SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypeSupplier Device PackagePackage / CaseDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
NTPF360N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
10A (Tj)
10V
360mOhm @ 5A, 10V
4V @ 700µA
17.5 nC @ 10 V
±30V
916 pF @ 400 V
26W (Tc)
-
NTPF165N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
19A (Tc)
10V
165mOhm @ 9.5A, 10V
4V @ 1.6mA
35 nC @ 10 V
±30V
1808 pF @ 400 V
33W (Tc)
-
NTPF190N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220FP
TO-220-3 Full Pack
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
16A (Tj)
10V
190mOhm @ 8A, 10V
4V @ 1.4mA
31 nC @ 10 V
±30V
1600 pF @ 400 V
32W (Tc)
-
NTHL125N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$54.0000
5+
$51.0000
10+
$48.0000
Quantity
300 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
24A (Tc)
10V
125mOhm @ 12A, 10V
4V @ 2.1mA
44 nC @ 10 V
±30V
2200 pF @ 400 V
171W (Tc)
-
NTH4LN095N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
30A (Tc)
10V
95mOhm @ 15A, 10V
4V @ 2.8mA
58 nC @ 10 V
±30V
2833 pF @ 400 V
208W (Tc)
-
NTP165N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
19A (Tc)
10V
165mOhm @ 9.5A, 10V
4V @ 1.6mA
35 nC @ 10 V
±30V
1808 pF @ 400 V
142W (Tc)
-
FCPF250N65S3L1-F154
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220F-3
TO-220-3 Full Pack
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
12A (Tj)
10V
250mOhm @ 6A, 10V
4.5V @ 290µA
24 nC @ 10 V
±30V
1010 pF @ 400 V
31W (Tc)
-
NTH4LN067N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
40A (Tc)
10V
67mOhm @ 20A, 10V
4V @ 3.9mA
80 nC @ 10 V
±30V
3750 pF @ 400 V
266W (Tc)
-
NTH4LN019N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-4
TO-247-4
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
75A (Tc)
10V
19.3mOhm @ 37.5A, 10V
4V @ 14.3mA
282 nC @ 10 V
±30V
15993 pF @ 400 V
625W (Tc)
-
FCP165N65S3
POWMOSFEN-CHANNESUPERFIIEADRIV65
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
19A (Tc)
10V
165mOhm @ 9.5A, 10V
4.5V @ 1.9mA
39 nC @ 10 V
±30V
1500 pF @ 400 V
154W (Tc)
-
FCHD190N65S3R0-F155
MOSFET N-CH 650V 17A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
17A (Tc)
10V
190mOhm @ 8.5A, 10V
4.5V @ 390µA
33 nC @ 10 V
±30V
1350 pF @ 400 V
144W (Tc)
-
FCH029N65S3-F155
MOSFET N-CH 650V 75A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
75A (Tc)
-
29mOhm @ 37.5A, 10V
4.5V @ 7mA
201 nC @ 10 V
±30V
6340 pF @ 400 V
463W (Tc)
-
FCB099N65S3
MOSFET N-CH 650V 30A D2PAK-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263 (D2Pak)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
30A (Tc)
10V
99mOhm @ 15A, 10V
4.5V @ 740µA
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
NVHL025N65S3
MOSFET N-CH 650V 75A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
Automotive
MOSFET (Metal Oxide)
-
SuperFET® III
75A (Tc)
10V
25mOhm @ 37.5A, 10V
4.5V @ 3mA
236 nC @ 10 V
±30V
7330 pF @ 400 V
595W (Tc)
AEC-Q101
FCH125N65S3R0-F155
MOSFET N-CH 650V 24A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
24A (Tc)
10V
125mOhm @ 12A, 10V
4.5V @ 2.4mA
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-
NTPF082N65S3F
MOSFET N-CH 650V 40A TO220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220F-3
TO-220-3 Full Pack
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
40A (Tc)
10V
82mOhm @ 20A, 10V
5V @ 4mA
70 nC @ 10 V
±30V
3240 pF @ 400 V
48W (Tc)
-
FCH099N65S3-F155
MOSFET N-CH 650V 30A TO247-3
1+
$45.0000
5+
$42.5000
10+
$40.0000
Quantity
5,214 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
30A (Tc)
10V
99mOhm @ 15A, 10V
4.5V @ 3mA
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
NTD360N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$36.0000
5+
$34.0000
10+
$32.0000
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-252 (DPAK)
TO-252-3, DPak (2 Leads + Tab), SC-63
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
10A (Tc)
10V
360mOhm @ 5A, 10V
4V @ 700µA
17.5 nC @ 10 V
±30V
916 pF @ 400 V
83W (Tc)
-
NTP067N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
40A (Tc)
10V
67mOhm @ 20A, 10V
4V @ 3.9mA
80 nC @ 10 V
±30V
3750 pF @ 400 V
266W (Tc)
-
FCMT180N65S3
MOSFET N-CH 650V 17A POWER88
1+
$21.6000
5+
$20.4000
10+
$19.2000
Quantity
2,730 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
Power88
4-PowerTSFN
650 V
-
MOSFET (Metal Oxide)
-
SuperFET® III
17A (Tc)
10V
180mOhm @ 8.5A, 10V
4.5V @ 1.8mA
33 nC @ 10 V
±30V
1350 pF @ 400 V
139W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.