MESH OVERLAY™ Series, Single FETs, MOSFETs

Results:
25
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Input Capacitance (Ciss) (Max) @ Vds
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Package / Case
Operating Temperature
Drain to Source Voltage (Vdss)
Mounting Type
Vgs(th) (Max) @ Id
Vgs (Max)
FET Feature
FET Type
Grade
Qualification
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining25
Applied Filters:
MESH OVERLAY™
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeSupplier Device PackageGradeTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Gate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STN1N20
MOSFET N-CH 200V 1A SOT223
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-261-4, TO-261AA
N-Channel
SOT-223
-
MOSFET (Metal Oxide)
-
1.5Ohm @ 500mA, 10V
5V @ 250µA
MESH OVERLAY™
200 V
1A (Tc)
10V
15.7 nC @ 10 V
±20V
206 pF @ 25 V
2.9W (Tc)
-
STY100NS20FD
MOSFET N-CH 200V 100A MAX247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-247-3
N-Channel
MAX247™
-
MOSFET (Metal Oxide)
-
24mOhm @ 50A, 10V
4V @ 250µA
MESH OVERLAY™
200 V
100A (Tc)
10V
360 nC @ 10 V
±20V
7900 pF @ 25 V
450W (Tc)
-
STP8NS25FP
MOSFET N-CH 250V 8A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-220-3 Full Pack
N-Channel
TO-220FP
-
MOSFET (Metal Oxide)
-
450mOhm @ 4A, 10V
4V @ 250µA
MESH OVERLAY™
250 V
8A (Tc)
10V
51.8 nC @ 10 V
±20V
770 pF @ 25 V
30W (Tc)
-
STY140NS10
MOSFET N-CH 100V 140A MAX247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 175°C (TJ)
TO-247-3
N-Channel
MAX247™
-
MOSFET (Metal Oxide)
-
11mOhm @ 70A, 10V
4V @ 250µA
MESH OVERLAY™
100 V
140A (Tc)
10V
600 nC @ 10 V
±20V
12600 pF @ 25 V
450W (Tc)
-
STD4NS25T4
MOSFET N-CH 250V 4A DPAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
-
MOSFET (Metal Oxide)
-
1.1Ohm @ 2A, 10V
4V @ 250µA
MESH OVERLAY™
250 V
4A (Tc)
10V
27 nC @ 10 V
±20V
355 pF @ 25 V
50W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.