ThunderFET® Series, Single FETs, MOSFETs

Results:
50
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Vgs (Max)
Results remaining50
Applied Filters:
ThunderFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SUG90090E-GE3
MOSFET N-CH 200V 100A TO247AC
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
520 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 175°C (TJ)
-
TO-247AC
MOSFET (Metal Oxide)
-
100A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
9.5mOhm @ 20A, 10V
129 nC @ 10 V
±20V
5220 pF @ 100 V
395W (Tc)
-
SUD90330E-GE3
MOSFET N-CH 200V 35.8A TO252AA
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
35.8A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
37.5mOhm @ 12.2A, 10V
32 nC @ 10 V
±20V
1172 pF @ 100 V
125W (Tc)
-
SIJ470DP-T1-GE3
MOSFET N-CH 100V 58.8A PPAK SO-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
58.8A (Tc)
3.5V @ 250µA
ThunderFET®
100 V
7.5V, 10V
9.1mOhm @ 20A, 10V
56 nC @ 10 V
±20V
2050 pF @ 50 V
5W (Ta), 56.8W (Tc)
-
SUM40010EL-GE3
MOSFET N-CH 40V 120A D2PAK
1+
$54.5070
5+
$51.4789
10+
$48.4507
Quantity
8,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
120A (Tc)
2.5V @ 250µA
ThunderFET®
40 V
4.5V, 10V
1.6mOhm @ 30A, 10V
230 nC @ 10 V
±20V
11155 pF @ 30 V
375W (Tc)
-
SUP10250E-GE3
MOSFET N-CH 250V 63A TO220AB
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
76 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220AB
MOSFET (Metal Oxide)
-
63A (Tc)
4V @ 250µA
ThunderFET®
250 V
7.5V, 10V
-
88 nC @ 10 V
±20V
-
375W (Tc)
-
SUP90330E-GE3
MOSFET N-CH 200V 35.8A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 175°C (TJ)
-
TO-220AB
MOSFET (Metal Oxide)
-
35.8A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
37.5mOhm @ 12.2A, 10V
32 nC @ 10 V
±20V
1172 pF @ 100 V
125W (Tc)
-
SUM10250E-GE3
MOSFET N-CH 250V 63.5A D2PAK
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
1,050 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
63.5A (Tc)
4V @ 250µA
ThunderFET®
250 V
7.5V, 10V
31mOhm @ 30A, 10V
88 nC @ 10 V
±20V
3002 pF @ 125 V
375W (Tc)
-
SIR618DP-T1-GE3
MOSFET N-CH 200V 14.2A PPAK SO-8
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
2,350 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
14.2A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
95mOhm @ 8A, 10V
16 nC @ 7.5 V
±20V
740 pF @ 100 V
48W (Tc)
-
SIR624DP-T1-RE3
MOSFET N-CH 200V 5.7A/18.6A PPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
5.7A (Ta), 18.6A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
60mOhm @ 10A, 10V
30 nC @ 10 V
±20V
1110 pF @ 100 V
5W (Ta), 52W (Tc)
-
SUM80090E-GE3
MOSFET N-CH 150V 128A D2PAK
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-55°C ~ 175°C (TJ)
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
128A (Tc)
5V @ 250µA
ThunderFET®
150 V
7.5V, 10V
9mOhm @ 30A, 10V
95 nC @ 10 V
±20V
3425 pF @ 75 V
375W (Tc)
-
SISS98DN-T1-GE3
MOSFET N-CH 200V 14.1A PPAK
1+
$35.4930
5+
$33.5211
10+
$31.5493
Quantity
2,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® 1212-8
-55°C ~ 150°C (TJ)
-
PowerPAK® 1212-8
MOSFET (Metal Oxide)
-
14.1A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
105mOhm @ 7A, 10V
14 nC @ 7.5 V
±20V
608 pF @ 100 V
57W (Tc)
-
SIR624DP-T1-GE3
MOSFET N-CH 200V 18.6A PPAK SO-8
1+
$9.1268
5+
$8.6197
10+
$8.1127
Quantity
69,672 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
18.6A (Tc)
4V @ 250µA
ThunderFET®
200 V
7.5V, 10V
60mOhm @ 10A, 10V
23 nC @ 7.5 V
±20V
1110 pF @ 100 V
52W (Tc)
-
SIR632DP-T1-RE3
MOSFET N-CH 150V 29A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
29A (Tc)
4V @ 250µA
ThunderFET®
150 V
7.5V, 10V
34.5mOhm @ 10A, 10V
17 nC @ 7.5 V
±20V
740 pF @ 75 V
69.5W (Tc)
-
SIR622DP-T1-RE3
MOSFET N-CH 150V 12.6A PPAK
1+
$2.0282
5+
$1.9155
10+
$1.8028
Quantity
14,450 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
12.6A (Ta), 51.6A (Tc)
4.5V @ 250µA
ThunderFET®
150 V
7.5V, 10V
17.7mOhm @ 20A, 10V
41 nC @ 10 V
±20V
1516 pF @ 75 V
6.25W (Ta), 104W (Tc)
-
SIR696DP-T1-GE3
MOSFET N-CH 125V 60A PPAK SO-8
1+
$4.5634
5+
$4.3099
10+
$4.0563
Quantity
24,564 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SO-8
-55°C ~ 150°C (TJ)
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
60A (Tc)
4.5V @ 250µA
ThunderFET®
125 V
7.5V, 10V
11.5mOhm @ 20A, 10V
38 nC @ 10 V
±20V
1410 pF @ 75 V
104W (Tc)
-
SI4434ADY-T1-GE3
MOSFET N-CH 250V 2.8A/4.1A 8SO
1+
$53.2394
5+
$50.2817
10+
$47.3239
Quantity
7,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-SOIC (0.154", 3.90mm Width)
-55°C ~ 150°C (TJ)
-
8-SO
MOSFET (Metal Oxide)
-
2.8A (Ta), 4.1A (Tc)
4V @ 250µA
ThunderFET®
250 V
7.5V, 10V
150mOhm @ 2.8A, 10V
16.5 nC @ 10 V
±20V
600 pF @ 125 V
2.9W (Ta), 6W (Tc)
-
SIA446DJ-T1-GE3
MOSFET N-CH 150V 7.7A PPAK SC70
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® SC-70-6
-55°C ~ 150°C (TJ)
-
PowerPAK® SC-70-6
MOSFET (Metal Oxide)
-
7.7A (Tc)
3.5V @ 250µA
ThunderFET®
150 V
6V, 10V
177mOhm @ 3A, 10V
8 nC @ 10 V
±20V
230 pF @ 75 V
3.5W (Ta), 19W (Tc)
-
SI7322ADN-T1-GE3
MOSFET N-CH 100V 15.1A PPAK
1+
$1.7746
5+
$1.6761
10+
$1.5775
Quantity
13,560 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
PowerPAK® 1212-8
-55°C ~ 150°C (TJ)
-
PowerPAK® 1212-8
MOSFET (Metal Oxide)
-
15.1A (Tc)
4V @ 250µA
ThunderFET®
100 V
10V
57mOhm @ 5.5A, 10V
13 nC @ 10 V
±20V
360 pF @ 50 V
26W (Tc)
-
SUD80460E-GE3
MOSFET N-CH 150V 42A TO252AA
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
5,937 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 175°C (TJ)
-
TO-252AA
MOSFET (Metal Oxide)
-
42A (Tc)
4V @ 250µA
ThunderFET®
150 V
10V
44.7mOhm @ 8.3A, 10V
16 nC @ 10 V
±20V
560 pF @ 50 V
65.2W (Tc)
-
SISS71DN-T1-GE3
MOSFET P-CH 100V 23A PPAK1212-8S
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
11,750 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
PowerPAK® 1212-8S
-55°C ~ 150°C (TJ)
-
PowerPAK® 1212-8S
MOSFET (Metal Oxide)
-
23A (Tc)
2.5V @ 250µA
ThunderFET®
100 V
4.5V, 10V
59mOhm @ 5A, 10V
15 nC @ 4.5 V
±20V
1050 pF @ 50 V
57W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.