OptiMOS®-P2 Series, Single FETs, MOSFETs

Results:
28
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Vgs(th) (Max) @ Id
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drive Voltage (Max Rds On, Min Rds On)
Grade
Mounting Type
Drain to Source Voltage (Vdss)
Qualification
Vgs (Max)
Operating Temperature
FET Feature
FET Type
Technology
Results remaining28
Applied Filters:
OptiMOS®-P2
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseDrain to Source Voltage (Vdss)Operating TemperatureSupplier Device PackageTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)QualificationGrade
IPB80P04P405ATMA2
MOSFET P-CH 40V 80A TO263-3
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
1,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
PG-TO263-3-2
MOSFET (Metal Oxide)
-
80A (Tc)
4V @ 250µA
OptiMOS®-P2
-
5.2mOhm @ 80A, 10V
151 nC @ 10 V
±20V
10300 pF @ 25 V
125W (Tc)
AEC-Q101
Automotive
IPD80P03P4L07ATMA2
MOSFET P-CH 30V 80A TO252-31
1+
$3.0423
5+
$2.8732
10+
$2.7042
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-55°C ~ 175°C (TJ)
PG-TO252-3-11
MOSFET (Metal Oxide)
-
80A (Tc)
2V @ 130µA
OptiMOS®-P2
-
6.8mOhm @ 80A, 10V
80 nC @ 10 V
+5V, -16V
5700 pF @ 25 V
88W (Tc)
AEC-Q101
Automotive
IPB80P04P4L08ATMA2
MOSFET P-CH 40V 80A TO263-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
40 V
-55°C ~ 175°C (TJ)
PG-TO263-3-2
MOSFET (Metal Oxide)
-
80A (Tc)
2.2V @ 120µA
OptiMOS®-P2
4.5V, 10V
8.2mOhm @ 80A, 10V
92 nC @ 10 V
+5V, -16V
5430 pF @ 25 V
75W (Tc)
-
-
IPD85P04P407ATMA2
MOSFET P-CH 40V 85A TO252-3
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
1,545 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
PG-TO252-3-313
MOSFET (Metal Oxide)
-
85A (Tc)
4V @ 150µA
OptiMOS®-P2
-
7.3mOhm @ 85A, 10V
89 nC @ 10 V
±20V
6085 pF @ 25 V
88W (Tc)
AEC-Q101
Automotive
IPD70P04P409ATMA2
MOSFET P-CH 40V 73A TO252-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
PG-TO252-3-313
MOSFET (Metal Oxide)
-
73A (Tc)
4V @ 120µA
OptiMOS®-P2
-
8.9mOhm @ 70A, 10V
70 nC @ 10 V
±20V
4810 pF @ 25 V
75W (Tc)
AEC-Q101
Automotive
IPD70P04P4L08ATMA2
MOSFET P-CH 40V 70A TO252-3
1+
$1.4704
5+
$1.3887
10+
$1.3070
Quantity
5,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
40 V
-55°C ~ 175°C (TJ)
PG-TO252-3-313
MOSFET (Metal Oxide)
-
70A (Tc)
2.2V @ 120µA
OptiMOS®-P2
4.5V, 10V
7.8mOhm @ 70A, 10V
92 nC @ 10 V
+5V, -16V
5430 pF @ 25 V
75W (Tc)
-
-
IPD90P03P404ATMA2
MOSFET P-CH 30V 90A TO252-31
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-55°C ~ 175°C (TJ)
PG-TO252-3-11
MOSFET (Metal Oxide)
-
90A (Tc)
4V @ 253µA
OptiMOS®-P2
-
4.5mOhm @ 90A, 10V
130 nC @ 10 V
±20V
10300 pF @ 25 V
137W (Tc)
AEC-Q101
Automotive
IPD90P03P4L04ATMA2
MOSFET P-CH 30V 90A TO252-31
1+
$22.8169
5+
$21.5493
10+
$20.2817
Quantity
2,500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
P-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
30 V
-55°C ~ 175°C (TJ)
PG-TO252-3-11
MOSFET (Metal Oxide)
-
90A (Tc)
2V @ 253µA
OptiMOS®-P2
-
4.1mOhm @ 90A, 10V
160 nC @ 10 V
+5V, -16V
11300 pF @ 25 V
137W (Tc)
AEC-Q101
Automotive

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.