SuperFET® III Series, Single FETs, MOSFETs

Results:
114
Manufacturer
Series
Power Dissipation (Max)
Input Capacitance (Ciss) (Max) @ Vds
Vgs(th) (Max) @ Id
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Operating Temperature
Vgs (Max)
FET Type
Grade
Mounting Type
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
Results remaining114
Applied Filters:
SuperFET® III
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageDrain to Source Voltage (Vdss)GradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
FCPF250N65S3R0L
MOSFET N-CH 650V 12A TO220F-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
SuperFET® III
10V
250mOhm @ 6A, 10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
31W (Tc)
-
FCH099N65S3_F155
MOSFET N-CH 650V 30A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
30A (Tc)
SuperFET® III
10V
99mOhm @ 15A, 10V
4.5V @ 3mA
61 nC @ 10 V
±30V
2480 pF @ 400 V
227W (Tc)
-
FCPF250N65S3L1
MOSFET N-CH 650V 12A TO220F-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
12A (Tc)
SuperFET® III
10V
250mOhm @ 6A, 10V
4.5V @ 1.2mA
24 nC @ 10 V
±30V
1010 pF @ 400 V
31W (Tc)
-
FCPF600N60ZL1
MOSFET N-CH 650V 7.4A TO220F
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
7.4A (Tc)
SuperFET® III
10V
600mOhm @ 3.7A, 10V
3.5V @ 250µA
26 nC @ 10 V
±20V
1120 pF @ 25 V
28W (Tc)
-
FCPF600N65S3R0L
MOSFET N-CH 650V 6A TO220F-3
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
1,190 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
6A (Tc)
SuperFET® III
10V
600mOhm @ 3A, 10V
4.5V @ 600µA
11 nC @ 10 V
±30V
465 pF @ 400 V
24W (Tc)
-
FCPF360N65S3R0L
MOSFET N-CH 650V 10A TO220F-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
10A (Tc)
SuperFET® III
10V
360mOhm @ 5A, 10V
4.5V @ 1mA
18 nC @ 10 V
±30V
730 pF @ 400 V
27W (Tc)
-
NVB190N65S3
MOSFET N-CH 650V 20A D2PAK-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
TO-263 (D2Pak)
650 V
Automotive
MOSFET (Metal Oxide)
-
20A (Tc)
SuperFET® III
10V
190mOhm @ 10A, 10V
5V @ 430µA
34 nC @ 10 V
±30V
1605 pF @ 400 V
162W (Tc)
AEC-Q101
FCH023N65S3-F155
MOSFET N-CH 650V 75A TO247
1+
$16.4789
5+
$15.5634
10+
$14.6479
Quantity
1,800 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
75A (Tc)
SuperFET® III
10V
23mOhm @ 37.5A, 10V
4.5V @ 7.5mA
222 nC @ 10 V
±30V
7160 pF @ 400 V
595W (Tc)
-
FCP125N65S3R0
MOSFET N-CH 650V 24A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
SuperFET® III
10V
125mOhm @ 12A, 10V
4.5V @ 2.4mA
46 nC @ 10 V
±30V
1940 pF @ 400 V
181W (Tc)
-
FCPF099N65S3
MOSFET N-CH 650V 30A TO220F
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F
650 V
-
MOSFET (Metal Oxide)
-
30A (Tc)
SuperFET® III
10V
99mOhm @ 15A, 10V
4.5V @ 3mA
57 nC @ 10 V
±30V
2310 pF @ 400 V
43W (Tc)
-
NTP095N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
30A (Tc)
SuperFET® III
10V
95mOhm @ 15A, 10V
4V @ 2.8mA
58 nC @ 10 V
±30V
2833 pF @ 400 V
208W (Tc)
-
NTPF125N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
650 V
-
MOSFET (Metal Oxide)
-
24A (Tj)
SuperFET® III
10V
125mOhm @ 12A, 10V
4V @ 2.1mA
44 nC @ 10 V
±30V
2200 pF @ 400 V
37W (Tc)
-
FCMT125N65S3
MOSFET N-CH 650V 24A 4PQFN
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
4-PQFN (8x8)
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
SuperFET® III
10V
125mOhm @ 12A, 10V
4.5V @ 590µA
49 nC @ 10 V
±30V
1920 pF @ 400 V
181W (Tc)
-
FCPF250N65S3R0L-F154
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220F-3
650 V
-
MOSFET (Metal Oxide)
-
12A (Tj)
SuperFET® III
10V
250mOhm @ 6A, 10V
4.5V @ 290µA
24 nC @ 10 V
±30V
1010 pF @ 400 V
31W (Tc)
-
FCU600N65S3R0
MOSFET N-CH 650V 6A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Stub Leads, IPak
IPAK
650 V
-
MOSFET (Metal Oxide)
-
6A (Tc)
SuperFET® III
10V
600mOhm @ 3A, 10V
4.5V @ 600µA
11 nC @ 10 V
±30V
465 pF @ 400 V
54W (Tc)
-
NTHL095N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
30A (Tc)
SuperFET® III
10V
95mOhm @ 15A, 10V
4V @ 2.8mA
58 nC @ 10 V
±30V
2833 pF @ 400 V
208W (Tc)
-
NTMT190N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
N-Channel
4-PowerTSFN
4-TDFN (8x8)
650 V
-
MOSFET (Metal Oxide)
-
16A (Tc)
SuperFET® III
10V
190mOhm @ 8A, 10V
4V @ 1.4mA
31 nC @ 10 V
±30V
1600 pF @ 400 V
129W (Tc)
-
NTP125N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220-3
650 V
-
MOSFET (Metal Oxide)
-
24A (Tc)
SuperFET® III
10V
125mOhm @ 12A, 10V
4V @ 2.1mA
44 nC @ 10 V
±30V
2200 pF @ 400 V
171W (Tc)
-
NTHL067N65S3H
POWER MOSFET, N-CHANNEL, SUPERFE
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
1,531 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
40A (Tc)
SuperFET® III
10V
67mOhm @ 20A, 10V
4V @ 3.9mA
80 nC @ 10 V
±30V
3750 pF @ 400 V
266W (Tc)
-
NTHL065N65S3HF
MOSFET N-CH 650V 46A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-247-3
TO-247-3
650 V
-
MOSFET (Metal Oxide)
-
46A (Tc)
SuperFET® III
-
65mOhm @ 23A, 10V
5V @ 1.3mA
98 nC @ 10 V
±30V
4075 pF @ 400 V
337W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.