SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCD360N65S3R0
MOSFET N-CH 650V 10A DPAK
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
54,011 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
10A (Tc)
4.5V @ 1mA
SuperFET® III
10V
360mOhm @ 5A, 10V
18 nC @ 10 V
±30V
730 pF @ 400 V
83W (Tc)
-
NTD360N80S3Z
MOSFET N-CH 800V 13A DPAK
1+
$8.3662
5+
$7.9014
10+
$7.4366
Quantity
49 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
800 V
-
TO-252 (DPAK)
MOSFET (Metal Oxide)
-
13A (Tc)
3.8V @ 300µA
SuperFET® III
10V
360mOhm @ 6.5A, 10V
25.3 nC @ 10 V
±20V
1143 pF @ 400 V
96W (Tc)
-
NTPF450N80S3Z
MOSFET N-CH 800V 11A TO220-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
800 V
-
TO-220-3 Fullpack/TO-220F-3SG
MOSFET (Metal Oxide)
-
11A (Tj)
3.8V @ 240µA
SuperFET® III
-
450mOhm @ 5.5A, 10V
19.3 nC @ 10 V
±20V
885 pF @ 400 V
29.5W (Tc)
-
NTPF360N80S3Z
MOSFET N-CH 800V 13A TO220FP
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
800 V
-
TO-220FP
MOSFET (Metal Oxide)
-
13A (Tc)
3.8V @ 300µA
SuperFET® III
10V
360mOhm @ 6.5A, 10V
25.3 nC @ 10 V
±20V
1143 pF @ 400 V
31W (Tc)
-
FCP190N65S3R0
MOSFET N-CH 650V 17A TO220-3
1+
$12.6761
5+
$11.9718
10+
$11.2676
Quantity
45 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
17A (Tc)
4.5V @ 1.7mA
SuperFET® III
10V
190mOhm @ 8.5A, 10V
33 nC @ 10 V
±30V
1350 pF @ 400 V
144W (Tc)
-
NVB260N65S3
SF3 650V EASY 260MOHM D2PAK AUTO
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
12A (Tc)
4.5V @ 290µA
SuperFET® III
10V
260mOhm @ 6A, 10V
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
NVB125N65S3
SF3 650V EASY 125MOHM D2PAK AUTO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 590µA
SuperFET® III
10V
125mOhm @ 12A, 10V
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-
FCP600N65S3R0
MOSFET N-CH 650V 6A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
6A (Tc)
4.5V @ 600µA
SuperFET® III
10V
600mOhm @ 3A, 10V
11 nC @ 10 V
±30V
465 pF @ 400 V
54W (Tc)
-
FCMT080N65S3
MOSFET N-CH 650V 38A 4TDFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
4-TDFN (8x8)
MOSFET (Metal Oxide)
-
38A (Tc)
4.5V @ 880µA
SuperFET® III
10V
80mOhm @ 19A, 10V
71 nC @ 10 V
±30V
2765 pF @ 400 V
260W (Tc)
-
NTHL082N65S3F
MOSFET N-CH 650V 40A TO247-3
1+
$114.0845
5+
$107.7465
10+
$101.4085
Quantity
2,688 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
40A (Tc)
5V @ 4mA
SuperFET® III
10V
82mOhm @ 20A, 10V
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
NTH4LN040N65S3H
NTH4LN040N65S3H
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
650 V
-
TO-247-4
MOSFET (Metal Oxide)
-
62A (Tc)
4V @ 6.8mA
SuperFET® III
10V
40mOhm @ 31A, 10V
132 nC @ 10 V
±30V
6513 pF @ 400 V
379W (Tc)
-
FCP125N65S3
MOSFET N-CH 650V 24A TO220-3
1+
$5.0704
5+
$4.7887
10+
$4.5070
Quantity
656 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
24A (Tc)
4.5V @ 2.4mA
SuperFET® III
10V
125mOhm @ 12A, 10V
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-
NVB095N65S3F
SF3 FRFET AUTO 95MOHM D2PAK-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
36A (Tc)
5V @ 860µA
SuperFET® III
10V
95mOhm @ 18A, 10V
66 nC @ 10 V
±30V
3020 pF @ 400 V
272W (Tc)
-
NVB099N65S3
SF3 650V EASY 99MOHM D2PAK AUTO
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
30A (Tc)
4.5V @ 740µA
SuperFET® III
10V
99mOhm @ 15A, 10V
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
NVHL040N65S3
SF3 650V EASY 40MOHM TO-247 AUTO
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
Automotive
TO-247-3
MOSFET (Metal Oxide)
-
65A (Tc)
4.5V @ 1.7mA
SuperFET® III
10V
40mOhm @ 32.5A, 10V
136 nC @ 10 V
±30V
4740 pF @ 400 V
417W (Tc)
AEC-Q101
NVH050N65S3F
SF3 FRFET AUTO 50MOHM TO-247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
58A (Tc)
5V @ 1.7mA
SuperFET® III
10V
50mOhm @ 29A, 10V
123 nC @ 10 V
±30V
5404 pF @ 400 V
403W (Tc)
-
NVH040N65S3F
SF3 FRFET AUTO 40MOHM TO-247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
65A (Tc)
5V @ 2.1mA
SuperFET® III
10V
40mOhm @ 32.5A, 10V
153 nC @ 10 V
±30V
5875 pF @ 400 V
446W (Tc)
-
NTPF600N80S3Z
SF3 800V 600MOHM TO-220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
800 V
-
TO-220FP
MOSFET (Metal Oxide)
-
8A (Tj)
3.8V @ 180µA
SuperFET® III
10V
600mOhm @ 4A, 10V
15.5 nC @ 10 V
±20V
725 pF @ 400 V
28W (Tc)
-
FCMT360N65S3
MOSFET N-CH 650V 10A 4PQFN
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
4-PQFN (8x8)
MOSFET (Metal Oxide)
-
10A (Tc)
4.5V @ 200µA
SuperFET® III
10V
360mOhm @ 5A, 10V
18 nC @ 10 V
±30V
730 pF @ 400 V
83W (Tc)
-
FCPF600N60ZL1-F154
MOSFET N-CH 600V 7.4A TO220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
600 V
-
TO-220F
MOSFET (Metal Oxide)
-
7.4A (Tj)
3.5V @ 250µA
SuperFET® III
-
600mOhm @ 3.7A, 10V
26 nC @ 10 V
±20V
1120 pF @ 25 V
28W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.