OptiMOS™5 Series, Single FETs, MOSFETs

Results:
24
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining24
Applied Filters:
OptiMOS™5
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureGradeTechnologySupplier Device PackageFET FeatureSeriesCurrent - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPA040N06NM5SXKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO220 Full Pack
-
OptiMOS™5
72A (Tc)
6V, 10V
4mOhm @ 72A, 10V
3.3V @ 50µA
50 nC @ 10 V
±20V
3500 pF @ 30 V
36W (Tc)
-
IPA052N08NM5SXKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
80 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO220 Full Pack
-
OptiMOS™5
64A (Tc)
6V, 10V
5.2mOhm @ 32A, 10V
3.8V @ 65µA
56 nC @ 10 V
±20V
3800 pF @ 40 V
38W (Tc)
-
IPA029N06NM5SXKSA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
60 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO220 Full Pack
-
OptiMOS™5
87A (Tc)
6V, 10V
2.9mOhm @ 87A, 10V
3.3V @ 36µA
74 nC @ 10 V
±20V
5300 pF @ 30 V
38W (Tc)
-
IPA050N10NM5SXKSA1
MOSFET N-CH 100V 66A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
100 V
-55°C ~ 175°C (TJ)
-
MOSFET (Metal Oxide)
PG-TO220 Full Pack
-
OptiMOS™5
66A (Tc)
6V, 10V
5mOhm @ 33A, 10V
3.8V @ 84µA
68 nC @ 10 V
±20V
4700 pF @ 50 V
38W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.