OptiMOS™5 Series, Single FETs, MOSFETs

Results:
24
Manufacturer
Series
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Rds On (Max) @ Id, Vgs
Current - Continuous Drain (Id) @ 25°C
Vgs(th) (Max) @ Id
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
Operating Temperature
Vgs (Max)
Mounting Type
FET Feature
FET Type
Grade
Qualification
Technology
Results remaining24
Applied Filters:
OptiMOS™5
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureGradeSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
IPP051N15N5XKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO220-3-1
MOSFET (Metal Oxide)
-
120A (Tc)
OptiMOS™5
150 V
8V, 10V
5.1mOhm @ 60A, 10V
4.6V @ 264µA
100 nC @ 10 V
±20V
7800 pF @ 75 V
300W (Tc)
-
IQE006NE2LM5ATMA1
MOSFET N-CH 25V 41A/298A 8TSON
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
-55°C ~ 150°C (TJ)
-
PG-TSON-8-4
MOSFET (Metal Oxide)
-
41A (Ta), 298A (Tc)
OptiMOS™5
25 V
4.5V, 10V
650mOhm @ 20A, 10V
2V @ 250µA
82.1 nC @ 10 V
±16V
5453 pF @ 12 V
2.1W (Ta), 89W (Tc)
-
IRL40DM247XTMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
DirectFET™ Isometric ME
N-Channel
-40°C ~ 150°C (TJ)
-
MG-WDSON-8-904
MOSFET (Metal Oxide)
-
44A (Ta), 211A (Tc)
OptiMOS™5
40 V
4.5V, 10V
0.82mOhm @ 50A, 10V
2V @ 250µA
165 nC @ 10 V
±20V
8400 pF @ 20 V
2.8W (Ta), 63W (Tc)
-
IST019N08NM5AUMA1
TRENCH 40<-<100V PG-HSOF-5
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
5-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-5-1
MOSFET (Metal Oxide)
-
32A (Ta), 290A (Tc)
OptiMOS™5
80 V
6V, 10V
1.9mOhm @ 100A, 10V
3.8V @ 148µA
132 nC @ 10 V
±20V
6600 pF @ 40 V
3.8W (Ta), 313W (Tc)
-
IST026N10NM5AUMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
5-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-5-1
MOSFET (Metal Oxide)
-
27A (Ta), 248A (Tc)
OptiMOS™5
100 V
6V, 10V
2.6mOhm @ 100A, 10V
3.8V @ 148µA
125 nC @ 10 V
±20V
6300 pF @ 50 V
3.8W (Ta), 313W (Tc)
-
IST011N06NM5AUMA1
TRENCH 40<-<100V PG-HSOF-5
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
5-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-5-1
MOSFET (Metal Oxide)
-
38A (Ta), 399A (Tc)
OptiMOS™5
60 V
6V, 10V
1.1mOhm @ 100A, 10V
3.3V @ 148µA
154 nC @ 10 V
±20V
8100 pF @ 30 V
3.8W (Ta), 313W (Tc)
-
IST015N06NM5AUMA1
OPTIMOS 5 POWER MOSFET 60 V
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
5-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-5-1
MOSFET (Metal Oxide)
-
36A (Ta), 242A (Tc)
OptiMOS™5
60 V
6V, 10V
1.5mOhm @ 50A, 10V
3.3V @ 95µA
89 nC @ 10 V
±20V
5200 pF @ 30 V
3.8W (Ta), 167W (Tc)
-
IPTC007N06NM5ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
16-PowerSOP Module
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HDSOP-16-U01
MOSFET (Metal Oxide)
-
52A (Ta), 454A (Tc)
OptiMOS™5
60 V
6V, 10V
0.75mOhm @ 150A, 10V
3.3V @ 280µA
261 nC @ 10 V
±20V
21000 pF @ 30 V
3.8W (Ta), 375W (Tc)
-
IPT019N08N5ATMA1
MOSFET N-CH 80V 32A/247A 8HSOF
1+
$10.1408
5+
$9.5775
10+
$9.0141
Quantity
2,135 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-8-1
MOSFET (Metal Oxide)
-
32A (Ta), 247A (Tc)
OptiMOS™5
80 V
6V, 10V
1.9mOhm @ 150A, 10V
3.8V @ 159µA
127 nC @ 10 V
±20V
9200 pF @ 40 V
231W (Tc)
-
ISC017N04NM5ATMA1
MOSFET N-CH 40V 193A TDSON-8
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TDSON-8 FL
MOSFET (Metal Oxide)
-
31A (Ta), 193A (Tc)
OptiMOS™5
40 V
7V, 10V
1.7mOhm @ 50A, 10V
3.4V @ 60µA
67 nC @ 10 V
±20V
4800 pF @ 20 V
3W (Ta), 115W (Tc)
-
IAUC120N06S5L011ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TDSON-8-53
MOSFET (Metal Oxide)
-
310A (Tj)
OptiMOS™5
60 V
4.5V, 10V
1.1mOhm @ 60A, 10V
2.2V @ 130µA
160 nC @ 10 V
±20V
11400 pF @ 30 V
188W (Tc)
-
IAUTN12S5N018GATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerSMD, Gull Wing
N-Channel
-55°C ~ 175°C
-
PG-HSOG-8-1
MOSFET (Metal Oxide)
-
-
OptiMOS™5
120 V
-
-
-
-
-
-
-
-
IPT020N10N5ATMA1
MOSFET N-CH 100V 31A/260A 8HSOF
1+
$25.3521
5+
$23.9437
10+
$22.5352
Quantity
1,591 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-8-1
MOSFET (Metal Oxide)
-
31A (Ta), 260A (Tc)
OptiMOS™5
100 V
6V, 10V
2mOhm @ 150A, 10V
3.8V @ 202µA
152 nC @ 10 V
±20V
11000 pF @ 50 V
273W (Tc)
-
IPT026N10N5ATMA1
MOSFET N-CH 100V 27A/202A 8HSOF
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerSFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HSOF-8-1
MOSFET (Metal Oxide)
-
27A (Ta), 202A (Tc)
OptiMOS™5
100 V
6V, 10V
2.6mOhm @ 150A, 10V
3.8V @ 158µA
120 nC @ 10 V
±20V
8800 pF @ 50 V
214W (Tc)
-
IAUTN12S5N017ATMA1
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerSFN
N-Channel
-55°C ~ 175°C
-
PG-HSOF-8-1
MOSFET (Metal Oxide)
-
-
OptiMOS™5
120 V
-
-
-
-
-
-
-
-
IAUTN12S5N018TATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
16-PowerSOP Module
N-Channel
-55°C ~ 175°C
-
PG-HDSOP-16-2
MOSFET (Metal Oxide)
-
-
OptiMOS™5
120 V
-
-
-
-
-
-
-
-
IPTC012N06NM5ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
16-PowerSOP Module
N-Channel
-55°C ~ 175°C (TJ)
-
PG-HDSOP-16-U01
MOSFET (Metal Oxide)
-
41A (Ta), 311A (Tc)
OptiMOS™5
60 V
6V, 10V
1.2mOhm @ 100A, 10V
3.3V @ 143µA
133 nC @ 10 V
±20V
10000 pF @ 30 V
3.8W (Ta), 214W (Tc)
-
IPA060N06NM5SXKSA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO220 Full Pack
MOSFET (Metal Oxide)
-
56A (Tc)
OptiMOS™5
60 V
6V, 10V
6mOhm @ 56A, 10V
3.3V @ 36µA
36 nC @ 10 V
±20V
2600 pF @ 30 V
33W (Tc)
-
IQE220N15NM5ATMA1
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerTDFN
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TSON-8-5
MOSFET (Metal Oxide)
-
7A (Ta), 44A (Tc)
OptiMOS™5
150 V
8V, 10V
22mOhm @ 16A, 10V
4.6V @ 46µA
18 nC @ 10 V
±20V
1400 pF @ 75 V
2.5W (Ta), 100W (Tc)
-
IPA083N10NM5SXKSA1
MOSFET N-CH 100V 50A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
-55°C ~ 175°C (TJ)
-
PG-TO220 Full Pack
MOSFET (Metal Oxide)
-
50A (Tc)
OptiMOS™5
100 V
6V, 10V
8.3mOhm @ 25A, 10V
3.8V @ 49µA
40 nC @ 10 V
±20V
2700 pF @ 50 V
36W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.