MDmesh™ II Series, Single FETs, MOSFETs

Results:
213
Manufacturer
Series
Rds On (Max) @ Id, Vgs
Input Capacitance (Ciss) (Max) @ Vds
Current - Continuous Drain (Id) @ 25°C
Gate Charge (Qg) (Max) @ Vgs
Power Dissipation (Max)
Supplier Device Package
Package / Case
Drain to Source Voltage (Vdss)
Vgs(th) (Max) @ Id
Vgs (Max)
Operating Temperature
Grade
Mounting Type
Qualification
FET Feature
FET Type
Technology
Drive Voltage (Max Rds On, Min Rds On)
Results remaining213
Applied Filters:
MDmesh™ II
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ImageProduct DetailPriceAvailabilityECAD ModelMounting TypeFET TypeOperating TemperaturePackage / CaseSupplier Device PackageGradeTechnologyFET FeatureVgs(th) (Max) @ IdSeriesDrain to Source Voltage (Vdss)Current - Continuous Drain (Id) @ 25°CDrive Voltage (Max Rds On, Min Rds On)Rds On (Max) @ Id, VgsGate Charge (Qg) (Max) @ VgsVgs (Max)Input Capacitance (Ciss) (Max) @ VdsPower Dissipation (Max)Qualification
STB25NM50N-1
MOSFET N-CH 500V 22A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
500 V
22A (Tc)
10V
140mOhm @ 11A, 10V
84 nC @ 10 V
±25V
2565 pF @ 25 V
160W (Tc)
-
STB21NM50N-1
MOSFET N-CH 500V 18A I2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-262-3 Long Leads, I²Pak, TO-262AA
I2PAK
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
500 V
18A (Tc)
10V
190mOhm @ 9A, 10V
65 nC @ 10 V
±25V
1950 pF @ 25 V
140W (Tc)
-
STB14NM65N
MOSFET N-CH 650V 12A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
650 V
12A (Tc)
10V
380mOhm @ 6A, 10V
45 nC @ 10 V
±25V
1300 pF @ 50 V
125W (Tc)
-
STB12NM60N
MOSFET N-CH 600V 10A D2PAK
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Quantity
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PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
-55°C ~ 150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
600 V
10A (Tc)
10V
410mOhm @ 5A, 10V
30.5 nC @ 10 V
±25V
960 pF @ 50 V
90W (Tc)
-
STW25NM60N
MOSFET N-CH 600V 21A TO247-3
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-247-3
TO-247-3
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
600 V
21A (Tc)
10V
160mOhm @ 10.5A, 10V
84 nC @ 10 V
±25V
2400 pF @ 50 V
160W (Tc)
-
STP7NM50N
MOSFET N-CH 500V 5A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
500 V
5A (Tc)
10V
780mOhm @ 2.5A, 10V
12 nC @ 10 V
±25V
400 pF @ 50 V
45W (Tc)
-
STP6NM60N
MOSFET N-CH 600V 4.6A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
600 V
4.6A (Tc)
10V
920mOhm @ 2.3A, 10V
13 nC @ 10 V
±25V
420 pF @ 50 V
45W (Tc)
-
STP24NM65N
MOSFET N-CH 650V 19A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
650 V
19A (Tc)
10V
190mOhm @ 9.5A, 10V
70 nC @ 10 V
±25V
2500 pF @ 50 V
160W (Tc)
-
STP23NM60N
MOSFET N-CH 600V 19A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
600 V
19A (Tc)
10V
180mOhm @ 9.5A, 10V
60 nC @ 10 V
±25V
2050 pF @ 50 V
150W (Tc)
-
STP19NM65N
MOSFET N-CH 650V 15.5A TO220AB
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
650 V
15.5A (Tc)
10V
270mOhm @ 7.75A, 10V
55 nC @ 10 V
±25V
1900 pF @ 50 V
150W (Tc)
-
STP14NM65N
MOSFET N-CH 650V 12A TO220AB
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
150°C (TJ)
TO-220-3
TO-220
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
650 V
12A (Tc)
10V
380mOhm @ 6A, 10V
45 nC @ 10 V
±25V
1300 pF @ 50 V
125W (Tc)
-
STF7NM50N
MOSFET N-CH 500V 5A TO220FP
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Quantity
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PCB Symbol, Footprint & 3D Model
Through Hole
N-Channel
-55°C ~ 150°C (TJ)
TO-220-3 Full Pack
TO-220FP
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
500 V
5A (Tc)
10V
780mOhm @ 2.5A, 10V
12 nC @ 10 V
±25V
400 pF @ 50 V
20W (Tc)
-
STB21NM50N
MOSFET N-CH 500V 18A D2PAK
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Quantity
Contact us
PCB Symbol, Footprint & 3D Model
Surface Mount
N-Channel
150°C (TJ)
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
D2PAK
-
MOSFET (Metal Oxide)
-
4V @ 250µA
MDmesh™ II
500 V
18A (Tc)
10V
190mOhm @ 9A, 10V
65 nC @ 10 V
±25V
1950 pF @ 25 V
140W (Tc)
-

About  Single FETs, MOSFETs

Discrete Field Effect Transistors (FETs) are highly versatile electronic components that are employed in a range of applications, including power conversion, motor control, solid-state lighting, and many others. One of the key advantages of FETs is their ability to be switched on and off at high frequencies while carrying substantial amounts of current. This makes them ideal for use in circuits that require precise control over their output signals. FETs are particularly useful in applications that require voltage ratings of a few hundred volts or less. Above this range, other device types such as Insulated Gate Bipolar Transistors (IGBTs) become more competitive. FETs are often preferred over IGBTs for lower voltage applications because they offer faster switching speeds, better efficiency, and simpler drive circuits. One of the key benefits of using discrete FETs is that they can be configured in a variety of ways to suit specific application requirements. For example, they can be used in parallel to increase the current-carrying capacity of the circuit, or in series to increase the voltage rating. They can also be used in conjunction with other passive components such as diodes and capacitors to form more complex circuits. In addition to their versatility and efficiency, FETs are also known for their durability and reliability. They have no moving parts, which makes them less susceptible to wear and tear. Moreover, they can operate at high temperatures without degradation in performance, making them ideal for use in harsh environments. In summary, Discrete Field Effect Transistors (FETs) are widely used in a range of applications owing to their high switching frequency, high current-carrying capacity, and excellent efficiency. They are particularly suitable for low-voltage applications where they outperform other device types such as IGBTs. With their versatility, durability, and reliability, FETs will continue to play a vital role in the development of modern electronic systems.