MDmesh™ II Series, Single FETs, MOSFETs

Results:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining213
Applied Filters:
MDmesh™ II
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeOperating TemperatureFET TypePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureCurrent - Continuous Drain (Id) @ 25°CVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB12NM60N-1
MOSFET N-CH 600V 10A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
410mOhm @ 5A, 10V
30.5 nC @ 10 V
±25V
960 pF @ 50 V
90W (Tc)
-
STD7NM50N-1
MOSFET N-CH 500V 5A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
-
MOSFET (Metal Oxide)
-
5A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
780mOhm @ 2.5A, 10V
12 nC @ 10 V
±25V
400 pF @ 50 V
45W (Tc)
-
STD8NM60N-1
MOSFET N-CH 600V 7A IPAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-251-3 Short Leads, IPak, TO-251AA
I-PAK
-
MOSFET (Metal Oxide)
-
7A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
650mOhm @ 3.5A, 10V
19 nC @ 10 V
±25V
560 pF @ 50 V
70W (Tc)
-
STF10NM65N
MOSFET N-CH 650V 9A TO220FP
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
480mOhm @ 4.5A, 10V
25 nC @ 10 V
±25V
850 pF @ 50 V
25W (Tc)
-
STF12NM60N
MOSFET N-CH 600V 10A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
410mOhm @ 5A, 10V
30.5 nC @ 10 V
±25V
960 pF @ 50 V
25W (Tc)
-
STF13NM50N
MOSFET N-CH 500V 12A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
30 nC @ 10 V
±25V
960 pF @ 50 V
25W (Tc)
-
STF16NM50N
MOSFET N-CH 500V 15A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
260mOhm @ 7.5A, 10V
38 nC @ 10 V
±25V
1200 pF @ 50 V
30W (Tc)
-
STF15NM60N
MOSFET N-CH 600V 14A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
299mOhm @ 7A, 10V
37 nC @ 10 V
±25V
1250 pF @ 50 V
30W (Tc)
-
STF23NM60N
MOSFET N-CH 600V 19A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
180mOhm @ 9.5A, 10V
60 nC @ 10 V
±25V
2050 pF @ 50 V
35W (Tc)
-
STF8NM60N
MOSFET N-CH 600V 7A TO220FP
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
7A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
650mOhm @ 3.5A, 10V
19 nC @ 10 V
±25V
560 pF @ 50 V
25W (Tc)
-
STI16NM50N
MOSFET N-CH 500V 15A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
260mOhm @ 7.5A, 10V
38 nC @ 10 V
±25V
1200 pF @ 50 V
125W (Tc)
-
STI15NM60N
MOSFET N-CH 600V 14A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
299mOhm @ 7A, 10V
37 nC @ 10 V
±25V
1250 pF @ 50 V
125W (Tc)
-
STP10NM65N
MOSFET N-CH 650V 9A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
9A (Tc)
4V @ 250µA
MDmesh™ II
650 V
10V
480mOhm @ 4.5A, 10V
25 nC @ 10 V
±25V
850 pF @ 50 V
90W (Tc)
-
STI23NM60N
MOSFET N-CH 600V 19A I2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
19A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
180mOhm @ 9.5A, 10V
60 nC @ 10 V
±25V
2050 pF @ 50 V
150W (Tc)
-
STP13NM50N
MOSFET N-CH 500V 12A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
12A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
320mOhm @ 6A, 10V
30 nC @ 10 V
±25V
960 pF @ 50 V
100W (Tc)
-
STP12NM60N
MOSFET N-CH 600V 10A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
10A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
410mOhm @ 5A, 10V
30.5 nC @ 10 V
±25V
960 pF @ 50 V
90W (Tc)
-
STP15NM60N
MOSFET N-CH 600V 14A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
14A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
299mOhm @ 7A, 10V
37 nC @ 10 V
±25V
1250 pF @ 50 V
125W (Tc)
-
STP16NM50N
MOSFET N-CH 500V 15A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
15A (Tc)
4V @ 250µA
MDmesh™ II
500 V
10V
260mOhm @ 7.5A, 10V
38 nC @ 10 V
±25V
1200 pF @ 50 V
125W (Tc)
-
STP30NM30N
MOSFET N-CH 300V 30A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-65°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
30A (Tc)
4V @ 250µA
MDmesh™ II
300 V
10V
90mOhm @ 15A, 10V
75 nC @ 10 V
±20V
2500 pF @ 50 V
160W (Tc)
-
STP8NM60N
MOSFET N-CH 600V 7A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
-55°C ~ 150°C (TJ)
N-Channel
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
7A (Tc)
4V @ 250µA
MDmesh™ II
600 V
10V
650mOhm @ 3.5A, 10V
19 nC @ 10 V
±25V
560 pF @ 50 V
70W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.