MDmesh™ M2-EP Series, Single FETs, MOSFETs

Results:
25
Manufacturer
Series
Power Dissipation (Max)
Current - Continuous Drain (Id) @ 25°C
Rds On (Max) @ Id, Vgs
Gate Charge (Qg) (Max) @ Vgs
Supplier Device Package
Input Capacitance (Ciss) (Max) @ Vds
Package / Case
Operating Temperature
Vgs(th) (Max) @ Id
Mounting Type
Vgs (Max)
Drive Voltage (Max Rds On, Min Rds On)
FET Feature
FET Type
Grade
Drain to Source Voltage (Vdss)
Qualification
Technology
Results remaining25
Applied Filters:
MDmesh™ M2-EP
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypePackage / CaseOperating TemperatureInput Capacitance (Ciss) (Max) @ VdsGradeTechnologyFET FeatureRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Vgs (Max)Supplier Device PackagePower Dissipation (Max)Qualification
STL11N60M2-EP
MOSFET N-CH 600V POWERFLAT HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
150°C (TJ)
-
-
MOSFET (Metal Oxide)
-
-
-
-
MDmesh™ M2-EP
600 V
5.5A (Tc)
-
-
PowerFlat™ (5x6) HV
-
-
STI20N60M2-EP
MOSFET N-CHANNEL 600V 13A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 150°C (TJ)
787 pF @ 100 V
-
MOSFET (Metal Oxide)
-
278mOhm @ 6.5A, 10V
4.75V @ 250µA
21.7 nC @ 10 V
MDmesh™ M2-EP
600 V
13A (Tc)
10V
±25V
TO-220
110W (Tc)
-
STW20N60M2-EP
MOSFET N-CHANNEL 600V 13A TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
787 pF @ 100 V
-
MOSFET (Metal Oxide)
-
278mOhm @ 6.5A, 10V
4V @ 250µA
21.7 nC @ 10 V
MDmesh™ M2-EP
600 V
13A (Tc)
10V
±25V
TO-247
110W (Tc)
-
STB20N60M2-EP
MOSFET N-CH 600V 13A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
150°C (TJ)
-
-
MOSFET (Metal Oxide)
-
-
4.75V @ 250µA
22 nC @ 10 V
MDmesh™ M2-EP
600 V
13A (Tc)
10V
-
TO-263 (D2Pak)
-
-
STW35N60M2-EP
MOSFET N-CH 600V TO247
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
150°C (TJ)
-
-
MOSFET (Metal Oxide)
-
-
-
-
MDmesh™ M2-EP
600 V
26A (Tc)
-
-
TO-247
-
-
STD11N60M2-EP
MOSFET N-CH 600V 7.5A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 150°C (TJ)
390 pF @ 100 V
-
MOSFET (Metal Oxide)
-
595mOhm @ 3.75A, 10V
4.75V @ 250µA
12.4 nC @ 10 V
MDmesh™ M2-EP
600 V
7.5A (Tc)
10V
±25V
DPAK
85W (Tc)
-
STF25N60M2-EP
MOSFET N-CH 600V 18A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-55°C ~ 150°C (TJ)
1090 pF @ 100 V
-
MOSFET (Metal Oxide)
-
188mOhm @ 9A, 10V
4.75V @ 250µA
29 nC @ 10 V
MDmesh™ M2-EP
600 V
18A (Tc)
10V
±25V
TO-220FP
30W (Tc)
-
STP25N60M2-EP
MOSFET N-CH 600V 18A TO220
1+
$9.6338
5+
$9.0986
10+
$8.5634
Quantity
193 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 150°C (TJ)
1090 pF @ 100 V
-
MOSFET (Metal Oxide)
-
188mOhm @ 9A, 10V
4.75V @ 250µA
29 nC @ 10 V
MDmesh™ M2-EP
600 V
18A (Tc)
10V
±25V
TO-220
150W (Tc)
-
STF15N60M2-EP
MOSFET N-CH 600V 11A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-55°C ~ 150°C (TJ)
590 pF @ 100 V
-
MOSFET (Metal Oxide)
-
378mOhm @ 5.5A, 10V
4V @ 250µA
17 nC @ 10 V
MDmesh™ M2-EP
600 V
11A (Tc)
10V
±25V
TO-220FP
25W (Tc)
-
STL25N60M2-EP
MOSFET N-CH 600V 16A PWRFLAT HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-55°C ~ 150°C (TJ)
1090 pF @ 100 V
-
MOSFET (Metal Oxide)
-
205mOhm @ 8A, 10V
4.75V @ 250µA
29 nC @ 10 V
MDmesh™ M2-EP
600 V
16A (Tc)
10V
±25V
PowerFlat™ (8x8) HV
125W (Tc)
-
STW42N60M2-EP
MOSFET N-CH 600V 34A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
150°C (TJ)
2370 pF @ 100 V
-
MOSFET (Metal Oxide)
-
87mOhm @ 17A, 10V
4.75V @ 250µA
55 nC @ 10 V
MDmesh™ M2-EP
600 V
34A (Tc)
10V
±25V
TO-247-3
250W (Tc)
-
STF42N60M2-EP
MOSFET N-CH 600V 34A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
150°C (TJ)
2370 pF @ 100 V
-
MOSFET (Metal Oxide)
-
87mOhm @ 17A, 10V
4.75V @ 250µA
55 nC @ 10 V
MDmesh™ M2-EP
600 V
34A (Tc)
10V
±25V
TO-220FP
40W (Tc)
-
STW27N60M2-EP
MOSFET N-CH 600V 20A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
1320 pF @ 100 V
-
MOSFET (Metal Oxide)
-
163mOhm @ 10A, 10V
4.75V @ 250µA
33 nC @ 10 V
MDmesh™ M2-EP
600 V
20A (Tc)
10V
±25V
TO-247-3
170W (Tc)
-
STF27N60M2-EP
MOSFET N-CH 600V 20A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3 Full Pack
-55°C ~ 150°C (TJ)
1320 pF @ 100 V
-
MOSFET (Metal Oxide)
-
163mOhm @ 10A, 10V
4.75V @ 250µA
33 nC @ 10 V
MDmesh™ M2-EP
600 V
20A (Tc)
10V
±25V
TO-220FP
30W (Tc)
-
STP15N60M2-EP
MOSFET N-CH 600V 11A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
-55°C ~ 150°C (TJ)
590 pF @ 100 V
-
MOSFET (Metal Oxide)
-
378mOhm @ 5.5A, 10V
4V @ 250µA
17 nC @ 10 V
MDmesh™ M2-EP
600 V
11A (Tc)
10V
±25V
TO-220
110W (Tc)
-
STB42N60M2-EP
MOSFET N-CH 600V 34A D2PAK
1+
$7.6056
5+
$7.1831
10+
$6.7606
Quantity
30,355 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
150°C (TJ)
2370 pF @ 100 V
-
MOSFET (Metal Oxide)
-
87mOhm @ 17A, 10V
4.75V @ 250µA
55 nC @ 10 V
MDmesh™ M2-EP
600 V
34A (Tc)
10V
±25V
TO-263 (D2Pak)
250W (Tc)
-
STL15N60M2-EP
MOSFET N-CH 600V 7A POWERFLAT HV
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
8-PowerVDFN
-55°C ~ 150°C (TJ)
590 pF @ 100 V
-
MOSFET (Metal Oxide)
-
418mOhm @ 4.5A, 10V
4.75V @ 250µA
17 nC @ 10 V
MDmesh™ M2-EP
600 V
7A (Tc)
10V
±25V
PowerFlat™ (5x6) HV
55W (Tc)
-
STP42N60M2-EP
MOSFET N-CH 600V 34A TO220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-220-3
150°C (TJ)
2370 pF @ 100 V
-
MOSFET (Metal Oxide)
-
87mOhm @ 17A, 10V
4.75V @ 250µA
55 nC @ 10 V
MDmesh™ M2-EP
600 V
34A (Tc)
10V
±25V
TO-220
250W (Tc)
-
STW25N60M2-EP
MOSFET N-CHANNEL 600V 18A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
1090 pF @ 100 V
-
MOSFET (Metal Oxide)
-
188mOhm @ 9A, 10V
4.75V @ 250µA
29 nC @ 10 V
MDmesh™ M2-EP
600 V
18A (Tc)
10V
±25V
TO-247-3
150W (Tc)
-
STD15N60M2-EP
MOSFET N-CH 600V 11A DPAK
1+
$6.3380
5+
$5.9859
10+
$5.6338
Quantity
87 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
TO-252-3, DPak (2 Leads + Tab), SC-63
-55°C ~ 150°C (TJ)
590 pF @ 100 V
-
MOSFET (Metal Oxide)
-
378mOhm @ 5.5A, 10V
4V @ 250µA
17 nC @ 10 V
MDmesh™ M2-EP
600 V
11A (Tc)
10V
±25V
DPAK
110W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.