SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCPF600N65S3R0L-F154
POWER SUPERFET MOSFET N-CHANNEL
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
6A (Tc)
SuperFET® III
10V
600mOhm @ 3A, 10V
4.5V @ 120µA
11 nC @ 10 V
±30V
465 pF @ 400 V
24W (Tc)
-
NVHL050N65S3HF
MOSFET N-CH 650V 58A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
Automotive
MOSFET (Metal Oxide)
-
58A (Tc)
SuperFET® III
10V
50mOhm @ 29A, 10V
5V @ 1.7mA
119 nC @ 10 V
±30V
4880 pF @ 400 V
403W (Tc)
AEC-Q101
FCD600N65S3R0
MOSFET N-CH 650V 6A DPAK
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
650 V
-
MOSFET (Metal Oxide)
-
6A (Tc)
SuperFET® III
10V
600mOhm @ 3A, 10V
4.5V @ 600µA
11 nC @ 10 V
±30V
465 pF @ 400 V
54W (Tc)
-
FCH165N65S3R0-F155
MOSFET N-CH 650V 19A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
SuperFET® III
10V
165mOhm @ 9.5A, 10V
4.5V @ 1.9mA
39 nC @ 10 V
±30V
1500 pF @ 400 V
154W (Tc)
-
FCMT250N65S3
MOSFET N-CH 650V 12A POWER88
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
Power88
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
SuperFET® III
10V
250mOhm @ 6A, 10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
FCU360N65S3R0
MOSFET N-CH 600V IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-
-
TO-251-3 Stub Leads, IPak
IPAK
-
-
-
-
10A (Tc)
SuperFET® III
-
-
-
-
-
-
-
-
NVD360N65S3T4G
SF3 EASY AUTO 360MOHM DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
650 V
-
MOSFET (Metal Oxide)
-
10A (Tc)
SuperFET® III
10V
360mOhm @ 5A, 10V
4.5V @ 200µA
16.8 nC @ 10 V
±30V
756 pF @ 400 V
83W (Tc)
-
NVD260N65S3T4G
SF3 EASY AUTO 260MOHM DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
DPAK
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
SuperFET® III
10V
260mOhm @ 6A, 10V
4.5V @ 290µA
23.5 nC @ 10 V
±30V
1042 pF @ 400 V
90W (Tc)
-
FCPF190N65S3L1
MOSFET N-CH 650V 14A TO220F-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
14A (Tc)
SuperFET® III
10V
190mOhm @ 7A, 10V
4.5V @ 1.4mA
30 nC @ 10 V
±30V
1225 pF @ 400 V
33W (Tc)
-
FCPF190N65S3R0L
MOSFET N-CH 650V 17A TO220F-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
17A (Tc)
SuperFET® III
10V
190mOhm @ 8.5A, 10V
4.5V @ 1.7mA
33 nC @ 10 V
±30V
1350 pF @ 400 V
144W (Tc)
-
NTD600N80S3Z
MOSFET POWER, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
800 V
-
MOSFET (Metal Oxide)
-
8A (Tj)
SuperFET® III
10V
600mOhm @ 4A, 10V
3.8V @ 180µA
15.5 nC @ 10 V
±20V
725 pF @ 400 V
60W (Tc)
-
FCPF165N65S3R0L
MOSFET N-CH 650V 19A TO220F-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
19A (Tc)
SuperFET® III
10V
165mOhm @ 9.5A, 10V
4.5V @ 1.9mA
35 nC @ 10 V
±30V
1415 pF @ 400 V
35W (Tc)
-
NTPF095N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
650 V
-
MOSFET (Metal Oxide)
-
30A (Tj)
SuperFET® III
10V
95mOhm @ 15A, 10V
4V @ 2.8mA
58 nC @ 10 V
±30V
2833 pF @ 400 V
40W (Tc)
-
FCPF067N65S3
MOSFET N-CH 650V 44A TO220F
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
8,779 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
44A (Tc)
SuperFET® III
10V
67mOhm @ 22A, 10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
46W (Tc)
-
NTD250N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
2,660 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
TO-252 (DPAK)
650 V
-
MOSFET (Metal Oxide)
-
13A (Tc)
SuperFET® III
10V
250mOhm @ 6.5A, 10V
4V @ 1.1mA
24 nC @ 10 V
±30V
1261 pF @ 400 V
106W (Tc)
-
NVHL072N65S3
MOSFET N-CH 650V 44A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
Automotive
MOSFET (Metal Oxide)
-
44A (Tc)
SuperFET® III
10V
72mOhm @ 22A, 10V
4.5V @ 1mA
82 nC @ 10 V
±30V
3300 pF @ 400 V
312W (Tc)
AEC-Q101
NTP055N65S3H
MOSFET N-CH 650V 47A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
47A (Tc)
SuperFET® III
10V
55mOhm @ 23.5A, 10V
4V @ 4.8mA
96 nC @ 10 V
±30V
4305 pF @ 400 V
305W (Tc)
-
FCH023N65S3L4
MOSFET N-CH 650V 75A TO247
1+
$17.7465
5+
$16.7606
10+
$15.7746
Quantity
5,293 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
75A (Tc)
SuperFET® III
10V
23mOhm @ 37.5A, 10V
4.5V @ 7.5mA
222 nC @ 10 V
±30V
7160 pF @ 400 V
595W (Tc)
-
FCPF125N65S3
MOSFET N-CH 650V 24A TO220F
1+
$1.5211
5+
$1.4366
10+
$1.3521
Quantity
2,076 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
SuperFET® III
10V
125mOhm @ 12A, 10V
4.5V @ 2.4mA
44 nC @ 10 V
±30V
1790 pF @ 400 V
38W (Tc)
-
FCB125N65S3
MOSFET N-CH 650V 24A TO263
1+
$202.8169
5+
$191.5493
10+
$180.2817
Quantity
2,880 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
SuperFET® III
10V
125mOhm @ 12A, 10V
4.5V @ 590µA
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.