SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseDrain to Source Voltage (Vdss)GradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CRds On (Max) @ Id, VgsSeriesDrive Voltage (Max Rds On, Min Rds On)Vgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCD260N65S3
MOSFET N-CH 650V 12A TO252
1+
¥11.4085
5+
¥10.7746
10+
¥10.1408
Quantity
4,920 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
TO-252AA
MOSFET (Metal Oxide)
-
12A (Tc)
260mOhm @ 6A, 10V
SuperFET® III
10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
FCHD125N65S3R0-F155
MOSFET N-CH 650V 24A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
24A (Tc)
125mOhm @ 12A, 10V
SuperFET® III
10V
4.5V @ 590µA
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-
NTB082N65S3F
MOSFET N-CH 650V 40A D2PAK
1+
¥11.4085
5+
¥10.7746
10+
¥10.1408
Quantity
16,140 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
40A (Tc)
82mOhm @ 20A, 10V
SuperFET® III
10V
5V @ 4mA
81 nC @ 10 V
±30V
3410 pF @ 400 V
313W (Tc)
-
FCP099N65S3
MOSFET N-CH 650V 30A TO220-3
1+
¥3.8028
5+
¥3.5915
10+
¥3.3803
Quantity
21,527 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
30A (Tc)
99mOhm @ 15A, 10V
SuperFET® III
10V
4.5V @ 3mA
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
NTP095N65S3HF
MOSFET N-CH 650V 36A TO220-3
1+
¥8.8732
5+
¥8.3803
10+
¥7.8873
Quantity
3,100 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
36A (Tc)
95mOhm @ 18A, 10V
SuperFET® III
10V
5V @ 860µA
66 nC @ 10 V
±30V
2930 pF @ 400 V
272W (Tc)
-
FCP067N65S3
MOSFET N-CH 650V 44A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220
MOSFET (Metal Oxide)
-
44A (Tc)
67mOhm @ 22A, 10V
SuperFET® III
10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
312W (Tc)
-
FCH067N65S3-F155
MOSFET N-CH 650V 44A TO247
1+
¥11.4085
5+
¥10.7746
10+
¥10.1408
Quantity
13,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
44A (Tc)
67mOhm @ 22A, 10V
SuperFET® III
10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
312W (Tc)
-
FCH040N65S3-F155
MOSFET N-CH 650V 65A TO247-3
1+
¥16.4789
5+
¥15.5634
10+
¥14.6479
Quantity
1,350 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
65A (Tc)
40mOhm @ 32.5A, 10V
SuperFET® III
10V
4.5V @ 6.5mA
136 nC @ 10 V
±30V
4740 pF @ 400 V
417W (Tc)
-
FCHD040N65S3-F155
MOSFET N-CH 650V 65A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
65A (Tc)
40mOhm @ 32.5A, 10V
SuperFET® III
10V
4.5V @ 1.7mA
136 nC @ 10 V
±30V
4740 pF @ 400 V
417W (Tc)
-
NTHL040N65S3F
MOSFET N-CH 650V 65A TO247-3
1+
¥50.7042
5+
¥47.8873
10+
¥45.0704
Quantity
3,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
65A (Tc)
40mOhm @ 32.5A, 10V
SuperFET® III
10V
5V @ 6.5mA
158 nC @ 10 V
±30V
5940 pF @ 400 V
446W (Tc)
-
NTHL019N65S3H
MOSFET N-CH 650V 75A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
650 V
-
TO-247-3
MOSFET (Metal Oxide)
-
75A (Tc)
19.3mOhm @ 37.5A, 10V
SuperFET® III
-
4V @ 14.3mA
282 nC @ 10 V
±30V
15993 pF @ 400 V
625W (Tc)
-
FCB260N65S3
MOSFET N-CH 650V 12A D2PAK
1+
¥1.7746
5+
¥1.6761
10+
¥1.5775
Quantity
3,775 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
12A (Tc)
260mOhm @ 6A, 10V
SuperFET® III
10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
90W (Tc)
-
NVB190N65S3F
MOSFET N-CH 650V 20A D2PAK-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
Automotive
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
20A (Tc)
190mOhm @ 10A, 10V
SuperFET® III
10V
5V @ 430µA
34 nC @ 10 V
±30V
1605 pF @ 400 V
162W (Tc)
AEC-Q101
FCB199N65S3
MOSFET N-CH 650V 14A D2PAK
1+
¥5.3239
5+
¥5.0282
10+
¥4.7324
Quantity
1,600 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
14A (Tc)
199mOhm @ 7A, 10V
SuperFET® III
10V
4.5V @ 1.4mA
30 nC @ 10 V
±30V
1225 pF @ 400 V
98W (Tc)
-
NTMT125N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
4-TDFN (8x8)
MOSFET (Metal Oxide)
-
24A (Tc)
125mOhm @ 12A, 10V
SuperFET® III
10V
4V @ 2.1mA
44 nC @ 10 V
±30V
2200 pF @ 400 V
171W (Tc)
-
FCP190N65S3
MOSFET N-CH 650V 17A TO220-3
1+
¥2.5352
5+
¥2.3944
10+
¥2.2535
Quantity
883 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
650 V
-
TO-220-3
MOSFET (Metal Oxide)
-
17A (Tc)
190mOhm @ 8.5A, 10V
SuperFET® III
10V
4.5V @ 1.7mA
33 nC @ 10 V
±30V
1350 pF @ 400 V
144W (Tc)
-
NTPF250N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
TO-220FP
MOSFET (Metal Oxide)
-
13A (Tj)
250mOhm @ 6.5A, 10V
SuperFET® III
10V
4V @ 1.1mA
24 nC @ 10 V
±30V
1261 pF @ 400 V
29W (Tc)
-
FCPF360N65S3R0L-F154
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
650 V
-
TO-220F-3
MOSFET (Metal Oxide)
-
10A (Tj)
360mOhm @ 5A, 10V
SuperFET® III
10V
4.5V @ 200µA
18 nC @ 10 V
±30V
730 pF @ 400 V
27W (Tc)
-
NTMT095N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
650 V
-
4-TDFN (8x8)
MOSFET (Metal Oxide)
-
30A (Tc)
95mOhm @ 15A, 10V
SuperFET® III
10V
4V @ 2.8mA
58 nC @ 10 V
±30V
2833 pF @ 400 V
208W (Tc)
-
FCB070N65S3
MOSFET N-CH 650V 44A D2PAK
1+
¥8.6197
5+
¥8.1408
10+
¥7.6620
Quantity
10,580 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
TO-263 (D2Pak)
MOSFET (Metal Oxide)
-
44A (Tc)
70mOhm @ 22A, 10V
SuperFET® III
10V
4.5V @ 4.4mA
78 nC @ 10 V
±30V
3090 pF @ 400 V
312W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.