ThunderFET® Series, Single FETs, MOSFETs

Results:
50
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Vgs (Max)
Results remaining50
Applied Filters:
ThunderFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SUD90330E-BE3
MOSFET N-CH 200V 35.8A TO252AA
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
35.8A (Tc)
7.5V, 10V
37.5mOhm @ 12.2A, 10V
32 nC @ 10 V
±20V
1172 pF @ 100 V
125W (Tc)
-
SIR690DP-T1-GE3
MOSFET N-CH 200V 34.4A PPAK SO-8
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
5,366 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
34.4A (Tc)
7.5V, 10V
35mOhm @ 20A, 10V
37 nC @ 7.5 V
±20V
1935 pF @ 100 V
104W (Tc)
-
SUM70060E-GE3
MOSFET N-CH 100V 131A TO263
1+
$22.8169
5+
$21.5493
10+
$20.2817
Quantity
1,976 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
100 V
131A (Tc)
7.5V, 10V
5.6mOhm @ 30A, 10V
81 nC @ 10 V
±20V
3330 pF @ 50 V
375W (Tc)
-
SUM70090E-GE3
MOSFET N-CH 100V 50A TO263
1+
$4.0563
5+
$3.8310
10+
$3.6056
Quantity
864 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
100 V
50A (Tc)
7.5V, 10V
8.9mOhm @ 20A, 10V
50 nC @ 10 V
±20V
1950 pF @ 50 V
125W (Tc)
-
SIR616DP-T1-GE3
MOSFET N-CH 200V 20.2A PPAK SO-8
1+
$20.2817
5+
$19.1549
10+
$18.0282
Quantity
6,020 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
20.2A (Tc)
7.5V, 10V
50.5mOhm @ 10A, 10V
28 nC @ 7.5 V
±20V
1450 pF @ 100 V
52W (Tc)
-
SIR622DP-T1-GE3
MOSFET N-CH 150V 51.6A PPAK SO-8
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4.5V @ 250µA
ThunderFET®
150 V
51.6A (Tc)
7.5V, 10V
17.7mOhm @ 20A, 10V
31 nC @ 7.5 V
±20V
1516 pF @ 75 V
104W (Tc)
-
SUP70090E-GE3
MOSFET N-CH 100V 50A TO220AB
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
992 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
100 V
50A (Tc)
7.5V, 10V
8.9mOhm @ 20A, 10V
50 nC @ 10 V
±20V
1950 pF @ 50 V
125W (Tc)
-
SIR690DP-T1-RE3
MOSFET N-CH 200V 34.4A PPAK SO-8
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
34.4A (Tc)
7.5V, 10V
35mOhm @ 20A, 10V
48 nC @ 10 V
±20V
1935 pF @ 100 V
104W (Tc)
-
SISS40DN-T1-GE3
MOSFET N-CH 100V 36.5A PPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® 1212-8S
-55°C ~ 150°C (TJ)
-
PowerPAK® 1212-8S
MOSFET (Metal Oxide)
-
3.5V @ 250µA
ThunderFET®
100 V
36.5A (Tc)
6V, 10V
21mOhm @ 10A, 10V
24 nC @ 10 V
±20V
845 pF @ 50 V
3.7W (Ta), 52W (Tc)
-
SQD50P04-09L_T4GE3
MOSFET P-CH 40V 50A TO252AA
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
2.5V @ 250µA
ThunderFET®
40 V
50A (Tc)
4.5V, 10V
9.4mOhm @ 17A, 10V
155 nC @ 10 V
±20V
6675 pF @ 20 V
136W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.