MDmesh™ II Series, Single FETs, MOSFETs

Results:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining213
Applied Filters:
MDmesh™ II
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeOperating TemperatureSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STP11NM60N
MOSFET N-CH 600V 10A TO220AB
1+
$0.8873
5+
$0.8380
10+
$0.7887
Quantity
500 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
150°C (TJ)
TO-220
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
450mOhm @ 5A, 10V
31 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STFI15NM65N
MOSFET N-CH 650V 12A I2PAKFP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Full Pack, I²Pak
N-Channel
-55°C ~ 150°C (TJ)
TO-281 (I2PAKFP)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
380mOhm @ 6A, 10V
33.3 nC @ 10 V
±25V
983 pF @ 50 V
30W (Tc)
-
STU10NM60N
MOSFET N-CH 600V 10A IPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
-55°C ~ 150°C (TJ)
TO-251 (IPAK)
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
550mOhm @ 4A, 10V
19 nC @ 10 V
±25V
540 pF @ 50 V
70W (Tc)
-
STI14NM50N
MOSFET N CH 500V 12A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
-55°C ~ 150°C (TJ)
TO-262 (I2PAK)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 100µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
27 nC @ 10 V
±25V
816 pF @ 50 V
90W (Tc)
-
STL13NM60N
MOSFET N-CH 600V 10A PWRFLAT HV
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
385mOhm @ 5A, 10V
30 nC @ 10 V
±30V
790 pF @ 50 V
3W (Ta), 90W (Tc)
-
STFI24NM60N
MOSFET N-CH 600V 17A I2PAKFP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Full Pack, I²Pak
N-Channel
-55°C ~ 150°C (TJ)
TO-281 (I2PAKFP)
-
MOSFET (Metal Oxide)
-
17A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
190mOhm @ 8A, 10V
46 nC @ 10 V
±30V
1400 pF @ 50 V
30W (Tc)
-
STFU15NM65N
MOSFET N-CH 650V 12A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
-55°C ~ 150°C (TJ)
TO-220FP
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
380mOhm @ 6A, 10V
33.3 nC @ 10 V
±25V
983 pF @ 50 V
30W (Tc)
-
STFI20NM65N
MOSFET N-CH 650V 15A I2PAKFP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Full Pack, I²Pak
N-Channel
150°C (TJ)
TO-281 (I2PAKFP)
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
270mOhm @ 7.5A, 10V
44 nC @ 10 V
±25V
1280 pF @ 50 V
30W (Tc)
-
STI26NM60N
MOSFET N-CH 600V 20A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
150°C (TJ)
I2PAK
-
MOSFET (Metal Oxide)
-
20A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
165mOhm @ 10A, 10V
60 nC @ 10 V
±25V
1800 pF @ 50 V
140W (Tc)
-
STF32NM50N
MOSFET N CH 500V 22A TO-220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
150°C (TJ)
TO-220FP
-
MOSFET (Metal Oxide)
-
22A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
130mOhm @ 11A, 10V
62.5 nC @ 10 V
±25V
1973 pF @ 50 V
35W (Tc)
-
STU8NM50N
MOSFET N-CH 500V 5A IPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
150°C (TJ)
I-PAK
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
790mOhm @ 2.5A, 10V
14 nC @ 10 V
±25V
364 pF @ 50 V
45W (Tc)
-
STL24NM60N
MOSFET N-CH 600V 16A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
3.3A (Ta), 16A (Tc)
5V @ 250µA
MDmesh™ II
600 V
10V
215mOhm @ 8A, 10V
46 nC @ 10 V
±25V
1400 pF @ 50 V
3W (Ta), 125W (Tc)
-
STD7ANM60N
MOSFET N-CH 600V 5A DPAK
1+
$0.9634
5+
$0.9099
10+
$0.8563
Quantity
30,297 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
150°C (TJ)
DPAK
Automotive
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
900mOhm @ 2.5A, 10V
14 nC @ 10 V
±25V
363 pF @ 50 V
45W (Tc)
AEC-Q101
STD7NM64N
MOSFET N-CH 640V 5A DPAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
150°C (TJ)
DPAK
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
640 V
10V
1.05Ohm @ 2.5A, 10V
14 nC @ 10 V
±25V
363 pF @ 50 V
60W (Tc)
-
STD8NM50N
MOSFET N-CH 500V 5A DPAK
1+
$1.9014
5+
$1.7958
10+
$1.6901
Quantity
31,999 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
150°C (TJ)
DPAK
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
790mOhm @ 2.5A, 10V
14 nC @ 10 V
±25V
364 pF @ 50 V
45W (Tc)
-
STL23NM50N
MOSFET N-CH 500V 2.8A PWRFLT 8X8
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
2.8A (Ta), 14A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
210mOhm @ 7A, 10V
45 nC @ 10 V
±25V
1330 pF @ 50 V
3W (Ta), 125W (Tc)
-
STF9NM60N
MOSFET N-CH 600V 6.5A TO220FP
1+
$0.4563
5+
$0.4310
10+
$0.4056
Quantity
34,946 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
150°C (TJ)
TO-220FP
-
MOSFET (Metal Oxide)
-
6.5A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
745mOhm @ 3.25A, 10V
17.4 nC @ 10 V
±25V
452 pF @ 50 V
25W (Tc)
-
STL18NM60N
MOSFET N-CH 600V 6A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
150°C (TJ)
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
2.1A (Ta), 12A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
310mOhm @ 6A, 10V
35 nC @ 10 V
±30V
1000 pF @ 50 V
3W (Ta), 110W (Tc)
-
STP34NM60N
MOSFET N-CH 600V 29A TO220-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
150°C (TJ)
TO-220
-
MOSFET (Metal Oxide)
-
29A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
105mOhm @ 14.5A, 10V
80 nC @ 10 V
±25V
2722 pF @ 100 V
250W (Tc)
-
STD14NM50NAG
MOSFET N-CH 500V 12A DPAK
1+
$2.5352
5+
$2.3944
10+
$2.2535
Quantity
2,054 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
150°C (TJ)
DPAK
Automotive
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
27 nC @ 10 V
±25V
816 pF @ 50 V
90W
AEC-Q101

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.