MDmesh™ II Series, Single FETs, MOSFETs

Results:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining213
Applied Filters:
MDmesh™ II
Select
ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperaturePackage / CaseFET TypeSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STP22NM60N
MOSFET N-CH 600V 16A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3
N-Channel
TO-220
-
MOSFET (Metal Oxide)
-
16A (Tc)
MDmesh™ II
600 V
10V
220mOhm @ 8A, 10V
4V @ 100µA
44 nC @ 10 V
±30V
1300 pF @ 50 V
125W (Tc)
-
STF13NM60N
MOSFET N-CH 600V 11A TO220FP
1+
¥0.6794
5+
¥0.6417
10+
¥0.6039
Quantity
31,845 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
N-Channel
TO-220FP
-
MOSFET (Metal Oxide)
-
11A (Tc)
MDmesh™ II
600 V
10V
360mOhm @ 5.5A, 10V
4V @ 250µA
30 nC @ 10 V
±25V
790 pF @ 50 V
25W (Tc)
-
STB24NM60N
MOSFET N-CH 600V 17A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
TO-263 (D2Pak)
-
MOSFET (Metal Oxide)
-
17A (Tc)
MDmesh™ II
600 V
10V
190mOhm @ 8A, 10V
4V @ 250µA
46 nC @ 10 V
±30V
1400 pF @ 50 V
125W (Tc)
-
STB19NM65N
MOSFET N-CH 650V 15.5A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
-
MOSFET (Metal Oxide)
-
15.5A (Tc)
MDmesh™ II
650 V
10V
270mOhm @ 7.75A, 10V
4V @ 250µA
55 nC @ 10 V
±25V
1900 pF @ 50 V
150W (Tc)
-
STP32NM50N
MOSFET N CH 500V 22A TO-220
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-220-3
N-Channel
TO-220
-
MOSFET (Metal Oxide)
-
22A (Tc)
MDmesh™ II
500 V
10V
130mOhm @ 11A, 10V
4V @ 250µA
62.5 nC @ 10 V
±25V
1973 pF @ 50 V
190W (Tc)
-
STI24NM60N
MOSFET N CH 600V 17A I2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
-
MOSFET (Metal Oxide)
-
17A (Tc)
MDmesh™ II
600 V
10V
190mOhm @ 8A, 10V
4V @ 250µA
46 nC @ 10 V
±30V
1400 pF @ 50 V
125W (Tc)
-
STL26NM60N
MOSFET N-CH 600V 19A POWERFLAT
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
8-PowerVDFN
N-Channel
PowerFlat™ (8x8) HV
-
MOSFET (Metal Oxide)
-
2.7A (Ta), 19A (Tc)
MDmesh™ II
600 V
10V
185mOhm @ 10A, 10V
5V @ 250µA
60 nC @ 10 V
±30V
1800 pF @ 50 V
125mW (Ta), 3W (Tc)
-
STW24NM60N
MOSFET N-CH 600V 17A TO247
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
17A (Tc)
MDmesh™ II
600 V
10V
190mOhm @ 8A, 10V
4V @ 250µA
46 nC @ 10 V
±30V
1400 pF @ 50 V
125W (Tc)
-
STW19NM50N
MOSFET N-CH 500V 14A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
14A (Tc)
MDmesh™ II
500 V
10V
250mOhm @ 7A, 10V
4V @ 250µA
34 nC @ 10 V
±25V
1000 pF @ 50 V
110W (Tc)
-
STW30NM50N
MOSFET N-CH 500V 27A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
27A (Tc)
MDmesh™ II
500 V
10V
115mOhm @ 13.5A, 10V
4V @ 250µA
94 nC @ 10 V
±25V
2740 pF @ 50 V
190W (Tc)
-
STW18NM60N
MOSFET N-CH 600V 13A TO247-3
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
TO-247-3
N-Channel
TO-247-3
-
MOSFET (Metal Oxide)
-
13A (Tc)
MDmesh™ II
600 V
10V
285mOhm @ 6.5A, 10V
4V @ 250µA
35 nC @ 10 V
±25V
1000 pF @ 50 V
110W (Tc)
-
STF26NM60N
MOSFET N-CH 600V 20A TO220FP
1+
¥1.2423
5+
¥1.1732
10+
¥1.1042
Quantity
20,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-220-3 Full Pack
N-Channel
TO-220FP
-
MOSFET (Metal Oxide)
-
20A (Tc)
MDmesh™ II
600 V
10V
165mOhm @ 10A, 10V
4V @ 250µA
60 nC @ 10 V
±30V
1800 pF @ 50 V
35W (Tc)
-
STF25NM60N
MOSFET N-CH 600V 21A TO220FP
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-220-3 Full Pack
N-Channel
TO-220FP
-
MOSFET (Metal Oxide)
-
21A (Tc)
MDmesh™ II
600 V
10V
160mOhm @ 10.5A, 10V
4V @ 250µA
84 nC @ 10 V
±25V
2400 pF @ 50 V
40W (Tc)
-
STP25NM60N
MOSFET N-CH 600V 21A TO220AB
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-220-3
N-Channel
TO-220
-
MOSFET (Metal Oxide)
-
21A (Tc)
MDmesh™ II
600 V
10V
160mOhm @ 10.5A, 10V
4V @ 250µA
84 nC @ 10 V
±25V
2400 pF @ 50 V
160W (Tc)
-
STB25NM60N
MOSFET N-CH 600V 21A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
-
MOSFET (Metal Oxide)
-
21A (Tc)
MDmesh™ II
600 V
10V
160mOhm @ 10.5A, 10V
4V @ 250µA
84 nC @ 10 V
±25V
2400 pF @ 50 V
160W (Tc)
-
STD11NM60N-1
MOSFET N-CH 600V 10A I-PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
I-PAK
-
MOSFET (Metal Oxide)
-
10A (Tc)
MDmesh™ II
600 V
10V
450mOhm @ 5A, 10V
4V @ 250µA
31 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STB25NM60N-1
MOSFET N-CH 600V 21A I2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
N-Channel
I2PAK
-
MOSFET (Metal Oxide)
-
21A (Tc)
MDmesh™ II
600 V
10V
160mOhm @ 10.5A, 10V
4V @ 250µA
84 nC @ 10 V
±25V
2400 pF @ 50 V
160W (Tc)
-
STD11NM60N
MOSFET N-CH 600V 10A DPAK
1+
¥0.2535
5+
¥0.2394
10+
¥0.2254
Quantity
590 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
-
MOSFET (Metal Oxide)
-
10A (Tc)
MDmesh™ II
600 V
10V
450mOhm @ 5A, 10V
4V @ 250µA
31 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STB12NM50N
MOSFET N-CH 500V 11A D2PAK
Contact us
Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
-
MOSFET (Metal Oxide)
-
11A (Tc)
MDmesh™ II
500 V
10V
380mOhm @ 5.5A, 10V
4V @ 250µA
30 nC @ 10 V
±25V
940 pF @ 50 V
100W (Tc)
-
STD12NM50N
MOSFET N-CH 500V 11A DPAK
1+
¥5.0704
5+
¥4.7887
10+
¥4.5070
Quantity
2,120 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
150°C (TJ)
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
-
MOSFET (Metal Oxide)
-
11A (Tc)
MDmesh™ II
500 V
10V
380mOhm @ 5.5A, 10V
4V @ 250µA
30 nC @ 10 V
±25V
940 pF @ 50 V
100W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.