TrenchT2™ Series, Single FETs, MOSFETs

Results:
72
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining72
Applied Filters:
TrenchT2™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseSupplier Device PackageFET TypeOperating TemperatureGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IXTP230N075T2
MOSFET N-CH 75V 230A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
230A (Tc)
10V
4.2mOhm @ 50A, 10V
178 nC @ 10 V
±20V
10500 pF @ 25 V
480W (Tc)
-
IXTP90N075T2
MOSFET N-CH 75V 90A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
90A (Tc)
10V
10mOhm @ 25A, 10V
54 nC @ 10 V
±20V
3290 pF @ 25 V
180W (Tc)
-
IXTA220N04T2
MOSFET N-CH 40V 220A TO-263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
220A (Tc)
-
3.5mOhm @ 50A, 10V
112 nC @ 10 V
-
6820 pF @ 25 V
360W (Tc)
-
IXTP200N055T2
MOSFET N-CH 55V 200A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
200A (Tc)
10V
4.2mOhm @ 50A, 10V
109 nC @ 10 V
±20V
6800 pF @ 25 V
360W (Tc)
-
IXTP140N12T2
MOSFET N-CH 120V 140A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4.5V @ 250µA
TrenchT2™
120 V
140A (Tc)
10V
10mOhm @ 70A, 10V
174 nC @ 10 V
±20V
9700 pF @ 25 V
577W (Tc)
-
IXTT360N055T2
MOSFET N-CH 55V 360A TO268
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
TO-268AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
360A (Tc)
10V
2.4mOhm @ 100A, 10V
330 nC @ 10 V
±20V
20000 pF @ 25 V
935W (Tc)
-
IXTP80N12T2
MOSFET N-CH 120V 80A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4.5V @ 100µA
TrenchT2™
120 V
80A (Tc)
10V
17mOhm @ 40A, 10V
80 nC @ 10 V
±20V
4740 pF @ 25 V
325W (Tc)
-
IXTA230N075T2
MOSFET N-CH 75V 230A TO263
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
378 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
230A (Tc)
10V
4.2mOhm @ 50A, 10V
178 nC @ 10 V
±20V
10500 pF @ 25 V
480W (Tc)
-
IXTP90N055T2
MOSFET N-CH 55V 90A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
90A (Tc)
10V
8.4mOhm @ 25A, 10V
42 nC @ 10 V
±20V
2770 pF @ 25 V
150W (Tc)
-
IXTH500N04T2
MOSFET N-CH 40V 500A TO247
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
30 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
TO-247 (IXTH)
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
3.5V @ 250µA
TrenchT2™
40 V
500A (Tc)
10V
1.6mOhm @ 100A, 10V
405 nC @ 10 V
±20V
25000 pF @ 25 V
1000W (Tc)
-
IXTZ550N055T2
MOSFET N-CH 55V 550A DE475
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
6-SMD, Flat Leads
DE475
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
550A (Tc)
10V
1mOhm @ 100A, 10V
595 nC @ 10 V
±20V
40000 pF @ 25 V
600W (Tc)
-
IXTY90N055T2-TRL
MOSFET N-CH 55V 90A TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
90A (Tc)
10V
8.4mOhm @ 25A, 10V
42 nC @ 10 V
±20V
2770 pF @ 25 V
150W (Tc)
-
IXTA110N055T2-TRL
MOSFET N-CH 55V 110A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
110A (Tc)
10V
6.6mOhm @ 25A, 10V
57 nC @ 10 V
±20V
3060 pF @ 25 V
180W (Tc)
-
IXTA70N075T2-TRL
MOSFET N-CH 75V 70A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
70A (Tc)
10V
12mOhm @ 25A, 10V
46 nC @ 10 V
±20V
2725 pF @ 25 V
150W (Tc)
-
IXTA100N04T2-TRL
MOSFET N-CH 40V 100A TO263
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
100A (Tc)
10V
7mOhm @ 25A, 10V
25.5 nC @ 10 V
±20V
2690 pF @ 25 V
150W (Tc)
-
IXTA80N12T2
MOSFET N-CH 120V 80A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
120 V
80A (Tc)
10V
17mOhm @ 40A, 10V
80 nC @ 10 V
±20V
4740 pF @ 25 V
325W (Tc)
-
IXTA160N04T2
MOSFET N-CH 40V 160A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
40 V
160A (Tc)
10V
5mOhm @ 50A, 10V
79 nC @ 10 V
±20V
4640 pF @ 25 V
250W (Tc)
-
IXTA260N055T2
MOSFET N-CH 55V 260A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
260A (Tc)
10V
3.3mOhm @ 50A, 10V
140 nC @ 10 V
±20V
10800 pF @ 25 V
480W (Tc)
-
IXTP140N055T2
MOSFET N-CH 55V 140A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
55 V
140A (Tc)
10V
5.4mOhm @ 50A, 10V
82 nC @ 10 V
±20V
4760 pF @ 25 V
250W (Tc)
-
IXTA90N075T2
MOSFET N-CH 75V 90A TO263
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
6,200 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263AA
N-Channel
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
-
4V @ 250µA
TrenchT2™
75 V
90A (Tc)
10V
10mOhm @ 25A, 10V
54 nC @ 10 V
±20V
3290 pF @ 25 V
180W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.