SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseSupplier Device PackageFET TypeDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsSeriesDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCP260N65S3
MOSFET N-CH 650V 12A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
260mOhm @ 6A, 10V
SuperFET® III
10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
NTHL185N60S5H
SUPERFET5 FAST 185MOHM TO-247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
TO-247-3
N-Channel
600 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
185mOhm @ 7.5A, 10V
SuperFET® III
10V
4.3V @ 1.4mA
25 nC @ 10 V
±30V
1350 pF @ 400 V
116W (Tc)
-
NTBL095N65S3H
SUPERFET3 FAST 95MOHM TOLL
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSFN
8-HPSOF
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
30A (Tc)
95mOhm @ 15A, 10V
SuperFET® III
10V
4V @ 2.8mA
58 nC @ 10 V
±30V
2833 pF @ 400 V
208W (Tc)
-
NTMT185N60S5H
SUPERFET5 FAST 185MOHM PQFN88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-PowerTSFN
4-TDFN (8x8)
N-Channel
600 V
-
MOSFET (Metal Oxide)
-
15A (Tc)
185mOhm @ 7.5A, 10V
SuperFET® III
10V
4.3V @ 1.4mA
25 nC @ 10 V
±30V
1350 pF @ 400 V
116W (Tc)
-
FCPF165N65S3L1
MOSFET N-CH 650V 19A TO220F-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C
TO-220-3 Full Pack
TO-220F-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
165mOhm @ 9.5A, 10V
SuperFET® III
10V
4.5V @ 1.9mA
35 nC @ 10 V
±30V
1415 pF @ 400 V
35W (Tc)
-
FCP165N65S3R0
MOSFET N-CH 650V 19A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
165mOhm @ 9.5A, 10V
SuperFET® III
10V
4.5V @ 1.9mA
39 nC @ 10 V
±30V
1500 pF @ 400 V
154W (Tc)
-
FCP165N65S3
MOSFET N-CH 650V 19A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
165mOhm @ 9.5A, 10V
SuperFET® III
10V
4.5V @ 1.9mA
39 nC @ 10 V
±30V
1500 pF @ 400 V
154W (Tc)
-
NTP360N80S3Z
MOSFET N-CH 800V 13A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
800 V
-
MOSFET (Metal Oxide)
-
13A (Tc)
360mOhm @ 6.5A, 10V
SuperFET® III
10V
3.8V @ 300µA
25.3 nC @ 10 V
±20V
1143 pF @ 400 V
96W (Tc)
-
FCP360N65S3R0
MOSFET N-CH 650V 10A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
10A (Tc)
360mOhm @ 5A, 10V
SuperFET® III
10V
4.5V @ 1mA
18 nC @ 10 V
±30V
730 pF @ 400 V
83W (Tc)
-
NTBL070N65S3
SF3 650V EASY 70MOHM KELVIN SENS
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
8-PowerSFN
8-HPSOF
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
44A (Tc)
70mOhm @ 22A, 10V
SuperFET® III
10V
4.5V @ 1mA
82 nC @ 10 V
±30V
3300 pF @ 400 V
312W (Tc)
-
FCMT099N65S3
MOSFET N-CH 650V 30A POWER88
1+
$34.2254
5+
$32.3239
10+
$30.4225
Quantity
5,429 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
4-PowerTSFN
Power88
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
30A (Tc)
99mOhm @ 15A, 10V
SuperFET® III
10V
4.5V @ 3mA
56 nC @ 10 V
±30V
2270 pF @ 400 V
227W (Tc)
-
NTH4L067N65S3H
SUPERFET3 FAST 67MOHM TO-247-4
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-4
TO-247-4L
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
40A (Tc)
67mOhm @ 20A, 10V
SuperFET® III
10V
4V @ 3.9mA
80 nC @ 10 V
±30V
3750 pF @ 400 V
266W (Tc)
-
FCP165N65S3R0
FCP165N65S3R0 - POWER MOSFET, N-
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
TO-220-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
165mOhm @ 9.5A, 10V
SuperFET® III
10V
4.5V @ 440mA
39 nC @ 10 V
±30V
1500 pF @ 400 V
154W (Tc)
-
FCPF165N65S3R0L
FCPF165N65S3R0L - POWER MOSFET,
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220F-3
N-Channel
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
165mOhm @ 9.5A, 10V
SuperFET® III
10V
4.5V @ 410µA
35 nC @ 10 V
±30V
1415 pF @ 400 V
35W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.