ThunderFET® Series, Single FETs, MOSFETs

Results:
50
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
FET Type
Mounting Type
FET Feature
Grade
Qualification
Technology
Vgs (Max)
Results remaining50
Applied Filters:
ThunderFET®
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseGradeSupplier Device PackageTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
SUA70090E-E3
MOSFET N-CH 100V 42.8A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
-
TO-220 Full Pack
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
100 V
42.8A (Tc)
7.5V, 10V
9.3mOhm @ 20A, 10V
50 nC @ 10 V
±20V
1950 pF @ 50 V
35.7W (Tc)
-
SUP40010EL-GE3
MOSFET N-CH 40V 120A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
2.5V @ 250µA
ThunderFET®
40 V
120A (Tc)
4.5V, 10V
1.8mOhm @ 30A, 10V
230 nC @ 10 V
±20V
11155 pF @ 30 V
375W (Tc)
-
SI7190ADP-T1-RE3
MOSFET N-CH 250V 4.3A/14.4A PPAK
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
4,779 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerPAK® SO-8
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
250 V
4.3A (Ta), 14.4A (Tc)
7.5V, 10V
102mOhm @ 4.3A, 10V
22.4 nC @ 10 V
±20V
860 pF @ 100 V
5W (Ta), 56.8W (Tc)
-
SIS888DN-T1-GE3
MOSFET N-CH 150V 20.2A PPAK
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TA)
N-Channel
PowerPAK® 1212-8S
-
PowerPAK® 1212-8S
MOSFET (Metal Oxide)
-
4.2V @ 250µA
ThunderFET®
150 V
20.2A (Tc)
7.5V, 10V
58mOhm @ 10A, 10V
14.5 nC @ 10 V
±20V
420 pF @ 75 V
52W (Tc)
-
SI7434ADP-T1-RE3
MOSFET N-CH 250V 3.7A/12.3A PPAK
1+
$35.4930
5+
$33.5211
10+
$31.5493
Quantity
13,340 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerPAK® SO-8
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
250 V
3.7A (Ta), 12.3A (Tc)
7.5V, 10V
150mOhm @ 3.7A, 10V
16.5 nC @ 10 V
±20V
600 pF @ 125 V
5W (Ta), 54.3W (Tc)
-
SUM90330E-GE3
MOSFET N-CH 200V 35.1A TO263
1+
$38.0282
5+
$35.9155
10+
$33.8028
Quantity
2,240 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
35.1A (Tc)
7.5V, 10V
37.5mOhm @ 12.2A, 10V
32 nC @ 10 V
±20V
1172 pF @ 100 V
125W (Tc)
-
SUM90140E-GE3
MOSFET N-CH 200V 90A D2PAK
1+
$3.0930
5+
$2.9211
10+
$2.7493
Quantity
2,576 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
90A (Tc)
7.5V, 10V
17mOhm @ 30A, 10V
96 nC @ 10 V
±20V
4132 pF @ 100 V
375W (Tc)
-
SUP90220E-GE3
MOSFET N-CH 200V 64A TO220AB
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
20 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
64A (Tc)
7.5V, 10V
-
48 nC @ 10 V
±20V
1950 pF @ 100 V
230W (Tc)
-
SUD80460E-BE3
MOSFET N-CH 150V 42A TO252AA
1+
$1.3944
5+
$1.3169
10+
$1.2394
Quantity
3,990 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
150 V
42A (Tc)
10V
44.7mOhm @ 8.3A, 10V
16 nC @ 10 V
±20V
560 pF @ 50 V
65.2W (Tc)
-
SUD70090E-GE3
MOSFET N-CH 100V 50A TO252
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-
TO-252AA
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
100 V
50A (Tc)
7.5V, 10V
8.9mOhm @ 20A, 10V
50 nC @ 10 V
±20V
1950 pF @ 50 V
125W (Tc)
-
SUM90220E-GE3
MOSFET N-CH 200V 64A D2PAK
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
56 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
64A (Tc)
7.5V, 10V
21.6mOhm @ 15A, 10V
48 nC @ 10 V
±20V
1950 pF @ 100 V
230W (Tc)
-
SUP70060E-GE3
MOSFET N-CH 100V 131A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
100 V
131A (Tc)
7.5V, 10V
5.8mOhm @ 30A, 10V
81 nC @ 10 V
±20V
3330 pF @ 50 V
200W (Tc)
-
SUP90140E-GE3
MOSFET N-CH 200V 90A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
90A (Tc)
7.5V, 10V
17mOhm @ 30A, 10V
96 nC @ 10 V
±20V
4132 pF @ 100 V
375W (Tc)
-
SUP80090E-GE3
MOSFET N-CH 150V 128A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
5V @ 250µA
ThunderFET®
150 V
128A (Tc)
7.5V, 10V
9.4mOhm @ 30A, 10V
95 nC @ 10 V
±20V
3425 pF @ 75 V
375W (Tc)
-
SUG80050E-GE3
MOSFET N-CH 150V 100A TO247AC
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-247-3
-
TO-247AC
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
150 V
100A (Tc)
7.5V, 10V
5.4mOhm @ 20A, 10V
165 nC @ 10 V
±20V
6250 pF @ 75 V
500W (Tc)
-
SIJ494DP-T1-GE3
MOSFET N-CH 150V 36.8A PPAK SO-8
1+
$8.1127
5+
$7.6620
10+
$7.2113
Quantity
5,720 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerPAK® SO-8
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4.5V @ 250µA
ThunderFET®
150 V
36.8A (Tc)
7.5V, 10V
23.2mOhm @ 15A, 10V
31 nC @ 10 V
±20V
1070 pF @ 75 V
69.4W (Tc)
-
SIR692DP-T1-RE3
MOSFET N-CH 250V 24.2A PPAK SO-8
1+
$39.2958
5+
$37.1127
10+
$34.9296
Quantity
6,982 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerPAK® SO-8
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
250 V
24.2A (Tc)
7.5V, 10V
63mOhm @ 10A, 10V
30 nC @ 7.5 V
±20V
1405 pF @ 125 V
104W (Tc)
-
SIR610DP-T1-RE3
MOSFET N-CH 200V 35.4A PPAK SO-8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
PowerPAK® SO-8
-
PowerPAK® SO-8
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
35.4A (Tc)
7.5V, 10V
31.9mOhm @ 10A, 10V
38 nC @ 10 V
±20V
1380 pF @ 100 V
104W (Tc)
-
SUM90142E-GE3
MOSFET N-CH 200V 90A TO263
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 175°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
90A (Tc)
7.5V, 10V
15mOhm @ 30A, 10V
87 nC @ 10 V
±20V
3120 pF @ 100 V
375W (Tc)
-
SUP90142E-GE3
MOSFET N-CH 200V 90A TO220AB
1+
$2.7887
5+
$2.6338
10+
$2.4789
Quantity
20,925 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
N-Channel
TO-220-3
-
TO-220AB
MOSFET (Metal Oxide)
-
4V @ 250µA
ThunderFET®
200 V
90A (Tc)
7.5V, 10V
15.2mOhm @ 30A, 10V
87 nC @ 10 V
±20V
31200 pF @ 100 V
375W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.