MDmesh™ M2-EP Series, Single FETs, MOSFETs

Results:
25
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Input Capacitance (Ciss) (Max) @ Vds
Package / Case
Operating Temperature
Vgs(th) (Max) @ Id
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Results remaining25
Applied Filters:
MDmesh™ M2-EP
Select
ImageProduct DetailPriceAvailabilityECAD ModelOperating TemperatureMounting TypePackage / CaseFET TypeSupplier Device PackageInput Capacitance (Ciss) (Max) @ VdsGradeTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Power Dissipation (Max)Qualification
STP20N60M2-EP
MOSFET N-CHANNEL 600V 13A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
-
Through Hole
TO-220-3
N-Channel
TO-220
-
-
MOSFET (Metal Oxide)
-
-
-
-
MDmesh™ M2-EP
600 V
13A (Tc)
10V
±25V
110W (Tc)
-
STF20N60M2-EP
MOSFET N-CH 600V 13A TO220FP
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Quantity
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PCB Symbol, Footprint & 3D Model
150°C (TJ)
Through Hole
TO-220-3 Full Pack
N-Channel
TO-220FP
-
-
MOSFET (Metal Oxide)
-
-
4.75V @ 250µA
22 nC @ 10 V
MDmesh™ M2-EP
600 V
13A (Tc)
10V
±25V
-
-
STP35N60M2-EP
MOSFET N-CH 600V TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
150°C (TJ)
Through Hole
TO-220-3
N-Channel
TO-220
-
-
MOSFET (Metal Oxide)
-
-
-
-
MDmesh™ M2-EP
600 V
26A (Tc)
-
±25V
-
-
STP27N60M2-EP
MOSFET N-CH 600V 20A TO220
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Quantity
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PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3
N-Channel
TO-220
1320 pF @ 100 V
-
MOSFET (Metal Oxide)
-
163mOhm @ 10A, 10V
4.75V @ 250µA
33 nC @ 10 V
MDmesh™ M2-EP
600 V
20A (Tc)
10V
±25V
170W (Tc)
-
STF11N60M2-EP
MOSFET N-CH 600V 7.5A TO220FP
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Quantity
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PCB Symbol, Footprint & 3D Model
-55°C ~ 150°C (TJ)
Through Hole
TO-220-3 Full Pack
N-Channel
TO-220FP
390 pF @ 100 V
-
MOSFET (Metal Oxide)
-
595mOhm @ 3.75A, 10V
4.75V @ 250µA
12.4 nC @ 10 V
MDmesh™ M2-EP
600 V
7.5A (Tc)
10V
±25V
25W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.