhm @ 100A, 10V
405 nC @ 10 V
±20V
25000 pF @ 25 V
1000W (Tc)
TO-268AA
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.