SuperFET™ Series, Single FETs, MOSFETs

Results:
70
Manufacturer
Series
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Supplier Device Package
Package / Case
Current - Continuous Drain (Id) @ 25°C
Operating Temperature
Grade
Mounting Type
Vgs(th) (Max) @ Id
Drain to Source Voltage (Vdss)
Qualification
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Technology
Results remaining70
Applied Filters:
SuperFET™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCP11N60
MOSFET N-CH 600V 11A TO220-3
1+
$0.7099
5+
$0.6704
10+
$0.6310
Quantity
140 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
125W (Tc)
-
FCB20N60TM
MOSFET N-CH 600V 20A D2PAK
Contact us
Quantity
1 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
N-Channel
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
208W (Tc)
-
FCP16N60
MOSFET N-CH 600V 16A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
16A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
260mOhm @ 8A, 10V
70 nC @ 10 V
±30V
2250 pF @ 25 V
167W (Tc)
-
FCP20N60
MOSFET N-CH 600V 20A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
208W (Tc)
-
FCPF20N60ST
MOSFET N-CH 600V 20A TO-220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-
TO-220-3 Full Pack
TO-220F-3
N-Channel
-
MOSFET (Metal Oxide)
-
20A (Tc)
-
SuperFET™
600 V
-
-
-
-
-
-
-
FCB11N60FTM
MOSFET N-CH 600V 11A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
N-Channel
-
MOSFET (Metal Oxide)
-
11A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
380mOhm @ 5.5A, 10V
52 nC @ 10 V
±30V
1490 pF @ 25 V
125W (Tc)
-
FCD5N60TF
MOSFET N-CH 600V 4.6A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
-
4.6A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
950mOhm @ 2.3A, 10V
16 nC @ 10 V
±30V
600 pF @ 25 V
54W (Tc)
-
FCA47N60-F109
MOSFET N-CH 600V 47A TO3PN
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
90 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3PN
N-Channel
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
70mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCU5N60TU
MOSFET N-CH 600V 4.6A I-PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
N-Channel
-
MOSFET (Metal Oxide)
-
4.6A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
950mOhm @ 2.3A, 10V
16 nC @ 10 V
±30V
600 pF @ 25 V
54W (Tc)
-
FCD7N60TF
MOSFET N-CH 600V 7A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
-
7A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
600mOhm @ 3.5A, 10V
30 nC @ 10 V
±30V
920 pF @ 25 V
83W (Tc)
-
FCD4N60TF
MOSFET N-CH 600V 3.9A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
-
3.9A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
1.2Ohm @ 2A, 10V
16.6 nC @ 10 V
±30V
540 pF @ 25 V
50W (Tc)
-
FCH47N60F
MOSFET N-CH 600V 47A TO247-3
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
900 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
73mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCP7N60_F080
MOSFET N-CH 600V 7A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
7A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
600mOhm @ 3.5A, 10V
30 nC @ 10 V
±30V
920 pF @ 25 V
83W (Tc)
-
FCP20N60_F080
MOSFET N-CH 600V 20A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
208W (Tc)
-
FCD4N60TM_WS
MOSFET N-CH 600V 3.9A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252AA
N-Channel
-
MOSFET (Metal Oxide)
-
3.9A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
1.2Ohm @ 2A, 10V
16.6 nC @ 10 V
±30V
540 pF @ 25 V
50W (Tc)
-
FCPF20N60TYDTU
MOSFET N-CH 600V 20A TO220F-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
N-Channel
-
MOSFET (Metal Oxide)
-
20A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
190mOhm @ 10A, 10V
98 nC @ 10 V
±30V
3080 pF @ 25 V
39W (Tc)
-
FCA16N60_F109
MOSFET N-CH 600V 16A TO3PN
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3PN
N-Channel
-
MOSFET (Metal Oxide)
-
16A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
260mOhm @ 8A, 10V
70 nC @ 10 V
±30V
2250 pF @ 25 V
167W (Tc)
-
FCPF7N60YDTU
MOSFET N-CH 600V 7A TO220F-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack, Formed Leads
TO-220F-3 (Y-Forming)
N-Channel
-
MOSFET (Metal Oxide)
-
7A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
600mOhm @ 3.5A, 10V
30 nC @ 10 V
±30V
920 pF @ 25 V
31W (Tc)
-
FCA47N60
MOSFET N-CH 600V 47A TO3PN
1+
$15.2113
5+
$14.3662
10+
$13.5211
Quantity
1,285 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-3P-3, SC-65-3
TO-3PN
N-Channel
-
MOSFET (Metal Oxide)
-
47A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
70mOhm @ 23.5A, 10V
270 nC @ 10 V
±30V
8000 pF @ 25 V
417W (Tc)
-
FCP7N60
MOSFET N-CH 600V 7A TO220-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
-
MOSFET (Metal Oxide)
-
7A (Tc)
5V @ 250µA
SuperFET™
600 V
10V
600mOhm @ 3.5A, 10V
30 nC @ 10 V
±30V
920 pF @ 25 V
83W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.