MDmesh™ II Series, Single FETs, MOSFETs

Results:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining213
Applied Filters:
MDmesh™ II
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypePackage / CaseFET TypeSupplier Device PackageOperating TemperatureGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STP30NM30N
MOSFET N-CH 300V 30A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220
-65°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
30A (Tc)
4V @ 250µA
MDmesh™ II
300 V
10V
90mOhm @ 15A, 10V
75 nC @ 10 V
±20V
2500 pF @ 50 V
160W (Tc)
-
STP8NM60N
MOSFET N-CH 600V 7A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
7A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
650mOhm @ 3.5A, 10V
19 nC @ 10 V
±25V
560 pF @ 50 V
70W (Tc)
-
STU10NM65N
MOSFET N-CH 650V 9A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-251-3 Short Leads, IPak, TO-251AA
N-Channel
I-PAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
480mOhm @ 4.5A, 10V
25 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STW13NM50N
MOSFET N-CH 500V 12A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
30 nC @ 10 V
±25V
960 pF @ 50 V
100W (Tc)
-
STW16NM50N
MOSFET N-CH 500V 15A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
TO-247-3
150°C (TJ)
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
260mOhm @ 7.5A, 10V
38 nC @ 10 V
±25V
1200 pF @ 50 V
125W (Tc)
-
STW24NM65N
MOSFET N-CH 650V 19A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
TO-247-3
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
190mOhm @ 9.5A, 10V
70 nC @ 10 V
±25V
2500 pF @ 50 V
160W (Tc)
-
STW19NM65N
MOSFET N-CH 650V 15.5A TO247-3
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-247-3
N-Channel
TO-247-3
150°C (TJ)
-
MOSFET (Metal Oxide)
-
15.5A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
270mOhm @ 7.75A, 10V
55 nC @ 10 V
±25V
1900 pF @ 50 V
150W (Tc)
-
STB24NM65N
MOSFET N-CH 650V 19A D2PAK
1+
$1.2676
5+
$1.1972
10+
$1.1268
Quantity
6,570 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
N-Channel
D2PAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
190mOhm @ 9.5A, 10V
70 nC @ 10 V
±25V
2500 pF @ 50 V
160W (Tc)
-
STD10NM65N
MOSFET N-CH 650V 9A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
480mOhm @ 4.5A, 10V
25 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STD7NM50N
MOSFET N-CH 500V 5A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
780mOhm @ 2.5A, 10V
12 nC @ 10 V
±25V
400 pF @ 50 V
45W (Tc)
-
STL6NM60N
MOSFET N-CH 600V 5.75A POWERFLAT
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
PowerFLAT™ (5x5)
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
5.75A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
920mOhm @ 2.3A, 10V
13 nC @ 10 V
±25V
420 pF @ 50 V
70W (Tc)
-
STD11NM65N
MOSFET N CH 650V 11A DPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
11A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
455mOhm @ 5.5A, 10V
29 nC @ 10 V
±25V
800 pF @ 50 V
110W (Tc)
-
STD7NM60N
MOSFET N-CH 600V 5A DPAK
1+
$0.6338
5+
$0.5986
10+
$0.5634
Quantity
2,916 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
TO-252-3, DPak (2 Leads + Tab), SC-63
N-Channel
DPAK
150°C (TJ)
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
900mOhm @ 2.5A, 10V
14 nC @ 10 V
±25V
363 pF @ 50 V
45W (Tc)
-
STL3NM60N
MOSFET N-CH 600V 0.65A POWERFLAT
1+
$3.8028
5+
$3.5915
10+
$3.3803
Quantity
3,000 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Surface Mount
8-PowerVDFN
N-Channel
PowerFlat™ (3.3x3.3)
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
650mA (Ta), 2.2A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
1.8Ohm @ 1A, 10V
9.5 nC @ 10 V
±25V
188 pF @ 50 V
2W (Ta), 22W (Tc)
-
STF28NM50N
MOSFET N-CH 500V 21A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
TO-220FP
150°C (TJ)
-
MOSFET (Metal Oxide)
-
21A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
158mOhm @ 10.5A, 10V
50 nC @ 10 V
±25V
1735 pF @ 25 V
35W (Tc)
-
STP24NM60N
MOSFET N-CH 600V 17A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
17A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
190mOhm @ 8A, 10V
46 nC @ 10 V
±30V
1400 pF @ 50 V
125W (Tc)
-
STF19NM50N
MOSFET N-CH 500V 14A TO220FP
1+
$1.0141
5+
$0.9577
10+
$0.9014
Quantity
10,441 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
TO-220FP
150°C (TJ)
-
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
250mOhm @ 7A, 10V
34 nC @ 10 V
±25V
1000 pF @ 50 V
30W (Tc)
-
STF15NM65N
MOSFET N-CH 650V 12A TO220FP
1+
$1.2777
5+
$1.2068
10+
$1.1358
Quantity
2,969 Available
Can ship immediately
Ships from: HK
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
TO-220FP
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
380mOhm @ 6A, 10V
33.3 nC @ 10 V
±25V
983 pF @ 50 V
30W (Tc)
-
STF14NM50N
MOSFET N-CH 500V 12A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3 Full Pack
N-Channel
TO-220FP
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 100µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
27 nC @ 10 V
±25V
816 pF @ 50 V
25W (Tc)
-
STP14NM50N
MOSFET N-CH 500V 12A TO220
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
TO-220-3
N-Channel
TO-220
-55°C ~ 150°C (TJ)
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 100µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
27 nC @ 10 V
±25V
816 pF @ 50 V
90W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.