SuperFET® III, FRFET® Series, Single FETs, MOSFETs

Results:
26
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Vgs (Max)
FET Feature
FET Type
Technology
Results remaining26
Applied Filters:
SuperFET® III, FRFET®
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)Supplier Device PackageGradeTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
NVHL065N65S3F
SUPERFET3 650V TO247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
SuperFET® III, FRFET®
46A (Tc)
10V
65mOhm @ 23A, 10V
5V @ 1.3mA
98 nC @ 10 V
±30V
4075 pF @ 400 V
337W (Tc)
-
NVH4L040N65S3F
MOSFET N-CH 650V 65A TO247-4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
TO-247-4L
Automotive
MOSFET (Metal Oxide)
-
SuperFET® III, FRFET®
65A (Tc)
-
40mOhm @ 32.5A, 10V
5V @ 2.1mA
160 nC @ 10 V
±30V
5665 pF @ 400 V
446W (Tc)
AEC-Q101
NVH4L110N65S3F
SUPERFET3 FRFET AUTOMOTIVE 110MO
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
TO-247-4L
-
MOSFET (Metal Oxide)
-
SuperFET® III, FRFET®
30A (Tc)
10V
110mOhm @ 15A, 10V
5V @ 740µA
59 nC @ 10 V
±30V
2530 pF @ 400 V
240W (Tc)
-
NVHL110N65S3HF
SUPERFER3 FRFET AUTOMOTIVE 110MO
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
SuperFET® III, FRFET®
30A (Tc)
10V
110mOhm @ 15A, 10V
5V @ 740µA
58 nC @ 10 V
±30V
2753 pF @ 400 V
240W (Tc)
-
NVHL050N65S3F
SF3 FRFET AUTO 50MOHM TO-247
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
-
MOSFET (Metal Oxide)
-
SuperFET® III, FRFET®
58A (Tc)
10V
50mOhm @ 29A, 10V
5V @ 1.7mA
123 nC @ 10 V
±30V
5404 pF @ 400 V
403W (Tc)
-
NVHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
TO-247-3
Automotive
MOSFET (Metal Oxide)
-
SuperFET® III, FRFET®
65A (Tc)
10V
40mOhm @ 32.5A, 10V
5V @ 2.1mA
153 nC @ 10 V
±30V
5875 pF @ 400 V
446W (Tc)
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.